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P-Channel MOSFETs(0)

P-Channel MOSFETs are indispensable components in power management, primarily utilized for high-side switching applications. Their unique advantage lies in the simplified gate drive requirement: since the source is typically connected to the positive supply rail, the device can be turned on by simply pulling the gate voltage below the source, eliminating the need for complex charge pumps or bootstrap circuits required by N-channel high-side drivers.

At IcMass, we offer a robust selection of P-Channel devices optimized for low-voltage load switching and reverse polarity protection. Our portfolio includes high-density trench MOSFETs in compact footprints like SOT-23, SOP-8, and DFN packages. These components are frequently paired with our N-channel offerings to form complementary pairs, ideal for H-bridge motor drives and class-D amplifiers. By focusing on low threshold voltage ($V_{GS(th)}$) and optimized $R_{DS(on)}$, our P-Channel MOSFETs ensure efficient power delivery in battery-operated and portable electronics.

制造商	Package/Case	Series	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	供应商设备封装	尺寸 / 尺寸	供应商设备封装	控制特性	认证机构	标准编号	Approval Agency	Current Rating (Amps)	param_30

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type
NCE2305A NCE2305A – NCE P-Channel Enhancement Mode MOSFET (SOT-23)Quick Answer The NCE2305A is an enhanced version of the popular NCE2305 P-Channel MOSFET from NCE. It features low on-resistance, logic level drive, and high current capability in a compact SOT-23 p… NCEPower	50,000	-	RFQ	-		SOT-23	Production	Industrial grade	Trench	P	-12	-4.1	-0.7			29	45	40	60	±12	740	7.8	1.7
NCE2305 NCE2305 – NCE -20V P-Channel MOSFET (SOT-23)Quick Answer The NCE2305 is a high-performance P-Channel enhancement mode power MOSFET from NCE. It features low on-resistance, fast switching NCEPower	50,000	-	RFQ	-		SOT-23	Production	Industrial grade	Trench	P	-20	-4.1	-0.7			34	45	44	60	±12	1120	13.1	1.7
NCE3401 : P-Channel 30V -4.2A Power MOSFET SOT-23 30V -4.2A, SOT-23 package. Marking code A19T. Perfect AO3401 equivalent for battery protection & high-side switching. Original stock, competitive price, and PDF datasheet download. NCEPower	50,000	-	RFQ	-	SOT-23	SOT-23	Production	Industrial grade	Trench	P	-30	-4.2	-1	48	55	56	75	72	130	±12	880	8.5	1.2
NCE2309 — P-Channel 60V/1.6A Enhancement Mode Power MOSFET (SOT-23) NCE2309 – NCE Power P-Channel Enhancement Mode Power MOSFETQuick Answer The NCE2309 is a P-Channel Enhancement Mode Power MOSFET from Wuxi NCE Power Semiconductor. NCEPower	50,000	-	RFQ	-		SOT-23	Production	Industrial grade	Trench	P	-60	-1.6	-2	140	160	160	200			±20	444.2	11	1.5