The NCE30P50G is a -30V/-50A P-Channel trench MOSFET in DFN 5x6 from Wuxi NCE Power — 7mΩ max at 10V, -200A pulse, EAS 300mJ, body diode rated -50A. It sits in the niche the now-obsolete AOS AON7405 used to own: big P-ch high-side and battery switching at 50A class.
The honest replacement picture: same-rail rivals come in different footprints, the family DFN shares the land-pattern family but not automatically the pin map, and above ~30A continuous the right replacement is an N-ch — which is why the 50G sells on surge duty, not on continuous watts.
What does a legacy 50A P-ch swap actually involve? Three checks in order: footprint, copper, drive rail.
Here's the one-line guide: footprint-flexible and 10V-driven → 30P30G or another DFN5x6 P-ch; legacy AON7405 sockets → verify pinout, expect a layout change; true 50A continuous → an N-ch (NCE30H10K class).
| Parameter | NCE30P50G | AON7405 (legacy) | NCE30P30G (family) | NCE30H10K (N-ch) |
|---|---|---|---|---|
| Polarity | P-Channel | P-Channel | P-Channel | N-Channel |
| Package | DFN 5x6 EP | DFN 3.3×3.3-8L | DFN5×6-8L | TO-252 |
| VDS | -30V | -30V | -30V | 30V |
| ID @ TC 25°C | -50A | -50A | -30A | 100A |
| RDS(on) max @ 10V | 7mΩ (tested -10A) | 6.2mΩ | 10mΩ (tested -15A) | 5.5mΩ |
| RDS(on) at lower gate | no row (10V-only) | 8.9mΩ max @ -6V | 15mΩ max @ 4.5V | not cited here |
| IDM pulsed | -200A | not cited here | -160A | not cited here |
| Qg | 84nC | 51nC | 81.3nC | not cited here |
| EAS | 300mJ published | not cited here | not published | not cited here |
| Body diode IS | -50A published | not cited here | not published | not cited here |
| Status | current, in stock | obsolete | current, in stock | current, in stock |
Read the comparison in two lines: the 50G matches the departed AON7405's class on paper — same -30V/-50A, 7 vs 6.2mΩ — but in a DFN 5x6 body, not the 3.3×3.3 the 7405 used.
So the 7405-to-50G swap is a board change, not a drop-in. And when the load is truly continuous at 50A, none of the P-ch parts is the answer — the N-ch row is.
RDS(on) max at 10V across the replacement candidates — milliohms at their own test conditions:
The N-ch row is not a coincidence — at 50A class, the lowest milliohm per dollar lives on the N side. The 50G wins where polarity, drive simplicity, or surge duty matters more than the last milliohm.
Use it when the legacy part's job was surge and switching: motor stalls, battery inrush, solenoid banks, with a real 10V gate rail.
The published rows that make it defensible: EAS 300mJ with conditions, IDM -200A, and a body diode rated -50A for reverse-duty designs.
Use the family DFN when the board can take the same 5x6 land pattern and the load sits below 30A with 4.5V drive in the system.
The G guarantees 15mΩ max at 4.5V — the 50G has no 4.5V row. Below ~30A the G is the better-engineered answer, not a downgrade.
Do not buy any P-ch for true continuous 50A. 50A² through even 5mΩ is 12.5W before switching loss, and P-ch die economics stop making sense above ~25-30A continuous.
That is the N-ch moment: an N-ch like the NCE30H10K (30V, 100A, 5.5mΩ, TO-252) plus a high-side driver costs the same BOM and halves the loss.
DFN 5x6, leadless, exposed pad — the pad is the drain and the heat. Solder it to a 2oz copper pour with plugged thermal vias; a grid stencil (70-75% open) keeps voids out of the joint.
Footprint family caution: the NCE30P50G and NCE30P30G both use a DFN5×6 leadless body per their datasheets — but pin-to-pin identity across dies is not guaranteed. Verify the pin map against each datasheet figure before layout.
The 7405 socket is a different footprint. AON7405 is DFN 3.3×3.3. Moving to any 5x6 P-ch means a land-pattern change, a copper-area change, and a re-verify of the thermal path.
Fan the drain side wide. At 50A pulses, trace resistance on the pad side burns board watts. Wide pours on both layers, vias at the pad, and the load current spreads like it should.
The board changes, not just the part: DFN 3.3×3.3 to DFN 5x6 means a bigger land pattern, roughly 2.7× the pad area, and a copper pour that has to follow. On a 10V-rail design the 50G covers the electrical job — the layout still has to move.
| Part | Manufacturer | What It Is | Watch Out For |
|---|---|---|---|
| RQ3E120ATTB | Rohm | Listed as an AON7405 successor socket in the 30V P-ch DFN class | Verify pinout and drive row against the Rohm datasheet before swapping |
| AONR21305 | AOS | AOS's own listed successor to the retired 7405 | Same: verify pinout and 4.5V row on the current datasheet |
| 30P30K | NCE | The family's TO-252 light-gate 30A — 31.2nC, EAS 169mJ, hand-solderable tab | 30A class, not 50A; conduction loss rises above ~15A |
| 2 × 30P30G paralleled | NCE | Two 30A DFN P-ch with per-gate Rg can share a 40A-class switch | Paralleling needs matched drive and layout; one N-ch is usually simpler |
The crowded 30V P-ch market is full of look-alikes at every footprint size — that is why this family page exists.
Here's the thing: the 50G's real differentiators are rows, not footprints — published EAS, -200A pulse, a -50A diode row, and an honest 10V-only spec sheet.
Compare those rows at your load current before you compare pinouts, and you will pick correctly most of the time.
Three checks, in order: footprint first (the board decides), copper second (the pad decides the watts), drive rail last (the datasheet row decides the part). Most wrong swaps fail check one or check three.
A: Electrically in the same class; physically no. Both are -30V/-50A P-ch (7mΩ vs 6.2mΩ max at 10V), but the 7405 is DFN 3.3×3.3 and the 50G is DFN 5x6 — different land pattern, different copper area, and a layout change. On a 10V-rail design the 50G covers the job; the board still has to change.
A: An N-ch, not any P-ch. At 50A continuous, 7mΩ alone is 17.5W and P-ch die economics are wrong. An N-ch in the NCE30H10K class (30V/100A/5.5mΩ) with a high-side driver halves the loss for the same BOM. The 50G is a surge-duty part — that is what its rows describe.
A: No — and the family has the answer. The 50G has no 4.5V row; its 7mΩ is a 10V promise. On 4.5V drive, the NCE30P30G guarantees 15mΩ max and the 30P30K 30mΩ max. Same family, 4.5V rows, different die.
A: Both datasheets describe the DFN5×6 leadless body — confirm the pin map per figure. Package family is not pin identity. Check the pin assignment in each datasheet's top-view figure before you trust one layout for both parts.
A: Yes for a 40A-class share, with per-gate resistors — not a free lunch. Two 30A dies share a 40A-class switch if each gate has its own Rg and the layout is symmetrical. But one N-ch plus a driver is usually simpler, cheaper, and lower-loss at that current.
A: Two paths: AOS/Rohm successor sockets, or a footprint change to 5x6 parts. AOS lists AONR21305 and Rohm the RQ3E120ATTB as successor sockets; many boards instead moved to DFN 5x6 P-ch parts like this one. Verify pinout and the drive row on whatever you choose — "successor" is a sales word, the datasheet is the contract.
A: Reverse protection and OR-ing without an external Schottky in the main path. IS -50A with VSD -0.85V typ is a published, rated diode — back-to-back P-ch pairs block reverse current through the opposing body diode. Most 30V P-ch parts leave this row blank; the 50G does not.
A: Test at its own condition: 10V/-10A, max 7mΩ. A genuine part reads within 7mΩ at the -10A test point with VGS(th) in the -1.0 to -2.2V band. A relabeled 30P30G fails immediately — its 10mΩ max at -15A sits above the 50G row even at lighter current.





