Infineon Technologies SN7002W L6327

Part No.:
SN7002W L6327
Manufacturer:
Infineon Technologies
Category:
N-Channel MOSFETs
Package:
SC-70, SOT-323
Datasheet:
ICMASS.COMSN7002W L6327.pdf
Description:
MOSFET N-CH 60V 230MA SOT323-3
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Unit Price:$0

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SN7002W L6327 Information

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Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:
1.8V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:
1.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
45 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
500mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT323
Datasheet:
ICMASS.COMSN7002W L6327.pdf
Image SN7002W L6327
Part Number SN7002W L6327
Manufacturer Infineon Technologies
Series SIPMOS®
Package/Case SC-70, SOT-323
Packaging Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 45 pF @ 25 V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-SOT323
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