NCE30P30K — 30V/30A P-Channel Power MOSFET (TO-252-2L)

What Are the Technical Specifications of NCE30P30K?

Key numbers that matter: per the NCE30P30K datasheet (v1.0), the 10V row is guaranteed at a -20A test current — not at the -30A sticker.

That is normal datasheet practice, but it matters here: at -20A the die still has headroom; at -30A the 18mΩ row is extrapolation, not measurement.

Then the rows that separate the K from the sibling G: I_D -21.2A at 100°C, E_AS 169mJ with full conditions, t_rr 24ns, and a 175°C junction ceiling. The G publishes none of those.

And the 4.5V row tells the small-die story plainly: 30mΩ max at 4.5V — double the G's 15mΩ. 4.5V drive works; lowest-loss 4.5V drive is a different die.

When Should You Use (and NOT Use) the NCE30P30K?

✅ Use NCE30P30K when:

• Your gate rail is 10V and the driver is modest. 31.2nC is 2.6× lighter than the G — a plain pull-up-plus-NPN handles it at real PWM rates, and a weak 10V source stops being a problem.
• Unclamped inductive duty with a budget. E_AS 169mJ with published conditions and 100% UIS testing is a number to design against — the G has no such row.
• Boards already built around the TO-252 tab family. Same footprint as the N-ch TO-252 line: one land pattern, one assembly line, a tab you can inspect and hand-rework.
• Designs that want a real 100°C current. I_D -21.2A at 100°C is published — no extrapolation needed for the hot-case number.
• Full-bridge high sides and LCD DC-DC input switches. The datasheet's own application list; the light gate keeps the level-shift simple.

❌ Don't use NCE30P30K when:

• Conduction loss rules and load is 20A+ continuous. 20A² × 18mΩ = 7.2W, and 30A² × 18mΩ = 16.2W. The G (10mΩ) or an N-ch plus driver is the honest answer there.
• You want the best 4.5V-drive loss. 30mΩ max at 4.5V is double the G's row — if 4.5V is your only rail and watts matter, the DFN sibling wins.
• 24V rails without a gate clamp. Same ±20V limit as the whole family: on-state V_GS on a 24V rail exceeds it. 18V zener gate-source, or stay at or below ~18V.
• Pulse duty near -70A I_DM repeatedly. -70A pulsed is the ceiling; repetitive near-limit pulsing needs junction-temperature math, not optimism.
• Hand-assembly is not a feature for you. If the board is reflow-only and void control is already solved, the DFN pad route may serve better thermally (R_θJC 2.5 vs 1.56°C/W).

What Are the Alternatives to NCE30P30K?

The 30A decision in one line: the K is the 30A die for light gates, published avalanche, and TO-252 assembly; the G is the 30A die for conduction loss.

Here's the thing to check before buying: which question your board actually asks.

If the load rarely passes 15A and the driver is weak, the K's 18mΩ is invisible and its 31.2nC is a gift.

If the load sits at 25A and watts are the problem, no TO-252 P-ch fixes that — the G's pad or an N-ch stage does.

What Are the Typical Applications of NCE30P30K?

High-side switches in full-bridge converters. A listed application in the datasheet. The light 31.2nC gate keeps the high-side level-shift simple, and the tab handles what the bridge throws at it.

DC-DC input and bias switches for LCD systems. The datasheet's second listed application. Low gate charge and a TO-252 body suit the modest drive rails of display power boards.

2S-4S battery tools and 12-16V load switching. The family's home turf in our distribution experience — the K appears where the 10V gate rail already exists and the load is a real 10-20A, not a sticker.

Prototype and hand-assembly builds. A tab you can solder with an iron and inspect beats a DFN pad when the run is small — the same die philosophy, minus the stencil discipline.

Why Buy NCE30P30K from ICMASS?

Every lot batch-tested at the 10V/-20A drive point. We test against the 18mΩ max at the datasheet's own test current — a fake smaller die reads high there, and we catch it before it ships.

Cross-reference support across the whole 30P line. G, K, 50G, or the SOP-8 trio? Send us load current, drive rail, and board copper — we'll tell you which die philosophy your board asks for, including when the answer is an N-ch.

Tab-landing and layout verification on request. We confirm land patterns against the datasheet package drawing and check your lot's marking and threshold band before volume orders.

Same-day dispatch, 5-10 days worldwide. Orders before 15:00 CST ship same day via DHL or FedEx. For volume, we source directly from the NCE factory line.

Frequently Asked Questions About NCE30P30K

Q1: Which 30A part do I buy — the K or the G?

A: K for light gates and published numbers; G for conduction loss. The K runs 18mΩ max with 31.2nC and publishes E_AS 169mJ, I_D -21.2A at 100°C, and t_rr 24ns. The G runs 10mΩ with 81.3nC and leaves those rows blank. Below ~15A continuous with a modest driver, the K's milliohms are invisible and its gate is a gift.

Q2: Can it really carry -30A continuously?

A: Only with a tab on real copper, and it costs 16.2W to prove. 30A² × 18mΩ = 16.2W against a 60W case envelope at R_θJC 2.5°C/W. The published 100°C number — -21.2A — is the honest hot-case figure; below that with a good pour, you are in designable territory. Measure with a thermocouple.

Q3: Why is the 10V row tested at -20A, not -30A?

A: Datasheet convention — the test current is where the die has headroom. At -30A the die is near its limit and R_DS(on) would read higher; -20A gives a repeatable number. It means the 18mΩ max is a measurement at -20A — at -30A expect more, and design accordingly.

Q4: How do I use the E_AS 169mJ number?

A: Compare your unclamped event energy against it. The test is Tj 25°C, V_DD -15V, L = 0.5mH, I_AS -26A. Estimate your event as ½LI² at the fault current, derate for junction temperature, and remember it is single-pulse — repetitive avalanche needs a clamp or snubber.

Q5: Is the body diode good enough for freewheeling?

A: Rated and characterized — unusual for this family. The K publishes I_S -20A, V_SD -1.2V at -15A, t_rr 24ns and Q_rr 16nC at di/dt -100A/μs. For a high-side switch with a modest freewheel duty, that is a real design number; sustained diode current still needs the -20A ceiling respected.

Q6: Does 4.5V drive still make sense on this die?

A: It works, at a loss tax. R_DS(on) at 4.5V is 30mΩ max — double the G's 15mΩ. At 10A that is 3W instead of 1.5W. If 4.5V is the only rail and watts matter, the G is the better die; if the load is modest, the K's lighter gate may matter more.

Q7: How does TO-252 assembly compare with the DFN pad?

A: The tab is the DFN pad's forgiving cousin. Same copper-and-vias recipe underneath, but the tab is inspectable, reworkable with an iron, and shares a land pattern with the N-ch TO-252 line. The DFN pad (G) has the better R_θJC (1.56 vs 2.5°C/W) when void control is done right.

Q8: What PWM rates can 31.2nC support?

A: Real PWM with a push-pull stage, tens of kilohertz comfortably. 31.2nC at 10V is roughly a 3nF effective gate — a 10Ω gate resistor and a push-pull driver switch it far faster than any pull-up RC. Above ~50kHz, use a driver IC and watch the Miller plateau.

Q9: How do I verify a genuine NCE30P30K?

A: Test at the datasheet's own conditions. Measure R_DS(on) at 10V/-20A — a genuine part reads within 18mΩ max — and check V_GS(th) in the -1.2 to -2.5V band. A remarked 25S die (tested at -15A) or a relabeled smaller die fails the -20A milliohm check.