What is the main function of this part?

This part is used in electronic circuits for signal control, power management, industrial equipment, consumer electronics, and related applications.

Is the datasheet available for this product?

Yes, you can check the datasheet link on this product page or contact our sales team for technical documents.

Can I request a quotation for bulk quantity?

Yes, you can submit the RFQ form on this page. Our sales team will reply with current stock, price, lead time, and delivery information.

Difference between IRF640NPBF, IRF640N, and IRF640?

N = newer, 150mΩ vs 180mΩ. PBF = lead-free. Interchangeable. Source: FindIC, RS Components.

What are direct replacements?

FQP18N20, STP20NF20 (125mΩ). Use IRFB4620PBF for new designs. Source: DigiKey, Rutronik24.

Why does IRF640NPBF overheat?

Gate drive too low (5V = 700mΩ+ RDS(on), 6.7V D-S drop reported) or no heatsink. Source: EEVblog, seekcpu.com.

Yes above 1A. 62°C/W without heatsink = 84°C rise at 1.35W.

Yes, EAS 247mJ. Source: Infineon datasheet.

10-47Ω. Needs 0.5A+ peak gate driver.

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Name: IRF640NPBF
Brand: Infineon Technologies
SKU: IRF640NPBF
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Infineon Technologies IRF640NPBF

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Part No.:: IRF640NPBF

Manufacturer:: Infineon Technologies

Category:: N-Channel MOSFETs

Package:: TO-220-3

Description:: MOSFET N-CH 200V 18A TO220-3

Quantity:: Add To Cart Add To RFQ list

Unit Price:$0

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IRF640NPBF Information

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Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: UniFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRF640NPBF Datasheet, Price, Alternatives & FAQ - ICMASS

IRF640NPBF - 200V/18A N-Channel HEXFET MOSFET from Infineon

The IRF640NPBF is an N-Channel power MOSFET from Infineon's 5th-gen HEXFET family in TO-220AB. 200V drain-source, 18A continuous drain current, 150mΩ maximum R_DS(on) at 10V gate drive. Standard threshold (2V–4V) - needs 10V gate drive, not logic-level.

It is the "N" generation improvement of the original IRF640, dropping R_DS(on) from 180mΩ to 150mΩ (17% improvement). At 200V, it sits between the IRF540NPBF (100V) and IRFP250NPBF (200V/30A) in Infineon's TO-220 lineup.

Important: If you are driving it from an Arduino or 5V logic pin, pick a logic-level MOSFET instead. The IRF640NPBF will not turn on fully at 5V - documented on EEVblog and Arduino forums.

What Is IRF640NPBF and How Does It Work?

It is a standard N-Channel enhancement-mode MOSFET. Apply 10V between gate and source, and the channel conducts between drain and source. The "N" in IRF640N indicates the newer HEXFET generation with lower R_DS(on) than the original IRF640. Junction temperature is 175°C (vs 150°C on the original).

Critical distinction: This is NOT a logic-level MOSFET. At 5V gate drive, R_DS(on) can be 700mΩ+ - users on EEVblog reported 6.7V drop across D-S when driven from 5V. You need a gate driver.

What Are the Specifications of IRF640NPBF?

Parameter	Value	Notes
V_dss	200 V	For 48V–120V systems
I_d @ 25°C	18 A	-
I_d @ 100°C	13 A	Real-world limit
R_DS(on) @ 10V	150 mΩ (max)	Guaranteed at 10V only
V_gs(th)	2.0V – 4.0V	Standard threshold
Q_g	67 nC (typ)	Needs gate driver
P_d	150 W	Heatsink required
T_j max	175°C	Higher than original (150°C)
Avalanche Rated	Yes	Single-pulse EAS
Package	TO-220AB	Tab = drain

What Is IRF640NPBF Used For?

Motor drives for 48V–120V: 200V rating gives margin for inductive spikes. Needs gate driver.

DC-DC converters: Push-pull and full-bridge at 20–80kHz. 67nC Qg limits frequency.

Power supply switching: Telecom and industrial 48V–72V systems.

Battery chargers: 48V and 72V charger designs. Avalanche rated for inductive transients.

What Are the Alternatives to IRF640NPBF?

Part	Manufacturer	V_ds	I_d	R_DS(on)	Notes
IRF640NPBF	Infineon	200V	18A	150mΩ	Reference
IRF640 (orig)	IR	200V	18A	180mΩ	Older gen, higher R_DS(on)
STP20NF20	STMicro	200V	18A	125mΩ	Lower R_DS(on)
FQP18N20	Fairchild	200V	18A	150mΩ	Same specs
IRFB4620PBF	Infineon	200V	25A	120mΩ	Upgrade for new designs
IRF540NPBF	Infineon	100V	33A	44mΩ	Lower voltage

Status: IRF640NPBF is "Not For New Designs" per Infineon. For new designs consider IRFB4620PBF. Source: DigiKey.

How to Verify Genuine IRF640NPBF?

R_DS(on) test: Apply 10V to gate, 5A through drain-source. Should be ≤ 160mΩ.

V_gs(th) test: 2.0V–4.0V at 250µA. Below 2.0V suggests a logic-level MOSFET mislabeled.

Source: Widely counterfeited on marketplaces. Buy from authorized channels.

Frequently Asked Questions About IRF640NPBF

Q1: Can I drive IRF640NPBF directly from an Arduino?

A: No. This is the most common problem across forums (Arduino Forum, EEVblog, StackExchange). IRF640NPBF is NOT logic-level. Needs 10V gate drive. Arduino GPIO outputs only 5V, leaving R_DS(on) as high as 700mΩ - at 2A that is nearly 3W of heat. Use a logic-level MOSFET like IRLZ44N for MCU drive. Source: Arduino Forum, EEVblog, StackExchange.

Q2: What is the difference between IRF640NPBF, IRF640N, and original IRF640?

A: "N" = newer HEXFET, lower R_DS(on) (150mΩ vs 180mΩ). "PBF" = lead-free RoHS. Electrically interchangeable. Source: FindIC, RS Components, Utsource.

Q3: What are the direct replacements?

A: FQP18N20 (Fairchild, same specs), STP20NF20 (ST, 125mΩ). IRF640NPBF is "Not For New Designs" - use IRFB4620PBF for new designs. Source: DigiKey, FindIC, Rutronik24.

Q4: Why does my IRF640NPBF overheat at only a few amps?

A: Two causes: (1) gate drive too low - at 5V, R_DS(on) can be 700mΩ+ (EEVblog reported 6.7V D-S drop). (2) No heatsink - TO-220 needs one above 1A. Source: EEVblog, Arduino Forum, seekcpu.com.

Q5: Does IRF640NPBF need a heatsink?

A: Yes above 1A. At 3A through 150mΩ = 1.35W. Without heatsink (62°C/W R_θJA), junction rises ~84°C. With clip-on heatsink, ~27°C rise.

Q6: Is IRF640NPBF suitable for 48V/72V systems?

A: 200V gives 4× margin over 48V, 2.8× over 72V. For 120V+, margin is tight (1.6×). Use IRF740 (400V) for higher voltages.

Q7: Is IRF640NPBF avalanche rated?

A: Yes, single-pulse EAS of 247mJ. Safe for inductive switching. Source: Infineon datasheet, Element14.

Q8: What is the max switching frequency?

A: 20–80kHz with proper gate driver. Limited by 67nC gate charge and 1160pF Ciss. Above 100kHz, choose a lower-Qg MOSFET.

Q9: What gate resistor value?

A: 10–47Ω. 67nC needs gate driver with 0.5A+ peak. Higher resistance reduces EMI but increases switching loss.

Q10: IRF640NPBF vs IRF540NPBF?

A: IRF640: 200V/150mΩ. IRF540: 100V/44mΩ. IRF640 handles 2x voltage at 3.4x R_DS(on). Both need 10V gate drive.

Q11: Is the TO-220 tab connected to drain? Need isolation?

A: Yes, tab is drain. Use thermal pad and shoulder washer when mounting to grounded heatsink.

Pricing & Availability

Quantity	Price per unit (USD)
1+	$1.20
50+	$0.85
500+	$0.55
1000+	$0.45

Status: "Not For New Designs." IRFB4620PBF recommended for new designs.

Image
Part Number	IRF640NPBF
Manufacturer	Infineon Technologies
Series	UniFET™
Package/Case	TO-220-3
Packaging	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	145mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1180 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220-3

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