Infineon Technologies AUIRL7766M2TR

Part No.:
AUIRL7766M2TR
Manufacturer:
Infineon Technologies
Category:
N-Channel MOSFETs
Package:
DirectFET™ Isometric M4
Datasheet:
ICMASS.COMAUIRL7766M2TR.pdf
Description:
MOSFET N-CH 100V 10A DIRECTFET
Quantity:

Unit Price:$0

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AUIRL7766M2TR Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
DirectFET™ Isometric M4
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
10mOhm @ 31A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
66 nC @ 4.5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
5305 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 62.5W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DirectFET™ Isometric M4
Datasheet:
ICMASS.COMAUIRL7766M2TR.pdf
Image AUIRL7766M2TR
Part Number AUIRL7766M2TR
Manufacturer Infineon Technologies
Series HEXFET®
Package/Case DirectFET™ Isometric M4
Packaging Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 4.5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 5305 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 62.5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DirectFET™ Isometric M4
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