Infineon Technologies IRF6713STRPBF

Part No.:
IRF6713STRPBF
Manufacturer:
Infineon Technologies
Category:
N-Channel MOSFETs
Package:
DirectFET™ Isometric SQ
Datasheet:
ICMASS.COMIRF6713STRPBF.pdf
Description:
MOSFET N-CH 25V 22A DIRECTFET
Quantity:

Unit Price:$0

Ext Price:$0

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IRF6713STRPBF Information

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Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
DirectFET™ Isometric SQ
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
22A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:
2.4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2880 pF @ 13 V
FET Feature:
-
Power Dissipation (Max):
2.2W (Ta), 42W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DIRECTFET™ SQ
Datasheet:
ICMASS.COMIRF6713STRPBF.pdf
Image IRF6713STRPBF
Part Number IRF6713STRPBF
Manufacturer Infineon Technologies
Series HEXFET®
Package/Case DirectFET™ Isometric SQ
Packaging Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 2.4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2880 pF @ 13 V
FET Feature -
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ SQ
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