Infineon Technologies IRF3205PBF

Part No.:
IRF3205PBF
Manufacturer:
Infineon Technologies
Category:
N-Channel MOSFETs
Package:
TO-220-3
Description:
MOSFET N-CH 55V 75A TO220AB
Quantity:

Unit Price:$0

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IRF3205PBF Information

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Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 66A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3450 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
170W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRF3205PBF - 55V/110A N-Channel HEXFET Power MOSFET from Infineon

The IRF3205PBF is Infineon's N-Channel HEXFET power MOSFET in a TO-220AB package. 55V drain-source, 110A continuous drain current, 8mΩ RDS(on) at 10V gate drive. That is one of the lowest on-resistances you will find in a TO-220 at this voltage class.

This is not a logic-level MOSFET. It needs 10V gate drive for full enhancement - the threshold is 2V–4V, but the RDS(on) is only guaranteed at VGS=10V. You need a gate driver IC or a 12V rail.

Position in the product line: This is the high-current workhorse. It is the bigger sibling of the IRFZ44NPBF (49A/17.5mΩ) and the standard-threshold counterpart to the IRLZ44NPBF (47A/22mΩ, logic-level).

What Are the Specifications of IRF3205PBF?

Parameter Value Notes
Vdss 55 V Maximum rating
Id continuous @ 25°C 110 A -
Id continuous @ 100°C 78 A Real-world limit
RDS(on) @ VGS=10V 8 mΩ (max) Guaranteed at 10V only
Vgs(th) 2.0V – 4.0V Standard threshold
Qg 146 nC (typ) @ 10V Needs gate driver
Ciss 3247 pF -
Pd 200 W Requires substantial heatsink
Package TO-220AB 3-pin through-hole

What Is IRF3205PBF Used For?

DC-AC Inverters

In a 50/60Hz H-bridge inverter, four IRF3205PBFs handle the switching. The 8mΩ RDS(on) means each transistor dissipates about 8W at 32A RMS.

Motor Control (Brushed DC)

For 12V–24V DC motors up to about 2kW, works as the low-side switch. Needs a gate driver (TC4427, IR2104) and freewheeling diode.

High-Current Load Switching

Power distribution, relay replacement, heating element control - anywhere you need to switch 30A–80A DC efficiently.

IRF3205PBF Cross-Reference and Alternatives

Part Manufacturer Vds Id RDS(on) Notes
IRF3205PBF Infineon 55V 110A 8mΩ Reference
AUIRF3205Z Infineon 55V 110A 8mΩ Automotive AEC-Q101
STP80NF55-06 STMicro 55V 80A 6mΩ Lower RDS(on)
IRF2807PBF Infineon 75V 82A 13mΩ Higher voltage
IRFZ44NPBF Infineon 55V 49A 17.5mΩ Lower current
IRLZ44NPBF Infineon 55V 47A 22mΩ Logic-level

Critical substitution warning:

  • IRF3205 vs IRFZ44NPBF: IRF3205 is the upgrade (110A vs 49A). Both need 10V gate drive. Many engineers overspec and use IRF3205 when IRFZ44N would suffice.
  • IRF3205 vs IRLZ44NPBF: Different gate drive. IRF3205 needs 10V. IRLZ44NPBF is logic-level (5V). Not interchangeable without circuit redesign. This is the most common substitution mistake.

Frequently Asked Questions About IRF3205PBF

Q1: Can I drive IRF3205PBF directly from an Arduino or ESP32?

A: No. It requires 10V gate drive. A 5V GPIO leaves it in the linear region, causing overheating. For direct MCU drive, use IRLZ44NPBF instead.

Q2: What is the difference between IRF3205PBF and IRFZ44NPBF?

A: IRF3205PBF: 110A/8mΩ/146nC. IRFZ44NPBF: 49A/17.5mΩ/42nC. Both need 10V. IRF3205 needs a stronger gate driver.

Q3: What is the difference between IRF3205PBF and IRLZ44NPBF?

A: Gate drive. IRF3205 needs 10V. IRLZ44NPBF is logic-level (5V). Not interchangeable - the most common mistake.

Q4: Does IRF3205PBF need a heatsink?

A: Yes. Without: 5-8A safe. With clip-on: 20-30A. For 50A+: forced air and large extruded heatsink.

Q5: What is the maximum switching frequency?

A: 20-50kHz, limited by 146nC gate charge and 3247pF input capacitance.

Q6: What causes IRF3205PBF to fail?

A: Inadequate gate drive (VGS under 10V), shoot-through in H-bridge, voltage spikes exceeding 55V, inadequate heatsinking.

Q7: Is IRF3205PBF suitable for 24V systems?

A: Yes, 55V gives 2.3× margin. For 48V systems, use IRF2807PBF (75V).

Q8: Is the TO-220 tab connected to drain?

A: Yes. Use a thermal pad and shoulder washer for heatsink isolation.

Pricing & Availability

Quantity Price per unit (USD)
1+ $1.65
10+ $1.20
50+ $0.85
100+ $0.75
500+ $0.65
1000+ $0.55
5000+ $0.48

Lead time: 3-5 business days. Bulk orders within 1 week.

Image IRF3205PBF
Part Number IRF3205PBF
Manufacturer Infineon Technologies
Series HEXFET®
Package/Case TO-220-3
Packaging Tube
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 66A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3450 pF @ 25 V
FET Feature -
Power Dissipation (Max) 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
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