IRLML2803TRPBF.pdf
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IRLML2803TRPBF.pdf
The IRLML2803TRPBF is a logic-level N-Channel MOSFET in a SOT-23 package from Infineon's 5th-gen HEXFET family. 30V drain-source, 1.2A continuous drain current, 250mΩ RDS(on) at 10V gate drive. What makes it useful? The gate threshold is low - 0.4V to 1V - so you can switch it directly from a 3.3V or 5V microcontroller pin without a driver stage.
It is the go-to part when you need a small, cheap N-FET for light loads and the board space is tight. Think load switches for sensors, LED drivers, signal level shifting, and power gating in battery-powered devices. The SOT-23 footprint is 2.9mm × 1.3mm - fits practically anywhere.
It is an enhancement-mode N-Channel MOSFET. Apply voltage between gate and source above the threshold (1V max), and the channel conducts between drain and source. The lower the RDS(on), the less power you lose as heat. At 250mΩ and 1A, that is about 250mW - manageable for SOT-23 if your PCB has decent copper area.
Infineon's 5th-gen HEXFET process gives it fast switching (3.9ns turn-on, 9ns turn-off) and low gate charge (5nC). You do not need a dedicated gate driver for low-speed switching. A GPIO pin with a 10Ω–100Ω series resistor is enough to get clean switching without ringing.
Position in the product line: This is an entry-level logic-level MOSFET. Not the highest current, not the lowest RDS(on) - but it is cheap, readily available, and works for the vast majority of light-load switching tasks in consumer electronics.
| Parameter | Value | Notes |
|---|---|---|
| Drain-Source Voltage (Vdss) | 30 V | Maximum rating |
| Continuous Drain Current (Id) | 1.2 A | At 25°C, derate for temperature |
| Pulsed Drain Current (Idm) | 7.2 A | 300 µs pulse width |
| RDS(on) @ 10V | 250 mΩ (max) | At Vgs = 10V |
| RDS(on) @ 4.5V | 300 mΩ (max) | Typical 3.3V logic drive |
| Gate Threshold (Vgs(th)) | 0.4V – 1.0V | Tested at 250 µA |
| Gate Charge (Qg) | 5 nC (typ) @ 10V | Low, direct GPIO drive |
| Input Capacitance (Ciss) | 85 pF @ 25V | Affects switching speed |
| Output Capacitance (Coss) | 22 pF | - |
| Reverse Transfer Cap. (Crss) | 5 pF | - |
| Power Dissipation (Pd) | 540 mW | At 25°C ambient |
| Operating Temperature | -55°C to +150°C | Industrial range |
| Package | SOT-23 (Micro3) | 2.9mm × 1.3mm |
Why RDS(on) matters here: 250mΩ at 10V is fine for loads up to ~800mA continuous. If you need to drive 2A+ through SOT-23, you are better off with a lower-RDS(on) part like IRLML6344TRPBF (22mΩ) - but for small signal switching, this is plenty.
Watch the thermal budget. 540mW max at 25°C ambient, and that drops fast as temperature rises. With 1A through 250mΩ, you are at 250mW - about 46% of the budget. Comfortable if your PCB has decent copper pour, but tight in a dense layout.
(TOP VIEW)
D
|
G-| |-S
Pin 1: Gate (G)
Pin 2: Source (S)
Pin 3: Drain (D)
Pin 1 is the gate (top-left when the tab faces away). Simple layout - no special routing needed beyond keeping gate traces short to avoid parasitic oscillation.
You need to cut power to a sensor in sleep mode to save battery. An IRLML2803TRPBF on the high side (with appropriate gate drive) or low side does the job. Draws near-zero leakage current (1µA typ) when off.
Why this part: Low gate charge means fast switching. Low leakage means no wasted battery in sleep.
Need to translate a 5V signal to 3.3V, or vice versa? A single N-FET with a pull-up resistor makes a classic bidirectional level shifter. The IRLML2803TRPBF's low threshold (1V max) works with both 3.3V and 1.8V logic.
Why this part: Low Vgs(th) and tiny package - you can fit 4 level shifters in the space of one DIP-8.
Switching low-power LEDs (up to ~500mA total) in portable devices. PWM dimming works fine - the fast switching edges give clean PWM without visible flicker.
Not for the main switching element (you want a dedicated switching MOSFET for that), but useful for load disconnect, soft-start, or OR-ing diodes on lower-power rails.
Low-side disconnect in single-cell Li-Ion protection circuits. The 30V rating covers 1S (4.2V) with huge margin, though for battery protection you would normally use a dedicated protection IC + dual N-FET.
| Part Number | Manufacturer | Vds | Id | RDS(on) | Notes |
|---|---|---|---|---|---|
| IRLML2803TRPBF | Infineon | 30V | 1.2A | 250mΩ | Reference |
| IRLML2803GTRPBF | Infineon | 30V | ~7A | ~100mΩ | Drop-in, higher performance |
| IRLML2803TR | Infineon | 30V | 1.2A | 250mΩ | Non-RoHS (contains Pb) |
| VB1330 | VBsemi | 30V | 6.5A | 30mΩ | Chinese drop-in, much lower RDS(on) |
| DMN100-7-F | Diodes Inc. | 30V | 1.1A | 240mΩ | Obsolete - use IRLML2803TRPBF as replacement |
| DMG3402L-7 | Diodes Inc. | 30V | 4A | 52mΩ | Higher current, same footprint |
| MGSF1N03LT1G | ON Semi | 30V | 1.6A | 100mΩ | SOT-23, comparable |
Quick selection guide:
| Part Number | Issue |
|---|---|
| IRLML2502GTRPBF | Different SOT-23 footprint variant - not pin-compatible |
| IRLML6402TR | P-Channel - completely different circuit |
| NTR4003NT1G | SOT-23 but 560mA/1.5Ω - too weak for most 2803 applications |
The SOT-23 package is small, but counterfeits are out there. Here is what to check:
Visual inspection:
Electrical quick checks:
Batch traceability: At ICMASS, we source directly from Infineon authorized channels. Each reel comes with full traceability documentation. If you receive parts with missing or blurry date codes, that is a red flag.
Warranty: All IRLML2803TRPBF sold by ICMASS carry manufacturer warranty. If a part is suspect, we replace it - no questions.
A: Yes. The gate threshold is 1V max, so 3.3V logic drives it fully into the ohmic region. At 3.3V gate drive, expect RDS(on) around 300mΩ (typ) - about 20% higher than at 10V but still fine for most loads. Just add a 10Ω–100Ω series resistor to dampen ringing.
A: The suffix. "PBF" = lead-free (Pb-free) and RoHS compliant. "TR" = tape-and-reel packaging but may contain lead (non-RoHS). Electrically identical.
A: Yes, it is pin-compatible and electrically very close (30V/1.2A vs 30V/1.1A, 250mΩ vs 240mΩ). In fact, IRLML2803TRPBF is the recommended active replacement since DMN100-7-F is obsolete.
A: Check your gate drive voltage. If Vgs is below 3V, the MOSFET may be operating in the linear region instead of fully on. At Vgs = 2.5V, RDS(on) can be 500mΩ+ - that means 125mW at 500mA, which in SOT-23 is enough to get warm. Solution: make sure your gate is driven to at least 3.3V, ideally 5V. Also check for oscillation on the gate - a 100Ω resistor in series usually fixes it.
A: With 5nC gate charge and direct GPIO drive, you can comfortably switch at 100kHz. Push it to 500kHz+ if you use a gate driver. The switching times (3.9ns on, 9ns off) are fast enough for MHz-range, but the gate drive circuit becomes the bottleneck.
A: Only if your application stays within the temperature range (-55°C to +150°C). But it is not AEC-Q101 qualified - for automotive, look at Infineon's automotive-grade MOSFETs (e.g., the AUIRL series).
A: Infineon's HEXFETs typically have built-in ESD protection on the gate (2kV HBM). Still, standard ESD handling precautions apply - the gate oxide can be damaged by static discharge even with protection.
A: Typically 1µA at 25°C, rising to about 10µA at 85°C. Low enough for battery-powered devices, but not suitable for ultra-low-power applications where you need nA-level leakage - look at Infineon's OptiMOS series for that.
A: Technically yes, but not recommended. SOT-23 has poor thermal dissipation, and paralleling MOSFETs without ballasting can lead to current hogging and thermal runaway. You are better off using a single larger MOSFET.
A: Standard SOT-23 footprint - 2.9mm × 1.3mm body, 0.95mm pin pitch. The datasheet recommends a copper area of at least 50mm² on the PCB for thermal relief. More copper = better heat dissipation.
A: Genuine parts have sharp, uniform laser marking, consistent date codes across the reel, and gate threshold within 0.4V–1.0V. Counterfeits often have blurry markings, mismatched date/lot codes, or Vgs(th) outside spec. Buy from ICMASS - we source from Infineon direct channels.
| Quantity | Price per unit (USD) |
|---|---|
| 1+ | $0.19 |
| 10+ | $0.15 |
| 50+ | $0.14 |
| 100+ | $0.12 |
| 500+ | $0.10 |
| 1000+ | $0.09 |
| 3000+ (reel) | $0.08 |
Stock: Available for immediate shipment from Shenzhen warehouse.
Lead time: 3-5 business days for small quantities. Reel orders ship within 1-2 weeks depending on Infineon allocation.
Minimum order: No minimum for stocked parts. Sample quantities (1-10 pcs) available for evaluation.
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| Part Number | IRLML2803TRPBF | IRLML2803TRPBF-1 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | HEXFET® | HEXFET® |
| Package/Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Product Status | Active | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) | 1.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | - |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 910mA, 10V | 250mOhm @ 910mA, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V | 5 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 85 pF @ 25 V | 85 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 540mW (Ta) | 540mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Grade | - | - |
| Qualification | - | - |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | Micro3™/SOT-23 | Micro3™/SOT-23 |
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