P-Channel MOSFETs(0)

P-Channel MOSFETs are indispensable components in power management, primarily utilized for high-side switching applications. Their unique advantage lies in the simplified gate drive requirement: since the source is typically connected to the positive supply rail, the device can be turned on by simply pulling the gate voltage below the source, eliminating the need for complex charge pumps or bootstrap circuits required by N-channel high-side drivers.

At IcMass, we offer a robust selection of P-Channel devices optimized for low-voltage load switching and reverse polarity protection. Our portfolio includes high-density trench MOSFETs in compact footprints like SOT-23, SOP-8, and DFN packages. These components are frequently paired with our N-channel offerings to form complementary pairs, ideal for H-bridge motor drives and class-D amplifiers. By focusing on low threshold voltage ($V_{GS(th)}$) and optimized $R_{DS(on)}$, our P-Channel MOSFETs ensure efficient power delivery in battery-operated and portable electronics.

制造商 Package/Case Series Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package 供应商设备封装 尺寸 / 尺寸 供应商设备封装 控制特性 认证机构 标准编号 Approval Agency Current Rating (Amps) param_30
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Photo Mfr. Part # Availability Price Quantity Datasheet Package/Case Series Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package 供应商设备封装 供应商设备封装 控制特性 认证机构 标准编号 Current Rating (Amps) param_30
NCE2305A

NCE2305A

NCE2305A – NCE P-Channel Enhancement Mode MOSFET (SOT-23)Quick Answer The NCE2305A is an enhanced version of the popular NCE2305 P-Channel MOSFET from NCE.

NCEPower

50,000
RFQ

-

SOT-23 Production Industrial grade Trench P -12 -4.1 -0.7 29 45 40 60 ±12 740 7.8 1.7
NCE2305

NCE2305

NCE2305 – NCE -20V P-Channel MOSFET (SOT-23)Quick Answer The NCE2305 is a high-performance P-Channel enhancement mode power MOSFET from NCE. It features low on-resistance, fast switching

NCEPower

50,000
RFQ

-

SOT-23 Production Industrial grade Trench P -20 -4.1 -0.7 34 45 44 60 ±12 1120 13.1 1.7
NCE3401 : P-Channel 30V -4.2A Power MOSFET SOT-23

NCE3401 : P-Channel 30V -4.2A Power MOSFET SOT-23

30V -4.2A, SOT-23 package. Marking code A19T. Perfect AO3401 equivalent for battery protection & high-side switching. Original stock, competitive price, and PDF datasheet download.

NCEPower

50,000
RFQ

-

SOT-23 SOT-23 Production Industrial grade Trench P -30 -4.2 -1 48 55 56 75 72 130 ±12 880 8.5 1.2
NCE9435

NCE9435

NCE9435 — -30V/-5.1A P-Channel Power MOSFET (SOP-8)The NCE9435 is a -30V, -5.1A P-Channel enhancement-mode power MOSFET in SOP-8 from Wuxi NCE Power. It's the classic high-side load switch: logic-level gate drive works down to -4.5V, and the trench c…

NCEPower

50,000
RFQ

-

SOP-8 Production Industrial grade Trench P -30 -5.1 -1.6 43 55 62 90 ±20 980 11 2.5
NCE30P12S

NCE30P12S

NCE30P12S — -30V/-12A P-Channel Power MOSFET (SOP-8)The NCE30P12S is a -30V, -12A P-Channel enhancement-mode power MOSFET in SOP-8 from Wuxi NCE Power — the high-current step above the 9435 family. Trench cell, logic-level gate drive down to -4…

NCEPower

50,000
RFQ

-

SOP-8 Production Industrial grade Trench P -30 -12 -1.5 11.5 15 18 25 ±20 1750 24 3
NCE30P25S

NCE30P25S

NCE30P25S — -30V/-25A P-Channel Power MOSFET (SOP-8)The NCE30P25S is a -30V, -25A P-Channel enhancement-mode power MOSFET in SOP-8 from Wuxi NCE Power — the top step of the 30P high-current family. Trench cell, RDS(on) of 9mΩ max @ -10V (…

NCEPower

50,000
RFQ

-

SOP-8 Production Industrial grade Trench P -30 -25 -1.5 6.4 9 8.3 14 ±20 7506 98.9 3.5
NCE30P30K

NCE30P30K

NCE30P30K — 30V/30A P-Channel Power MOSFET (TO-252-2L)The NCE30P30K is a -30V/-30A P-Channel trench MOSFET in TO-252-2L (DPAK) — 18mΩ max at 10V (typ 13mΩ), 31.2nC gate charge, and a spec sheet that answers the questions the sibling…

NCEPower

50,000
RFQ

-

TO-252 Production Industrial grade Trench P -30 -30 -1.5 13 18 22 30 ±20 1363 31 35
NCE30P30G

NCE30P30G

NCE30P30G — 30V/30A P-Channel Power MOSFET (DFN5×6-8L)The NCE30P30G is a -30V/-30A P-Channel trench MOSFET in DFN5×6-8L — 10mΩ max at 10V (typ 7.4mΩ), 15mΩ max at 4.5V, 81.3nC gate charge, from Wuxi NCE Power, data…

NCEPower

50,000
RFQ

-

DFN5*6 Production Industrial grade Trench P -30 -30 -1.6 7.4 12 10.6 15 ±20 4222 81 45
NCE30P50G

NCE30P50G

NCE30P50G — 30V/50A P-Channel Power MOSFET (DFN 5x6 EP)The NCE30P50G is the top of the NCE 30P line — a -30V/-50A P-Channel trench MOSFET in DFN 5x6, with 7mΩ max at 10V (typ 4.4mΩ), -200A pulsed current, and a body diode rated for …

NCEPower

50,000
RFQ

-

DFN5*6 Production Industrial grade Trench P -30 -50 -1.5 5.5 7 7 11 ±20 7016 93 35
NCE2309 — P-Channel 60V/1.6A Enhancement Mode Power MOSFET (SOT-23)

NCE2309 — P-Channel 60V/1.6A Enhancement Mode Power MOSFET (SOT-23)

NCE2309 – NCE Power P-Channel Enhancement Mode Power MOSFETQuick Answer The NCE2309 is a P-Channel Enhancement Mode Power MOSFET from Wuxi NCE Power Semiconductor.

NCEPower

50,000
RFQ

-

SOT-23 Production Industrial grade Trench P -60 -1.6 -2 140 160 160 200 ±20 444.2 11 1.5
NCE30P15S

NCE30P15S

NCE30P15S — -30V/-15A P-Channel Power MOSFET (SOP-8)The NCE30P15S is a -30V, -15A P-Channel enhancement-mode power MOSFET in SOP-8 from Wuxi NCE Power — the middle step of the 30P high-current family. Trench cell, RDS(on) of 12mΩ max @ -1…

NCEPower

50,000
RFQ

-

SOP-8 Production Industrial grade Trench P -30 -15 -1.5 8.5 10 11.5 15 ±20 2900 48 3.1
NCE4606

NCE4606

NCE4606 — 30V N+P Complementary Dual MOSFET (SOP-8)The NCE4606 puts a 30V N-channel (6.5A, 30mΩ max at 10V) and a 30V P-channel (−7A, 33mΩ max at −10V) in one SOP-8, from Wuxi NCE Power, datasheet v1.0. The sheet names the job…

NCEPower

50,000
RFQ

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SOP-8 Production Industrial grade Trench N+P -30 -7 -1.7 28 32 49 70 ±20 729.4 16.6 2
NCE4953

NCE4953

NCE4953 — 30V Dual P-Channel MOSFET (SOP-8)The NCE4953 is a dual P-channel 30V MOSFET in SOP-8 — two independent −30V / −5.1A channels, 55mΩ max at −10V and 90mΩ max at −4.5V, from Wuxi NCE Power, datasheet v…

NCEPower

50,000
RFQ

-

SOP-8 Production Industrial grade Trench双芯 P+P -30 -5.1 -1.6 43 55 62 90 ±20 520 11 2.5
NCE4963

NCE4963

NCE4963 — 20V Dual P-Channel MOSFET (SOP-8)The NCE4963 is the logic-level end of this family — a dual P-channel 20V MOSFET in SOP-8, −7A per channel, 27mΩ max at −4.5V and 39mΩ max at −2.5V, from Wuxi NCE Power, da…

NCEPower

50,000
RFQ

-

SOP-8 Production Industrial grade Trench双芯 P+P -20 -7 -0.7 19 25 23 32 ±12 1210 10 3
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