What is the main function of this part?

This part is used in electronic circuits for signal control, power management, industrial equipment, consumer electronics, and related applications.

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Name: IRLZ44NPBF
Brand: Infineon Technologies
SKU: IRLZ44NPBF
Availability: InStock

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Infineon Technologies IRLZ44NPBF

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Part No.:: IRLZ44NPBF

Manufacturer:: Infineon Technologies

Category:: N-Channel MOSFETs

Package:: TO-220-3

Description:: MOSFET N-CH 55V 75A TO220AB

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Unit Price:$0

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IRLZ44NPBF Information

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Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 66A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRLZ44NPBF - 55V/47A Logic-Level N-Channel HEXFET MOSFET from Infineon

The IRLZ44NPBF is Infineon's logic-level N-Channel HEXFET power MOSFET in a TO-220AB package. 55V drain-source, 47A continuous drain current, 22mΩ R_DS(on) at 10V gate drive. The "L" in the part number means logic-level gate.

The gate threshold is 1V–2V, and R_DS(on) is specified at both 5V and 10V. You can drive it directly from a 5V microcontroller pin without a separate gate driver.

But - and this is important - "logic-level" does not mean "works perfectly at any logic voltage." At 3.3V from an ESP32, R_DS(on) is significantly higher than 22mΩ. That distinction causes a lot of returns and burnt-out projects.

Position in the product line: The logic-level sibling of the IRFZ44NPBF. Same package, similar rating, but optimized for low-voltage gate drive. In continuous production for over 20 years.

What Are the Specifications of IRLZ44NPBF?

Parameter	Value	Notes
V_dss	55 V	Maximum rating
I_d continuous @ 25°C	47 A	-
I_d continuous @ 100°C	33 A	Real-world limit
R_DS(on) @ V_GS=10V	22 mΩ (max)	Full enhancement
R_DS(on) @ V_GS=5V	25–28 mΩ (typ)	5V MCU drive
V_gs(th)	1.0V – 2.0V	Logic-level threshold
Q_g	48 nC @ V_GS=5V	Moderate, GPIO-drivable
C_iss	1700 pF	-
P_d	110 W	Needs heatsink above 3-5A
Package	TO-220AB	3-pin through-hole

Critical spec to understand: The 1-2V threshold is where it STARTS conducting, not where fully on. At 3.3V from an ESP32, R_DS(on) is NOT specified in the datasheet and can be 2-3x higher than the 22mΩ spec. This is the single biggest source of overheating complaints.

What Is IRLZ44NPBF Used For?

Microcontroller-Driven Load Switching

Arduino, STM32, or ESP32 GPIO drives the gate through a 100–220Ω resistor. At 5V it is fully enhanced. At 3.3V, acceptable for loads under 3A only.

DC Motor PWM Control

55ns rise, 24ns fall - supports PWM up to 20kHz (above audible range). Simple speed controller with a 5V MCU.

Battery-Powered Load Management

1V–2V threshold means it turns on even at nearly-depleted battery voltage (3.0V).

IRLZ44NPBF Cross-Reference and Alternatives

Part	Manufacturer	V_ds	I_d	R_DS(on)	Gate	Notes
IRLZ44NPBF	Infineon	55V	47A	22mΩ	Logic	Reference
IRFZ44NPBF	Infineon	55V	49A	17.5mΩ	Standard	⚠ Needs 10V gate drive
STP55NF06L	STMicro	60V	55A	14mΩ	Logic	Upgrade option
FQP30N06L	ON Semi	60V	32A	46mΩ	Logic	Cheaper, lower current

⚠ Critical: IRLZ44NPBF vs IRFZ44NPBF - one letter difference, completely different gate drive. IRLZ44N works at 5V. IRFZ44N needs 10V. Using IRFZ44N with 5V gate drive = overheating. This is the #1 MOSFET selection mistake.

Frequently Asked Questions About IRLZ44NPBF

Q1: Can I use IRLZ44NPBF with an ESP32 at 3.3V?

A: Yes but with limitations. At 3.3V, R_DS(on) rises to about 60–80mΩ - 3x higher than spec. Acceptable for loads under 3A. For higher currents, use a gate driver to boost to 5V/10V.

Q2: What is the difference between IRLZ44NPBF and IRFZ44NPBF?

A: IRLZ44NPBF (L = logic-level) is fully enhanced at 5V. IRFZ44NPBF (no L) needs 10V gate drive. Using IRFZ44N with 5V logic causes overheating. This is the #1 selection mistake.

Q3: Does "logic-level" mean it works at any voltage?

A: No. At 5V it is fully enhanced. At 3.3V, R_DS(on) is 2-3x higher. The 1-2V threshold is where it STARTS conducting, not where it is fully on.

Q4: What gate resistor should I use?

A: 100–220Ω series resistor to protect the MCU GPIO.

Q5: Does IRLZ44NPBF need a heatsink?

A: Without: 3-5A safe. With clip-on: 10-15A. For 20A+: larger heatsink needed.

Q6: Why does my IRLZ44NPBF get hot with ESP32?

A: 3.3V drive does not fully enhance it - R_DS(on) is 60–80mΩ. At 5A that is 1.5-2W. Add a gate driver.

Q7: What happens if I use IRFZ44NPBF instead in my Arduino project?

A: The MOSFET will overheat. IRFZ44N needs 10V gate drive. At 5V, R_DS(on) is 50–100mΩ.

Pricing & Availability

Quantity	Price per unit (USD)
1+	$0.95
10+	$0.75
50+	$0.65
100+	$0.55
500+	$0.50
1000+	$0.47
5000+	$0.40

Lead time: 3-5 business days.

Image
Part Number	IRLZ44NPBF
Manufacturer	Infineon Technologies
Series	HEXFET®
Package/Case	TO-220-3
Packaging	Tube
Product Status	Discontinued at Digi-Key
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	6.5mOhm @ 66A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3450 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	170W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220AB

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