UTC UT3N06G‑AB3‑R
- Part No.:
- UT3N06G‑AB3‑R
- Manufacturer:
- UTC
- Category:
- N-Channel MOSFETs
- Package:
- Description:
- UT3N06G-AB3-R – UTC N-Channel 60V 3A Enhancement Mode Power MOSFET Quick Answer The UT3N06G-AB3-R is an N-channel enhancement mode power MOSFET from Unisonic Technologies (UTC). It features low on-resistance, high switching speed, and excellent thermal pe…
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UT3N06G‑AB3‑R Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- UTC
- Series:
- Package/Case:
- Packaging:
- SOT-23
- Product Status:
- Production
- FET Type:
- Industrial grade
- Technology:
- Trench
- Drain to Source Voltage (Vdss):
- N
- Current - Continuous Drain (Id) @ 25°C:
- 30
- Drive Voltage (Max Rds On, Min Rds On):
- 5.8
- Rds On (Max) @ Id, Vgs:
- 0.9
- Vgs(th) (Max) @ Id:
- 22
- Gate Charge (Qg) (Max) @ Vgs:
- 35
- Vgs (Max):
- 24
- Input Capacitance (Ciss) (Max) @ Vds:
- 41
- FET Feature:
- 28
- Power Dissipation (Max):
- 0℃ ~ +70℃
- Operating Temperature:
- ±12
- Grade:
- 820
- Qualification:
- 9.5
- Mounting Type:
- 1.4
- Supplier Device Package:
UT3N06G-AB3-R – UTC N-Channel 60V 3A Enhancement Mode Power MOSFET
Quick Answer The UT3N06G-AB3-R is an N-channel enhancement mode power MOSFET from Unisonic Technologies (UTC). It features low on-resistance, high switching speed, and excellent thermal performance in a compact SOT-89 package. With 60V drain-source voltage and 3A continuous drain current capability, it is ideal for low to medium power switching applications, DC-DC converters, and load switching.
Current Stock at ICMASS: Strong inventory available for immediate worldwide delivery.
Key Specifications
| Parameter | Value | Details |
|---|---|---|
| Manufacturer | Unisonic Technologies (UTC) | Power MOSFET |
| Part Number | UT3N06G-AB3-R | N-Channel Enhancement Mode |
| Package | SOT-89 (AB3) | 3-Pin Surface Mount (Tape & Reel) |
| Drain-Source Voltage (Vdss) | 60 V | Maximum |
| Continuous Drain Current (Id) | 3 A | @ TA=25°C |
| RDS(on) | Low (typ. < 0.1 Ω) | @ Vgs=10V |
| Gate Threshold Voltage | 1.0 – 3.0 V | @ Id=250µA |
| Power Dissipation | 0.69 W | @ TA=25°C |
| Gate Charge (Qg) | 10 nC (typ) @ 10V | Fast switching |
[Download Official UT3N06 Datasheet PDF]
Why Choose UT3N06G-AB3-R?
- Low RDS(on) for high efficiency and low conduction loss
- Compact SOT-89 package for space-constrained designs
- High switching speed with low gate charge
- Excellent thermal performance
- 60V voltage rating suitable for 12V/24V/48V systems
- Pb-free, RoHS compliant, and halogen-free
- Cost-effective high-reliability solution
- Easy to drive with standard logic levels
Typical Applications
- DC-DC buck/boost converters
- Power management in consumer electronics
- LED driver switching
- Battery protection and load switching
- Motor control (low power)
- Adapter and charger circuits
- Industrial control systems
- Portable devices and IoT power switches
UT3N06G-AB3-R Alternatives & Cross Reference Popular Alternatives:
- AO3400 / AO3402 (SOT-23 smaller current)
- BSS138 / IRLML6344 (logic level)
- UTC UT3N06 variants (different packages)
- IRFML8244 / Similar 60V N-MOSFETs from onsemi, Infineon
Comparison Table:
| Model | Vdss | Id (Continuous) | RDS(on) (typ) | Package | Best For |
|---|---|---|---|---|---|
| UT3N06G-AB3-R | 60 V | 3 A | Low | SOT-89 | Medium power, compact |
| AO3400 | 30 V | 5.8 A | Very low | SOT-23 | Low voltage high current |
| BSS138 | 50 V | 0.2 A | Higher | SOT-23 | Signal switching |
| UT3N06L-AA3-R | 60 V | 3 A | Low | SOT-223 | Alternative package |
Purchasing Information at ICMASS
- Stock Status: Strong inventory available
- MOQ: 100 pieces (samples welcome)
- Lead Time: 1-3 days for stock orders
- Shipping: Fast global delivery (DHL, UPS, FedEx)
- Quality Guarantee: 100% genuine UTC components
Get Competitive Quote – Contact us for bulk pricing and technical support.
Frequently Asked Questions (FAQ)
Q1: What is the UT3N06G-AB3-R mainly used for? A: It is a 60V 3A N-channel MOSFET ideal for switching and power conversion in low to medium power applications.
Q2: What is the maximum drain current? A: 3A continuous at TA=25°C.
Q3: What package does the UT3N06G-AB3-R use? A: SOT-89 (AB3) surface mount package, supplied in Tape & Reel.
Q4: What is the maximum drain-source voltage? A: 60 V.
Q5: Is it logic level compatible? A: Yes, with gate threshold suitable for 4.5V~10V drive.
Q6: Does it have built-in protection? A: It features rugged avalanche capability and ESD protection.
Q7: What is the typical RDS(on)? A: Very low on-resistance for minimal power loss.
Q8: Do you have real stock of UT3N06G-AB3-R? A: Yes, we maintain good inventory levels for fast delivery.
Q9: What is the typical gate charge? A: 10 nC @ 10V, enabling fast switching.
Q10: Can you provide reference designs or layout recommendations? A: Yes, we supply official UTC datasheet and application support.
Q11: Do you offer volume pricing? A: Yes. Competitive tiered pricing is available for quantities from 1K to 100K+.
Q12: How does UT3N06G-AB3-R compare to TO-252 package versions? A: SOT-89 offers smaller footprint while maintaining good thermal performance for 3A applications.
Related Products
- UTC UT3Nxx Series Power MOSFETs
- Other UTC N-Channel MOSFETs (60V/100V)
- P-Channel Complementary MOSFETs
- UTC Linear ICs and Power Management Products
| Image |
|
| Part Number | UT3N06G‑AB3‑R |
| Manufacturer | UTC |
| Series | |
| Package/Case | |
| Packaging | SOT-23 |
| Product Status | Production |
| FET Type | Industrial grade |
| Technology | Trench |
| Drain to Source Voltage (Vdss) | N |
| Current - Continuous Drain (Id) @ 25°C | 30 |
| Drive Voltage (Max Rds On, Min Rds On) | 5.8 |
| Rds On (Max) @ Id, Vgs | 0.9 |
| Vgs(th) (Max) @ Id | 22 |
| Gate Charge (Qg) (Max) @ Vgs | 35 |
| Vgs (Max) | 24 |
| Input Capacitance (Ciss) (Max) @ Vds | 41 |
| FET Feature | 28 |
| Power Dissipation (Max) | 0℃ ~ +70℃ |
| Operating Temperature | ±12 |
| Grade | 820 |
| Qualification | 9.5 |
| Mounting Type | 1.4 |
| Supplier Device Package |
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