NCEPower NCE9926

Part No.:
NCE9926
Manufacturer:
NCEPower
Category:
N-Channel MOSFETs
Package:
Description:
NCE9926 — 20V/6A Dual N-Channel Power MOSFET (SOP-8)The NCE9926 is a dual N-Channel enhancement-mode power MOSFET from Wuxi NCE Power: two independent 20V/6A channels in one SOP-8. The headline spec is the 2.5V gate drive — RDS(on) is specified…
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NCE9926 Information

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  • Product Details
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Product attributes
Attribute value
Manufacturer:
NCEPower
Series:
Package/Case:
Packaging:
SOP-8
Product Status:
Production
FET Type:
Industrial grade
Technology:
Trench双芯
Drain to Source Voltage (Vdss):
N+N
Current - Continuous Drain (Id) @ 25°C:
20
Drive Voltage (Max Rds On, Min Rds On):
6
Rds On (Max) @ Id, Vgs:
0.75
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Vgs (Max):
20
Input Capacitance (Ciss) (Max) @ Vds:
28
FET Feature:
26
Power Dissipation (Max):
37
Operating Temperature:
±12
Grade:
640
Qualification:
10
Mounting Type:
1.25
Supplier Device Package:

NCE9926 — 20V/6A Dual N-Channel Power MOSFET (SOP-8)

The NCE9926 is a dual N-Channel enhancement-mode power MOSFET from Wuxi NCE Power: two independent 20V/6A channels in one SOP-8. The headline spec is the 2.5V gate drive — RDS(on) is specified at 2.5V, so a 3.3V or even 1.8V logic rail turns it on fully, not partially.

From what we see in Shenzhen (2025–2026), the 9926 family is the dual N-Channel workhorse behind battery protection boards and low-voltage load switches.

The most common design failure we're asked about isn't the part — it's the high-side N-Channel gate drive. When the source floats up to the rail, a battery-referenced MCU pin can't produce enough VGS, and the switch never fully turns on.

Both channels are independent (D1 and D2 on separate pins), which matters: for battery protection you connect D1 and D2 together on the PCB — back-to-back channels block current in both directions.

What Are the Technical Specifications of NCE9926?

ParameterValue
TypeDual N-Channel Enhancement Mode Power MOSFET (Trench)
PackageSOP-8 (SO-8), 2500/reel, RoHS / halogen-free
Drain-Source Voltage (VDS)20V
Gate-Source Voltage (VGS)±10V
Continuous Drain Current (ID)6A per channel @ 25°C; 3.8A @ 100°C
Pulsed Drain Current (IDM)25A per channel
On-Resistance RDS(on) @ 4.5V28mΩ max
On-Resistance RDS(on) @ 2.5V37mΩ max
Gate Threshold Voltage (VGS(th))0.6V to 1.5V (typ 1.2V)
Max Power Dissipation (PD)1.25W @ 25°C
Total Gate Charge (Qg)4nC typ @ 4.5V
Input Capacitance (Ciss)640pF typ
Operating Junction Temperature-55°C to +150°C

Key numbers that matter: the 2.5V RDS(on) spec is rare at this current level. VGS(th) sits at 0.6–1.5V, so the channel is fully enhanced well before 3.3V — unlike parts specified only at 4.5V or 10V, there's no "partially on" zone at logic levels.

Per the NCE9926 datasheet, 6A per channel at 28mΩ means about 1W of conduction loss at full load — and PD is only 1.25W. The SOP-8 package is the real limit.

Treat it as a 2–4A per channel workhorse with pulses up to 25A, not a continuous 6A part.

The 4nC gate charge per channel is tiny. Two MCU pins through 100Ω–1kΩ series resistors switch both channels cleanly at load-switch speeds.

When Should You Use (and NOT Use) the NCE9926?

✅ Use NCE9926 when:

  • Battery protection with a DW01-class IC. Two channels tied drain-to-drain block charge and discharge paths independently — the standard 1S Li-ion protection topology. The 0.6–1.5V threshold matches what a protection IC can actually drive.
  • Load switching from 1.8V–3.3V logic. With RDS(on) specified at 2.5V, an MCU GPIO turns the channel fully on. No level shifter, no driver stage.
  • Low-voltage power gating (5V, 3.3V rails). The 20V rating covers the rail with room for transients, and the 25A pulse rating absorbs capacitive inrush.
  • Two independent switches in one footprint. LED banks, motor half-bridges at low voltage, or dual-load gating — one SOP-8 replaces two SOT-23s and their PCB area.
  • UPS and hard-switched circuits at moderate frequency. 4nC gate charge keeps driver losses low at tens of kHz.

❌ Don't use NCE9926 when:

  • You need more than ~4A continuous per channel. The 1.25W PD budget runs out fast. Two channels in parallel help only if you control current sharing — otherwise step up to a TO-252 or a dual with a proper heatsink tab.
  • Gate drive can exceed ±10V. A 12V rail with the gate pulled to ground puts 12V across VGS. Use a Zener clamp or divider.
  • High-side switching above 3.3V logic. The part turns on, but an N-Channel's source floats with the load — you need a charge pump or level shifter. For simple high-side from 5V+, a P-Channel like NCE9435 is the easier answer.
  • Sub-milliohm or high-current power stages (>10A). 28mΩ is a logic-level part's resistance, not a power stage's. Look at TO-252 or DPAK duals.

What Are the Alternatives to NCE9926?

ModelTypeKey DifferenceBest For
SI9926DYDual N-Ch, SOP-820V/6.5A, 30mΩ @ 4.5V, onsemi/TEMICBranded drop-in; same pin layout as NCE9926
NCE9926ADual N-Ch, SOP-82.5V-specified PowerTrench-class updateDirect upgrade from the same manufacturer
AFN8205Dual N-Ch, SOT-23-620V/4A common-drain, the DW01 companionTiny battery-protection boards where SOP-8 is too big
NCE9926-VBDual N-Ch, SOP-826mΩ @ 4.5V, VBsemi-compatibleSecond-source cross-reference, tighter RDS(on)
NCE9435Single P-Ch, SOP-8-30V/-5.1A, 4.5V driveHigh-side switching without a gate driver

The dual-N decision in one line: if the board is battery protection or sub-5V load switching, NCE9926 is the shape of the answer — two independent channels you tie into whatever topology you need. For simple high-side switching, the NCE9435 P-Channel avoids the floating-source drive problem entirely.

9926 1 S1 2 G1 3 S2 4 G2 5 D2 6 D2 7 D1 8 D1 Channel 1: S1/G1 (pins 1–2) Channel 2: S2/G2 (pins 3–4) Drain pins: D1 = 7–8, D2 = 5–6 (independent)

SOP-8 pinout: two independent channels — S1/G1 on pins 1–2, S2/G2 on pins 3–4, drains on pins 5–8 (D2 = 5–6, D1 = 7–8). For battery protection, tie D1 and D2 together on the PCB.

B+ B- P- P+ D1-D2 tied (common drain) G1 ← DW01 OC (over-charge) G2 ← DW01 OD (over-discharge)

1S Li-ion protection topology: two channels in series between B- and P-, drains tied together. G1 (OC) opens on over-charge, G2 (OD) on over-discharge — each body diode blocks the direction it would otherwise leak, so both directions are cut when both gates are off.

RDS(on) per channel — the logic-drive advantage:

NCE9926 @ 4.5V28mΩ max
NCE9926 @ 2.5V37mΩ max
SI9926DY @ 4.5V30mΩ
NCE9926-VB @ 4.5V26mΩ

Dropping from 4.5V to 2.5V drive costs only ~30% on-resistance — the price of being fully specified at logic levels. Parts rated only at 4.5V pay the same penalty but unspecified.

What Are the Typical Applications of NCE9926?

1S Li-ion battery protection (DW01-class): The two channels connect drain-to-drain between the cell and the P+ terminal. One channel opens on over-discharge, the other on over-charge.

Because each body diode points the opposite way, current is blocked in both directions when both channels are off. This is the topology behind most 18650 protection boards.

Low-voltage load switching: At 3.3V or 5V rails, a GPIO drives the gate through a series resistor. With RDS(on) guaranteed at 2.5V, the channel is fully on — no partial enhancement, no headroom surprises.

Battery-powered instrument power gating: Two independent switches in one package let one part gate the main rail and the standby rail separately. The 4nC gate charge keeps both switches fast, and the 25A pulse rating swallows the inrush of a charging bulk capacitor.

UPS and hard-switched auxiliary circuits: The datasheet's listed applications include UPS and high-frequency hard switching — at tens of kHz the low gate charge keeps driver loss negligible.

Why Buy NCE9926 from ICMASS?

Tested at the threshold that matters. We batch-test VGS(th) and RDS(on) at 2.5V before shipping. In our experience (2025–2026), remarked duals are common — a part marked 9926 with a higher-threshold die inside fails exactly at the 2.5V measurement a logic-driven design depends on.

Cross-reference support for the whole dual-N family. Not sure whether your protection board wants NCE9926, SI9926DY, or a SOT-23-6 like AFN8205? Tell us the battery count, load current, and gate drive — we'll match the part.

BOM consolidation for battery products. The same 1S pack BOM carries the protection IC, the TP4056 charger, and the NCE9926 dual MOSFET. One shipment, one supplier, no cross-channel surprises.

Same-day dispatch, 5–10 days worldwide. Orders before 15:00 CST ship same day via DHL or FedEx.

Frequently Asked Questions About NCE9926

Q1: Can I replace an SI9926DY with an NCE9926 directly?

A: Yes — with one pinout check. The NCE9926 matches the onsemi/TEMIC SI9926DY layout (S1/G1 on pins 1–2, S2/G2 on 3–4, D2 on 5–6, D1 on 7–8). Some KEXIN-branded SI9926DY-HF parts use a different arrangement — verify against the specific datasheet before layout. Ratings are equivalent: 20V, ~6A, ~28mΩ.

Q2: Why does battery protection need two MOSFETs?

A: One MOSFET's body diode always conducts one way. A single channel that blocks discharge still lets the battery charge through its body diode, and vice versa. Two channels tied drain-to-drain (back-to-back) block current in both directions when both gates are off — that's the whole point of the dual configuration.

Q3: My high-side N-Channel switch never turns on — why?

A: The source floats up to the rail, so gate drive disappears. An N-Channel needs VGS above threshold, but when the source sits at the battery rail, a battery-referenced MCU pin can't pull the gate high enough. This is the #1 N-Channel high-side failure across the forums. Use a charge pump, a level shifter, or switch to a P-Channel like the NCE9435.

Q4: My protection board's second FET only conducts with "reversed" drain-source voltage — is it faulty?

A: No — MOSFETs are 4-quadrant devices. A channel turns on fully regardless of drain-source polarity as long as VGS is above threshold. In DW01-type circuits one FET seeing negative VDS while turning on is normal operation, not a defect. This confuses first-time battery-protection builders constantly.

Q5: Where should the gate pull-down resistors connect?

A: To each battery's own negative terminal, not a shared GND. If a converter ties one cell's negative to ground, gate voltages shift, both channels partially turn on, and cells at different voltages start equalizing through the MOSFETs — dangerous current that forum threads document with parts being destroyed. Reference gates to the cell they protect.

Q6: Can I drive NCE9926 from 1.8V logic?

A: Yes — this is the part's differentiator. VGS(th) is 0.6–1.5V and RDS(on) is specified at 2.5V, so 1.8V logic partially enhances and 3.3V turns it fully on. Compare with parts specified only at 4.5V — at 3.3V those run at unspecified, elevated resistance.

Q7: What's the real continuous current limit?

A: Budget 2–4A per channel; the package is the limit. The datasheet lists 6A @ 25°C, but PD is 1.25W and 6A at 28mΩ is about 1W — leaving almost no thermal margin. Treat 4A as the practical ceiling with good copper, and use the 25A pulse rating for transients only.

Q8: NCE9926 vs NCE9926A — what changed?

A: The -A is the current-generation die, optimized for 2.5V-specified drive. Same 20V/6A rating and SOP-8 pinout, with tighter RDS(on) characterization. The original NCE9926 remains widely stocked; the -A is what new production mostly ships as.

Q9: My simulation shows FET2 won't turn off — is the real circuit broken?

A: Probably a SPICE model artifact. In simulations, a floating source node can leak current through the substrate diode into the other FET's path — a sneak path that doesn't exist in the real circuit where the ground node stays at battery ground. Known issue when simulating DW01-class protection with generic models.

Q10: What happens if VGS exceeds 10V?

A: You're out of the ±10V absolute maximum — the gate oxide takes damage. In 12V+ rails, pull the gate to ground through a divider or clamp with a Zener. The low threshold means you never need more than ~5V of drive anyway.

Image NCE9926
Part Number NCE9926
Manufacturer NCEPower
Series
Package/Case
Packaging SOP-8
Product Status Production
FET Type Industrial grade
Technology Trench双芯
Drain to Source Voltage (Vdss) N+N
Current - Continuous Drain (Id) @ 25°C 20
Drive Voltage (Max Rds On, Min Rds On) 6
Rds On (Max) @ Id, Vgs 0.75
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max) 20
Input Capacitance (Ciss) (Max) @ Vds 28
FET Feature 26
Power Dissipation (Max) 37
Operating Temperature ±12
Grade 640
Qualification 10
Mounting Type 1.25
Supplier Device Package
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