NCEPower NCE40H12K

Part No.:
NCE40H12K
Manufacturer:
NCEPower
Category:
N-Channel MOSFETs
Package:
Description:
NCE40H12K — 40V/120A N-Channel Power MOSFET (TO-252-2L)The NCE40H12K is a 40V, 120A N-channel power MOSFET from Wuxi NCE Power in a TO-252-2L package, datasheet v1.0. It carries the same 120A headline and the same 1.25°C/W thermal path as the 30V…
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NCE40H12K Information

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Product attributes
Attribute value
Manufacturer:
NCEPower
Series:
Package/Case:
Packaging:
TO-252
Product Status:
Production
FET Type:
Industrial grade
Technology:
Trench
Drain to Source Voltage (Vdss):
N
Current - Continuous Drain (Id) @ 25°C:
40
Drive Voltage (Max Rds On, Min Rds On):
120
Rds On (Max) @ Id, Vgs:
1.8
Vgs(th) (Max) @ Id:
3.6
Gate Charge (Qg) (Max) @ Vgs:
4
Vgs (Max):
5.8
Input Capacitance (Ciss) (Max) @ Vds:
7
FET Feature:
Power Dissipation (Max):
Operating Temperature:
±20
Grade:
5400
Qualification:
75
Mounting Type:
130
Supplier Device Package:

NCE40H12K — 40V/120A N-Channel Power MOSFET (TO-252-2L)

The NCE40H12K is a 40V, 120A N-channel power MOSFET from Wuxi NCE Power in a TO-252-2L package, datasheet v1.0. It carries the same 120A headline and the same 1.25°C/W thermal path as the 30V NCE30H12K — at a higher voltage.

From what we see across Shenzhen reorders (2025–2026), the 40V step gets taken reluctantly, as if voltage were something you pay for. On this die it isn't.

Here's the comparison that decides it: the guaranteed maximum on-resistance is 4.0mΩ here against the 30V part's 4.5mΩ, at the same 20A test current. The higher-voltage part is the stronger one on the row you're supposed to design against.

But the typical values run the other way — 3.6mΩ here against 3.5mΩ on the 30V part. Which of those two rows you read is the whole decision, and only one of them is guaranteed.

It also publishes a 4.5V row that the 30H12K does not have, and a 1.2–2.5V threshold window. Both matter the moment your driver stops being a clean 10V rail.

What Are the Technical Specifications of NCE40H12K?

ParameterValue
TypeN-Channel Enhancement Mode Power MOSFET (trench)
PackageTO-252-2L (DPAK), tab = Drain
Drain-Source Voltage (VDS)40V min / 45V typ
Gate-Source Voltage (VGS)±20V
Continuous Drain Current (ID)120A @ TC = 25°C
Continuous Drain Current (ID)85A @ TC = 100°C
Pulsed Drain Current (IDM)330A
RDS(on) @ VGS = 10V4.0mΩ max (typ 3.6mΩ, ID = 20A)
RDS(on) @ VGS = 4.5V7.0mΩ max (typ 5.8mΩ, ID = 10A)
Gate Threshold (VGS(th))1.2V min / 1.8V typ / 2.5V max
Forward Transconductance (gfs)26S min (VDS = 10V, ID = 20A)
Input / Output CapacitanceCiss 5400pF / Coss 970pF / Crss 380pF
Total Gate Charge (Qg)75nC (VDS = 20V, VGS = 10V, ID = 20A)
Gate-Source / Gate-Drain ChargeQgs 10.5nC / Qgd 17nC
Switching (td(on)/tr/td(off)/tf)15 / 18 / 52 / 23 ns (VDD = 20V, ID = 2A, RL = 1Ω, RG = 3Ω)
Body Diode Forward Voltage (VSD)1.2V typ (IS = 40A)
Reverse Recovery (trr / Qrr)42ns / 45nC (IF = 40A, di/dt = 100A/µs)
Single-Pulse Avalanche Energy (EAS)1080mJ (L = 1mH, Rg = 25Ω, VDD = 20V, IAS = 46.5A, Tj = 25°C)
Max Power Dissipation (PD)120W @ TC = 25°C
Derating Factor0.8W/°C (published)
Thermal Resistance (RθJC)1.25°C/W
Operating Junction Temperature−55°C to 175°C

Note what is identical to the 30V part: 120A, 1.25°C/W, 120W, and the same ±20V gate window. The two parts are the same thermal and current class. Only the voltage rating and the resistance rows moved.

And the resistance rows moved in a direction that surprises people. Line up the four numbers:

NCE30H12K typical at 10V, 20A — not guaranteed3.5mΩ
NCE40H12K typical at 10V, 20A — not guaranteed3.6mΩ
NCE40H12K guaranteed maximum, same test4.0mΩ
NCE30H12K guaranteed maximum, same test4.5mΩ

Read the top two rows and the 30V part wins by a tenth of a milliohm. Read the bottom two and the 40V part wins by half a milliohm. Only the bottom two are promises.

Why does that ordering exist at all? Because voltage class is not what sets resistance here — die generation is, and this die is newer than the 30V one it shares a footprint with.

When Should You Use (and NOT Use) the NCE40H12K?

✅ Use NCE40H12K when:

  • Your rail is 24V. A 24V rail sits exactly at 80% of a 30V rating — the conventional derating limit — with nothing left for switching-node overshoot. The 40V part puts the same rail at 60%.
  • You design against guaranteed limits. 4.0mΩ max at 10V is the best number in this TO-252 family at the 120A class, and it is the row a worst-case loss calculation is supposed to use.
  • Your gate drive is 4.5V or 5V. The 4.5V row publishes 7.0mΩ max at a 10A test current. The 30H12K has no such row at all.
  • You're swapping up from the 30H12K. Same footprint, same 1G/2D/3S pinout, same drain tab, same thermal resistance — the change is a reflow.
  • Your gate loop is long or your driver is weak. Reverse transfer capacitance is 380pF, the lowest of the three 120A-class parts here — against 456pF on the 30H12K and 563pF on the 30H15K. Less Crss means less Miller coupling into a slow gate.

❌ Don't use NCE40H12K when:

  • You need the lowest resistance at 4.5V. The 30V NCE30H15K publishes 5.0mΩ max at the same 4.5V and 10A condition — 2mΩ better. If your driver is 5V, that part wins.
  • Your load is inductive and unclamped. EAS is 1080mJ here against the 30H15K's 1700mJ. Ruggedness is where the 30V family spends its advantage.
  • Your rail is 12V or lower. A 40V rating buys margin you cannot use, on a die whose 25°C typical is a hair worse than the 30V part's.
  • You want 120A continuous on a normal board. The 85A row assumes a 100°C case, which means removing 60W through copper. Tens of amps is the realistic band.
  • Your rail is above 40V. This is the top of the family; the next step is a different device class, not a different suffix.

What Are the Alternatives to NCE40H12K?

ModelTypeKey DifferenceBest For
NCE30H12KN-Ch 30V/120A, TO-252-2LIdentical current and thermal class, 4.5mΩ max at 10V, no 4.5V row, 84A at a 100°C caseClamped loads on rails where 30V is already enough
NCE30H15KN-Ch 30V/150A, TO-252-2L4.0mΩ max at 10V and 5.0mΩ at 4.5V, EAS 1700mJ — better on low-voltage drive and on avalanche5V-drive designs and inductive loads at 30V
NCE30H10KN-Ch 30V/100A, TO-252-2L5.5mΩ at 10V, 70A at a 100°C case, no 4.5V row — the family's entry stepCost-driven designs at the lower current class
NCE0115KN-Ch 100V/15A, TO-252-2LSame package, 80mΩ at 10V, 15A — voltage without current48V and 72V rails where nothing else in this family reaches

So when is the voltage step the right call? Whenever the rail is 24V and the load is not inductive — and the answer is not close.

But how much room is actually left above a 24V rail?

An engineering write-up of a 24V LLC design measured switch-node ringing reaching 36V at the drain. A 30V part is already outside its rating at that point.

The conventional rule keeps the measured peak under 80% of the rating. That caps a 30V device at 24V — the rail itself, before any transient arrives.

Rail headroom at 24V — where the peak actually lands NCE30H12K, rated 30V NCE40H12K, rated 40V 36V measured ringing The dashed line marks 24V — a 24V rail is exactly 80% of a 30V rating, with nothing left over. The 40V part puts the same rail at 60% and still contains a 36V excursion. 0 15 30 45 Drain-source voltage, V

Both bars are the same die class, the same package and the same thermal path. The only difference is how much room is left above the rail — 6V on the 30V part, 16V on the 40V part.

Gate drive at 4.5V — who publishes a row, and what it costs NCE40H12K 7.0mΩ NCE30H15K 5.0mΩ NCE30H12K no 4.5V row in the sheet NCE30H10K no 4.5V row in the sheet 0 2.5 5.0 7.5 R_DS(on) maximum at 4.5V, milliohms

Half the family publishes a 4.5V row and half does not, and the ranking at 4.5V is not the ranking at 10V. The 30V part is 2mΩ better exactly where a 5V driver operates.

What Are the Typical Applications of NCE40H12K?

24V rail switching. This is the application the part exists for. A 24V rail lands on 60% of the rating, leaving room for the overshoot that hard-switched nodes produce on real layouts.

Battery packs at 6 or 7 series cells. A fully charged 7-cell pack sits near 29V, which is already past the 80% line for a 30V device and inside it for a 40V one.

Motor phases in 24V drives. E-bike controllers and small BLDC stages see the rail plus commutation spikes. The 380pF reverse transfer capacitance keeps Miller coupling low for a slow or long gate loop.

Load switching with a 5V gate driver. The 4.5V row is published at 7.0mΩ max, so a 5V rail is a characterized operating point rather than a guess.

Why Buy NCE40H12K from ICMASS?

We sample-test NCE40H12K lots at both published rows: 4.0mΩ maximum at 10V / 20A and 7.0mΩ maximum at 4.5V / 10A. Two rows means two things to measure against, and both appear in the same sheet.

This part number also carries a clone line. VBsemi lists a NCE40H12K-VB in TO-252, and third-party cross-reference tables recycle rounded figures that do not match either row. When a listing disagrees with the PDF, the PDF with the revision number wins.

We hold the whole TO-252 ladder — 30H10K, 30H12K, 30H15K and 40H12K — with the official sheet for each. Recommending the 40V part for a 24V rail, and the 30V 15K for a 5V-driven inductive load, is the same conversation when all four are on the shelf.

Orders ship same day from Shenzhen, with volume pricing that keeps a genuine 40V TO-252 competitive against clone stock wearing the same code.

Frequently Asked Questions About NCE40H12K

Q1: Is a 30V MOSFET enough for a 24V rail?

A: On paper, and only on paper. The common derating rule keeps the measured peak below 80% of the rating, and 24V is exactly 80% of 30V — so the rail alone consumes the entire margin. Any switching-node overshoot goes past it. One published 24V LLC design measured 36V of ringing at the switch node.

Q2: Why does the 40V part have a lower maximum resistance than the 30V one?

A: Because the two dice are from different generations, not from the same design at two voltages. Both are 120A parts with a 1.25°C/W thermal path and a ±20V gate window, but the 40V device guarantees 4.0mΩ max at 10V against the 30V part's 4.5mΩ. Voltage class is not the axis this family sorts on.

Q3: Should I design to the typical value or the maximum?

A: The maximum, and then adjust it for temperature. Typical values describe a median unit, not the one on your board, and conduction loss scales with the resistance you actually get. On this pair the typical figures are 3.5mΩ and 3.6mΩ — a ranking that reverses the moment you use the guaranteed rows instead.

Q4: Can I drive the gate with 5V?

A: Yes — a 4.5V row is published. 7.0mΩ max and 5.8mΩ typical, both at a 10A test current. Note that the 30V NCE30H15K publishes 5.0mΩ at the same condition, so if your driver is 5V the 30V part is the better choice, not the compromise.

Q5: What is the avalanche rating and at what test condition?

A: 1080mJ at IAS = 46.5A, L = 1mH, from a 25°C junction. That sits between the 30H12K's 350mJ and the 30H15K's 1700mJ. Avalanche capability falls as avalanche current rises, so the current and inductance matter as much as the energy figure.

Q6: How much current can it carry continuously in a real design?

A: Tens of amps. The 85A row assumes a 100°C case, so the board is already shedding about 60W. Run the self-heating equation on a 40°C/W board and the realistic figure is near 19A at a 125°C junction. Treat the printed current as a die limit and the copper as the real constraint.

Q7: Is the 40H12K a drop-in replacement for the 30H12K?

A: Electrically yes, mechanically yes, and you gain margin on both. Same TO-252-2L outline, same 1G/2D/3S pinout, same drain tab, same 1.25°C/W. The higher rating changes nothing about the footprint, the gate drive requirement or the thermal path.

Q8: Why does the switching table quote RL = 1Ω?

A: Because switching times are a function of the test load, not just the die. This sheet uses RL = 1Ω and ID = 2A; the 30H12K's row uses RL = 0.75Ω and the 30H15K's uses RL = 15Ω. Compare the gate charge instead, at matched gate-drive voltage, or measure on your own board.

Q9: Is there a clone of this part number?

A: Yes — VBsemi lists a NCE40H12K-VB. Cross-reference databases also recycle rounded or third-party figures for all four parts in this family, and those numbers do not always agree with the official sheets. Verify against the PDF revision, not the listing.

Q10: What is the 380pF reverse transfer capacitance worth?

A: Less Miller coupling into a slow or long gate loop. Crss is the capacitance that feeds drain dv/dt back into the gate. At 380pF this part is the lowest of the three 120A-class parts here — the 30H12K is 456pF and the 30H15K is 563pF. Combined with 17nC of gate-drain charge, it sets how much of the drain edge lands on your gate resistor.

Image NCE40H12K
Part Number NCE40H12K
Manufacturer NCEPower
Series
Package/Case
Packaging TO-252
Product Status Production
FET Type Industrial grade
Technology Trench
Drain to Source Voltage (Vdss) N
Current - Continuous Drain (Id) @ 25°C 40
Drive Voltage (Max Rds On, Min Rds On) 120
Rds On (Max) @ Id, Vgs 1.8
Vgs(th) (Max) @ Id 3.6
Gate Charge (Qg) (Max) @ Vgs 4
Vgs (Max) 5.8
Input Capacitance (Ciss) (Max) @ Vds 7
FET Feature
Power Dissipation (Max)
Operating Temperature ±20
Grade 5400
Qualification 75
Mounting Type 130
Supplier Device Package
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