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P-Channel MOSFETs(0)

P-Channel MOSFETs are indispensable components in power management, primarily utilized for high-side switching applications. Their unique advantage lies in the simplified gate drive requirement: since the source is typically connected to the positive supply rail, the device can be turned on by simply pulling the gate voltage below the source, eliminating the need for complex charge pumps or bootstrap circuits required by N-channel high-side drivers.

At IcMass, we offer a robust selection of P-Channel devices optimized for low-voltage load switching and reverse polarity protection. Our portfolio includes high-density trench MOSFETs in compact footprints like SOT-23, SOP-8, and DFN packages. These components are frequently paired with our N-channel offerings to form complementary pairs, ideal for H-bridge motor drives and class-D amplifiers. By focusing on low threshold voltage ($V_{GS(th)}$) and optimized $R_{DS(on)}$, our P-Channel MOSFETs ensure efficient power delivery in battery-operated and portable electronics.

制造商	Package/Case	Series	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	供应商设备封装	尺寸 / 尺寸	供应商设备封装	控制特性	认证机构	标准编号	Approval Agency	Current Rating (Amps)	param_30

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type
NCE2305A NCE2305A – NCE P-Channel Enhancement Mode MOSFET (SOT-23)Quick Answer The NCE2305A is an enhanced version of the popular NCE2305 P-Channel MOSFET from NCE. NCEPower	50,000	-	RFQ	-		SOT-23	Production	Industrial grade	Trench	P	-12	-4.1	-0.7			29	45	40	60	±12	740	7.8	1.7
NCE2333Y NCE2333Y — -12 V, -6 A P-Channel MOSFET (SOT-23-3L)The NCE2333Y is a -12 V, -6 A P-channel MOSFET in SOT-23-3L from Wuxi NCE Power, datasheet v2.0. On-resistance is 30 mΩ maximum at a -4.5 V gate and 45 mΩ at -2.5 V.It sits at the top of … NCEPower	50,000	-	RFQ	-		SOT-23	Production	Industrial grade	Trench	P	-12	-6	-0.7			19	30	26	45	±12	1100	12	1.8
NCE12P09S The NCE12P09S is a Wuxi NCE Power P-channel enhancement-mode MOSFET in SOP-8 — −12 V drain-source, −9 A continuous, 18 mΩ maximum on-resistance at 4.5 V gate drive, datasheet V4.0. We stock it. NCEPower	50,000	-	RFQ	-		SOP-8	Production	Industrial grade	Trench	P	-12	-9	-0.7			11.5	18	14	22	±12	2700	35	2.5
NCE2305 NCE2305 – NCE -20V P-Channel MOSFET (SOT-23)Quick Answer The NCE2305 is a high-performance P-Channel enhancement mode power MOSFET from NCE. It features low on-resistance, fast switching NCEPower	50,000	-	RFQ	-		SOT-23	Production	Industrial grade	Trench	P	-20	-4.1	-0.7			34	45	44	60	±12	1120	13.1	1.7
NCE20P05Y The NCE20P05Y is a −20 V, −5 A P-channel MOSFET from Wuxi NCE Power in SOT-23-3L , with 20 mΩ typical on-resistance at a −4.5 V gate and 15 nC of gate charge (datasheet V2.0). The sheet lists motor drive and load switch as the jobs. NCEPower	50,000	-	RFQ	-		SOT-23	Production	Industrial grade	Trench	P	-20	-5	-0.7			22	28	32	40	±12	620	15	1.6
NCE20P07N The NCE20P07N is a −20 V, −7 A P-channel MOSFET in SOT-23-6L from Wuxi NCE Power, datasheet v1.0. On-resistance is 35 mΩ maximum at a −4.5 V gate and 45 mΩ at −2.5 V. NCEPower	50,000	-	RFQ	-		SOT-23	Production	Industrial grade	Trench	P	-20	-7	-0.55			31	40	40	53	±10	1134	13	1.9
NCE20P10J The NCE20P10J is a Wuxi NCE Power P-channel MOSFET rated -20 V and -10 A in a 2 × 2 mm DFN package. On-resistance is 12 mΩ typical and 18 mΩ maximum at a -4.5 V gate, and the whole part is 0.8 mm tall (datasheet v3.0). NCEPower	50,000	-	RFQ	-		DFN2*2	Production	Industrial grade	Trench	P	-20	-10	-0.85			19	25	26	36	±12	2947.6	34	3.5
NCE20P45Q The NCE20P45Q is a Wuxi NCE Power −20 V / −45 A P-channel MOSFET in PDFN3.3X3.3-8L , aimed at load switches and battery protection. All figures come from the NCE datasheet, V4.0. Its gate rating is ±10 V . NCEPower	50,000	-	RFQ	-		DFN3*3	Production	Industrial grade	Trench	P	-20	-45	-0.6			5.8	7	7.2	9	±10	7177	63.5	80
NCE20P70G The NCE20P70G is a −20 V, −70 A P-channel MOSFET from Wuxi NCE Power in PDFN5X6-8L , with 2.3 mΩ typical on-resistance at a −4.5 V gate. It's aimed at load switches and battery protection, and the threshold is low enough to look logic-level at first NCEPower	50,000	-	RFQ	-		DFN5*6	Production	Industrial grade	Trench	P	-20	-70	-0.6			2.3	4.5	2.8	5.5	±10	4950	100	130
NCE2303 NCE2303 — 30V/2.0A P-Channel MOSFET (SOT-23)The NCE2303 is a 30V, 2.0A P-channel enhancement-mode power MOSFET from Wuxi NCE Power, in a SOT-23 package, datasheet v1.0. On-resistance is published at two gate drives: 130mΩ max at -10V and 180m&O… NCEPower	50,000	-	RFQ	-		SOT-23	Production	Industrial grade	Trench	P	-30	-2	-1.6	72	130	110	180			±20	226	8.5	1
NCE3407 NCE3407 — −30 V / −4.6 A P-Channel MOSFET, SOT-23The NCE3407 is a Wuxi NCE Power P-channel enhancement mode MOSFET in the surface-mount SOT-23 package — −30 V drain-source, −4.6 A continuous, 95 mΩ maximum on-resis… NCEPower	50,000	-	RFQ	-		SOT-23	Production	Industrial grade	Trench	P	-30	-4.1	-1.5	48	60	60	95			±20	650	13	1.4
NCE3401 : P-Channel 30V -4.2A Power MOSFET SOT-23 30V -4.2A, SOT-23 package. Marking code A19T. Perfect AO3401 equivalent for battery protection & high-side switching. Original stock, competitive price, and PDF datasheet download. NCEPower	50,000	-	RFQ	-	SOT-23	SOT-23	Production	Industrial grade	Trench	P	-30	-4.2	-1	48	55	56	75	72	130	±12	880	8.5	1.2
NCE3407AY The NCE3407AY is a Wuxi NCE Power P-channel MOSFET rated -30 V and -4.3 A in a SOT-23-3L package. On-resistance is 40 mΩ typical and 52 mΩ maximum at a -10 V gate and -4 A, with a 150 °C junction limit (datasheet v4.0). NCEPower	50,000	-	RFQ	-		SOT-23	Production	Industrial grade	Trench	P	-30	-4.3	-1.5	40	52	46	65	68	12	±20	700	14	1.5
NCE3401AY NCE3401AY — −30 V / −4.4 A P-Channel MOSFET, SOT-23-3LThe NCE3401AY is a Wuxi NCE Power P-channel enhancement mode MOSFET in the surface-mount SOT-23-3L package — −30 V drain-source, −4.4 A continuous, 52 mΩ maximu… NCEPower	50,000	-	RFQ	-		SOT-23	Production	Industrial grade	Trench	P	-30	-4.4	-1	41	52	48	65	64	120	±12	950	9.5	1.3
NCE9435 NCE9435 — -30V/-5.1A P-Channel Power MOSFET (SOP-8)The NCE9435 is a -30V, -5.1A P-Channel enhancement-mode power MOSFET in SOP-8 from Wuxi NCE Power. It's the classic high-side load switch: logic-level gate drive works down to -4.5V, and the trench c… NCEPower	50,000	-	RFQ	-		SOP-8	Production	Industrial grade	Trench	P	-30	-5.1	-1.6	43	55	62	90			±20	980	11	2.5
NCE9435A NCE9435A — -30 V, -5.3 A P-Channel MOSFET (SOP-8)The NCE9435A is the A revision of the NCE9435: a -30 V, -5.3 A P-channel MOSFET in SOP-8 from Wuxi NCE Power, datasheet v2.1. Its 10 V on-resistance is 49 mΩ maximum, down from 55 mΩ on the… NCEPower	50,000	-	RFQ	-		SOP-8	Production	Industrial grade	Trench	P	-30	-5.3	-1.6	37	49	60	85			±20	1040	12	2.6
NCE4435 NCE4435 — -30 V, -9.1 A P-Channel MOSFET (SOP-8L)The NCE4435 is a -30 V P-channel MOSFET in SOP-8L from Wuxi NCE Power, datasheet V2.2. It is the next step up from the NCE9435A: 20 mΩ maximum at a -10 V gate, against 49 mΩ on the 9435A.Th… NCEPower	50,000	-	RFQ	-		SOP-8	Production	Industrial grade	Trench	P	-30	-9.1	-1.5	16	20	21	35			±20	1600	30	3.1
NCE4435X The NCE4435X is a −30 V, −10 A P-channel MOSFET from Wuxi NCE Power in SOP-8 , with 14 mΩ typical on-resistance at a −10 V gate. The sheet prints two gate-voltage rows: 19 mΩ maximum at −10 V and 30 mΩ maximum at −4.5 V. NCEPower	50,000	-	RFQ	-		SOP-8	Production	Industrial grade	Trench	P	-30	-10	-1.6	14	19	19	30			±20	1400	32	3
NCE30P12S NCE30P12S — -30V/-12A P-Channel Power MOSFET (SOP-8)The NCE30P12S is a -30V, -12A P-Channel enhancement-mode power MOSFET in SOP-8 from Wuxi NCE Power — the high-current step above the 9435 family. Trench cell, logic-level gate drive down to -4… NCEPower	50,000	-	RFQ	-		SOP-8	Production	Industrial grade	Trench	P	-30	-12	-1.5	11.5	15	18	25			±20	1750	24	3
NCE30P20Q The NCE30P20Q is a −30 V, −20 A P-channel MOSFET from Wuxi NCE Power in DFN3.3X3.3-8L , aimed at load switches and power management. On-resistance is 11.5 mΩ typical at a −10 V gate. NCEPower	50,000	-	RFQ	-		DFN3*3	Production	Industrial grade	Trench	P	-30	-20	-1.6	11.5	15	18	25			±20	2130	45.6	35

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