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The NCE4606 puts a 30V N-channel (6.5A, 30mΩ max at 10V) and a 30V P-channel (−7A, 33mΩ max at −10V) in one SOP-8, from Wuxi NCE Power, datasheet v1.0. The sheet names the job itself: a level-shifted high-side switch.
From what we see across Shenzhen lots (2025–2026), the complementary SOP-8 reorder usually turns up after a gate-driver IC has died — engineers replace the driver with this pair and two resistors.
Here's the number most people miss: both channels publish only a 10V RDS(on) row. The N-channel threshold is as low as 1V, but there is no 4.5V characterization anywhere in the sheet.
And the pin map is not what you'd guess: the P-channel sits on the center pins (3, 4, 5, 6) and the N-channel on the outside (1, 2, 7, 8). Channel number and pin number don't line up.
One more thing. VGS is ±20V on both channels — so on a 24V rail, a resistor pull-up on the high-side P-channel gate puts VGS at −24V, past the limit, and it fails slowly rather than instantly.
| Parameter | Value |
|---|---|
| Type | Complementary N-Channel + P-Channel Enhancement Mode Power MOSFET (Trench) |
| Package | SOP-8, device marking “4606” |
| N-Channel Drain-Source Voltage (VDS) | 30V |
| P-Channel Drain-Source Voltage (VDS) | −30V |
| Gate-Source Voltage (VGS) | ±20V max, both channels |
| N-Channel Continuous Drain Current (ID) | 6.5A @ TA = 25°C / 5.4A @ 70°C |
| P-Channel Continuous Drain Current (ID) | −7A @ TA = 25°C / −5.8A @ 70°C |
| Pulsed Drain Current (IDM) | 30A / −30A |
| N-Channel RDS(on) @ 10V | 30mΩ max (typ 20mΩ, ID = 6A) |
| P-Channel RDS(on) @ −10V | 33mΩ max (typ 28mΩ, ID = −6.5A) |
| N-Channel Gate Threshold (VGS(th)) | 1.0V min / 1.6V typ / 3.0V max |
| P-Channel Gate Threshold (VGS(th)) | −1.5V min / −1.9V typ / −2.5V max |
| Forward Transconductance (gfs) | N 15S / P 10S min |
| Input Capacitance (Ciss) | N 255pF / P 520pF (VDS = 15V) |
| Output / Reverse Transfer Capacitance | N 45pF / 35pF — P 100pF / 65pF |
| Total Gate Charge (Qg) @ 10V | N 13nC / P 9.2nC |
| Switching Times (td(on)/tr/td(off)/tf) | N 4.5 / 2.5 / 14.5 / 3.5 ns (RGEN = 3Ω) — P 7.5 / 5.5 / 19 / 7 ns (RGEN = 6Ω) |
| Body Diode Forward Voltage (VSD) | 1.2V max (N) / −1.2V max (P) |
| Max Power Dissipation (PD) | 2.0W per channel @ TA = 25°C |
| Thermal Resistance (RθJA) | 62.5°C/W per channel — FR4 board, t ≤ 10 sec |
| Operating Junction & Storage Temperature | −55°C to 150°C |
| Reel / Tape | Ø330mm, 12mm tape, 2500 units |
Two things are absent from that table, and both matter. There is no EAS (avalanche) row and no body-diode trr row — so unclamped inductive edges and commutation loss are unmeasured quantities on this part. And there is no 4.5V RDS(on) row, even though the thresholds are low.
Now the asymmetry that shapes every design here — the P-channel is the weaker channel, not the stronger one:
At the headline currents and worst-case resistance, the P-channel burns 1.62W of a 2.0W budget — 81%. And that 2.0W is a ten-second number, not a continuous one.
The only thermal path the datasheet publishes is 62.5°C/W measured on FR4 at t ≤ 10 sec, with no steady-state figure anywhere in the sheet. Add a second channel conducting at the same time and the arithmetic stops being comfortable.
✅ Use NCE4606 when:
❌ Don't use NCE4606 when:
| Model | Type | Key Difference | Best For |
|---|---|---|---|
| NCE9926 | Dual N-Channel, SOP-8 | 20V/6A per channel with a 2.5V-drive spec and independent D1/D2 — two N-channels, no complementary pair | Low-voltage dual low-side switching from logic levels |
| NCE9435 | Single P-Channel, SOP-8 | −30V/−5.1A at 4.5V drive — one P-channel in the same footprint, characterized at a lower gate voltage | A single high-side switch where you don't need the N-channel |
| NCE4953 | Dual P-Channel, SOP-8 | Two P-channels instead of a complementary pair, with operation characterized from 4.5V gate drive — the two-high-side option | Dual high-side load switching from one logic supply |
| NCE4963 | Dual P-Channel, SOP-8 | 20V class with gate operation characterized down to 2.5V — the battery-direct sibling | Single-cell rails driven straight from low-voltage logic |
Here's the thing that costs people money: they buy the complementary part when a dual P-channel would have done. The NCE4606 earns its place only when you actually need both polarities — a high-side P-channel plus an N-channel doing something else. Otherwise you're paying for a die you never switch.
What does your schematic actually need? If it needs one high-side switch, the NCE9435 is the same size and easier to drive. If it needs two high-side switches, the NCE4953 is the honest answer. If it needs a level-shifted pair, then this is the part.
Read it against the sheet and it is genuinely counter-intuitive: pin 1 is S2, the N-channel source, and pin 3 is S1, the P-channel source. The P-channel occupies the middle pins; the N-channel wraps around the outside. Solder it in by channel number and you will swap them.
The two channels are also independent — D1 on pins 5–6 and D2 on pins 7–8 are separate terminals, with no internal drain tie. Wire the complementary pair yourself.
Both headline currents push past the ten-second budget well inside normal room-temperature operation — the P-channel at −7A crosses it around 49°C ambient, the N-channel at 6.5A around 71°C.
This is a derivation from the datasheet's own RθJA row, not a curve NCE publishes. The sheet's real derating curves are single-pulse and normalized; they sit on pages 6 and 7 if you want them.
Level-shifted high-side switches. This is the application NCE names on page one: a P-channel doing the high-side pull-up and an N-channel handling the low side or the level translation, so a low-voltage logic signal controls a higher rail.
Battery charge and discharge switching. The complementary pair blocks and conducts in both directions, which is what a charge/discharge path needs. Keep the current modest — the 2.0W budget is a ten-second rating, not a continuous one.
Bidirectional current stages and inverter legs. The sheet lists current control and inverter circuits explicitly. With 30V ratings on both channels and 30A pulsed capability, the pair covers small motor and solenoid legs where a full bridge would be overkill.
Repair and retrofit of complementary SOP-8 positions. When a driver IC or a discontinued complementary pair has to be replaced, the NCE4606 covers the common footprint — and the marking “4606” is the only one to accept.
We sample-test NCE4606 lots at the published condition: 30mΩ max on the N-channel and 33mΩ max on the P-channel, both at 10V. That matters more here than usual, because this part has an active clone market.
The clone to watch is VBsemi's NCE4606-VB, a pin-compatible complementary pair marked silk-screen VBA5325. It publishes 2.5V and 4.5V RDS(on) rows — which the NCE original does not have at all. If the sheet you are reading shows low-voltage RDS(on) lines, it is not the NCE part.
We stock the whole dual-MOSFET shelf together: the complementary NCE4606, the dual-P NCE4953 and NCE4963, and the dual-N NCE9926, each with its official PDF on hand. Picking between them is a schematic question, and we will tell you when a single NCE9435 is the cheaper honest answer.
Orders ship same day from Shenzhen, with volume pricing that keeps a genuine 30V complementary SOP-8 competitive against clone stock wearing a similar code.
A: Not with a simple resistor pull-up. With the P-channel source at the rail, pulling the gate low for turn-on puts VGS at −24V — past the ±20V maximum. The gate oxide does not fail at once; leakage climbs, the device can drift toward always-on, and the failure arrives minutes later. Clamp gate-to-source with a Zener, or keep the rail at 15–18V.
A: Pins 1, 2, 7 and 8 are the N-channel; pins 3, 4, 5 and 6 are the P-channel. Pin 1 is S2, pin 2 is G2, pin 3 is S1, pin 4 is G1; pins 5–6 are D1 and pins 7–8 are D2. The P-channel sits on the center pins, which is the opposite of what most engineers assume.
A: No — they are independent. D1 (pins 5–6) and D2 (pins 7–8) are separate terminals with no internal tie, so the complementary pair is wired by you on the board. That is what makes the level-shifted high-side configuration possible, and it also means there is no hidden common node to surprise you.
A: Only if that pin delivers a real 10V, which almost none do. Both RDS(on) rows are at 10V. The thresholds are low — 1.6V typical on the N-channel, −1.9V on the P-channel — but a threshold is not a drive spec. At 5V the channel is partly enhanced with uncharacterized resistance. Use a 10V driver rail.
A: Far less than the headline numbers suggest. At the printed −7A the P-channel dissipates 1.62W through 33mΩ — 81% of the 2.0W budget. And that 2.0W is qualified at t ≤ 10 sec on FR4; the sheet publishes no steady-state thermal resistance at all. Design for a fraction of an amp per channel unless you have measured your own board.
A: The supply short-circuits through the sum of both RDS(on) values. Vishay's level-shift application notes describe exactly this crossover-current failure in complementary pairs, and note the smaller die — usually the P-channel — runs away thermally first, often within a few hundred milliseconds. Sequence the gates so they cannot overlap.
A: Fast, at the conditions the sheet states. The N-channel shows 4.5ns turn-on delay and 2.5ns rise with a 3Ω gate resistor; the P-channel 7.5ns and 5.5ns with 6Ω. Gate charge is 13nC and 9.2nC. Those figures assume the stated RGEN — a weak driver, not the die, is what slows the edge.
A: Check the marking and then check the sheet. Genuine parts are marked “4606” and their only RDS(on) rows are at 10V. VBsemi's NCE4606-VB is marked VBA5325 and publishes 2.5V and 4.5V RDS(on) lines instead. A clone that looks better on paper at low voltage is a different die.
| Image |
|
| Part Number | NCE4606 |
| Manufacturer | NCEPower |
| Package/Case | |
| Series | |
| Packaging | SOP-8 |
| Product Status | Production |
| FET Type | Industrial grade |
| Technology | Trench |
| Drain to Source Voltage (Vdss) | N+P |
| Current - Continuous Drain (Id) @ 25°C | -30 |
| Drive Voltage (Max Rds On, Min Rds On) | -7 |
| Rds On (Max) @ Id, Vgs | -1.7 |
| Vgs(th) (Max) @ Id | 28 |
| Gate Charge (Qg) (Max) @ Vgs | 32 |
| Vgs (Max) | 49 |
| Input Capacitance (Ciss) (Max) @ Vds | 70 |
| FET Feature | |
| Power Dissipation (Max) | |
| Operating Temperature | ±20 |
| Grade | 729.4 |
| Qualification | 16.6 |
| Mounting Type | 2 |
| Supplier Device Package | |
| 供应商设备封装 | |
| 供应商设备封装 | |
| 控制特性 | |
| 认证机构 | |
| 标准编号 | |
| Current Rating (Amps) | |
| param_30 |
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