NCE30P30G vs NCE30P30K vs NCE30P50G: Side-by-Side Comparison

The table says it in four rows: test current, 4.5V row, R_θJC, and what gets published.

What's the real difference at your load current? That is where the comparison starts — none of the three rows is measured at its own sticker.

The K publishes the most rows per milliohm; the G publishes the best thermal row; the 50G publishes the biggest pulses and the biggest diode — with the tightest case envelope.

Key Differences

Difference 1: Test conditions — read the fine print before the milliohms

The 50G's 7mΩ is measured at -10A; the G's 10mΩ at -15A; the K's 18mΩ at -20A. None is measured at its sticker current.

At the same current the gaps narrow — and the honest comparison is at your load current, not at the datasheet's test points.

Difference 2: The 4.5V row divides the family

The G guarantees 15mΩ at 4.5V; the K guarantees 30mΩ at 4.5V; the 50G has no 4.5V row at all.

If 4.5-5V is your only drive, the 50G is out — and the G wins on loss. None of the three guarantees anything from 3.3V logic.

Difference 3: Thermal envelopes are counterintuitive

The biggest die (50G) publishes the tightest envelope: 35W behind R_θJC 3.6°C/W. The 30A DFN (G) publishes 80W at 1.56; the TO-252 (K) 60W at 2.5.

Package attribution differs between datasheets, but the practical reading is the same: the 50G is built for surge duty, not for continuous 50A.

Difference 4: What each datasheet publishes

The K publishes the fullest set: E_AS 169mJ, I_D -21.2A at 100°C, t_rr 24ns, T_J 175°C.

The G publishes the best R_θJC and a 4.5V row, but no E_AS, no 100°C row, no diode recovery. The 50G publishes the biggest numbers — E_AS 300mJ, I_S -50A, I_DM -200A — and claims high ESD without a rating row.

When to Choose Each Part

Choose the NCE30P50G when your load is a pulse, and your rail is 10V

Motor stalls, hot-plug inrush, solenoid banks — I_DM -200A and E_AS 300mJ are the budget for events, not for averages. Its -50A body diode makes reverse-protection designs defensible.

Don't pick it for 4.5V drive (no row) or for continuous 40A+ on a board (17.5W against a 35W envelope).

Choose the NCE30P30G when conduction loss rules and 4.5-10V drive is available

The DFN5×6 pad with 2oz copper gives the family's best R_θJC (1.56°C/W) and the 4.5V row is real (15mΩ max).

Don't pick it when you need a published avalanche budget, a 100°C current row, or a driver that cannot move 81.3nC.

Choose the NCE30P30K when the driver is weak or the line is TO-252

31.2nC switches from a modest 10V source; the tab is inspectable and hand-solderable; E_AS 169mJ, I_D -21.2A at 100°C and t_rr 24ns are all published.

Don't pick it when the load sits at 20A+ continuous — 7.2W worst-case at 20A is the highest loss of the trio.

Where the SOP-8 line fits — and when to leave the family

Below ~10-12A continuous, the SOP-8 steps (30P12S/15S/25S) carry the same jobs with the same drive logic — at lower cost per die.

Above ~30A continuous, no P-ch in this family is the right answer. An N-ch plus a high-side driver halves the conduction loss and stops being optional.

Frequently Asked Questions

Q1: Which one do I pick for a 12V battery tool with a 10V gate rail and 20A loads?

A: The NCE30P30G, if the pad has copper — the 50G if the load stalls hard. At 20A the G loses 4.0W worst-case against the K's 7.2W, and it guarantees a 4.5V row as margin. If stall currents pass ~40A regularly, the 50G's -200A pulse budget is the insurance that pays for itself.

Q2: My system only has 4.5V or 5V drive. Which of the three works?

A: The G or the K — the 50G is out. The G guarantees 15mΩ max at 4.5V; the K 30mΩ. The 50G has no 4.5V row at all, so its 7mΩ is a 10V-only promise. And none of the three guarantees conduction from 3.3V — level-shift or measure.

Q3: Do the G and 50G share the same land pattern?

A: Both datasheets describe a DFN5X6-8L package, but confirm the pin map from each figure. The G's datasheet (v1.0) and the 50G's (v2.0) both use the DFN5×6 leadless body. Same package family does not guarantee identical pin assignment across dies — verify against the respective figures before layout.

Q4: Why does the 50A part have a worse R_θJC than the 30A part?

A: Datasheet attribution, and a design statement. The 50G lists R_θJC 3.6°C/W with P_D 35W at T_J 150°C; the G lists 1.56°C/W with 80W. Both are self-consistent. The practical reading is that the 50G is specced for surge duty, where junction temperature is set by pulse energy and duty, not by continuous watts.

Q5: I need PWM at 20-40kHz. Which gate can my driver handle?

A: All three, with a real driver — the K is the easiest. Q_g is 31.2nC (K), 81.3nC (G), 84nC (50G). A push-pull stage or driver IC moves all three at tens of kilohertz. The difference shows in weak drives: the K switches where the DFN dies simmer. A pull-up-only gate is wrong for all three above a few kilohertz.

Q6: Is the 50G the drop-in upgrade when a G board runs out of current?

A: Only if the layout is a 50A layout and the drive is 10V. Same leadless package family, but the pin map must be confirmed and the pad-to-pour copper must be sized for the higher current. The drive rail also decides it — on a 4.5V board the 50G is not an upgrade, it is a non-starter.

Q7: Which part survives a hard motor stall on a 4S pack?

A: The 50G — that is its job. Stall current on a stalled brushed motor can reach many times the running current. The 50G's I_DM -200A and E_AS 300mJ are the pulse budget for that event; the G (-160A, no E_AS row) and the K (-70A, 169mJ) are smaller answers to the same question.

Q8: Which one do I buy for reverse-battery protection?

A: The 50G if the main path is heavy; the K if the load is modest. Both publish body-diode ratings (I_S -50A at -0.85V typ for the 50G, -20A for the K); the G publishes no diode row at all. For back-to-back P-ch blocking without an external Schottky, the published diode row is the spec you design against.

Q9: All three at -30V — can I use them on a 24V rail?

A: Yes, with a gate clamp — the ±20V V_GS is the limit, not the -30V V_DS. Turning on pulls the gate to ground, so on-state V_GS on a 24V rail is about -24V against the ±20V max. Add an 18V zener between gate and source, or keep the rail at or below ~18V. At 24V the drain margin (24V vs -30V) also wants a TVS for switching spikes.