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The NCE40H12K is a 40V, 120A N-channel power MOSFET from Wuxi NCE Power in a TO-252-2L package, datasheet v1.0. It carries the same 120A headline and the same 1.25°C/W thermal path as the 30V NCE30H12K — at a higher voltage.
From what we see across Shenzhen reorders (2025–2026), the 40V step gets taken reluctantly, as if voltage were something you pay for. On this die it isn't.
Here's the comparison that decides it: the guaranteed maximum on-resistance is 4.0mΩ here against the 30V part's 4.5mΩ, at the same 20A test current. The higher-voltage part is the stronger one on the row you're supposed to design against.
But the typical values run the other way — 3.6mΩ here against 3.5mΩ on the 30V part. Which of those two rows you read is the whole decision, and only one of them is guaranteed.
It also publishes a 4.5V row that the 30H12K does not have, and a 1.2–2.5V threshold window. Both matter the moment your driver stops being a clean 10V rail.
| Parameter | Value |
|---|---|
| Type | N-Channel Enhancement Mode Power MOSFET (trench) |
| Package | TO-252-2L (DPAK), tab = Drain |
| Drain-Source Voltage (VDS) | 40V min / 45V typ |
| Gate-Source Voltage (VGS) | ±20V |
| Continuous Drain Current (ID) | 120A @ TC = 25°C |
| Continuous Drain Current (ID) | 85A @ TC = 100°C |
| Pulsed Drain Current (IDM) | 330A |
| RDS(on) @ VGS = 10V | 4.0mΩ max (typ 3.6mΩ, ID = 20A) |
| RDS(on) @ VGS = 4.5V | 7.0mΩ max (typ 5.8mΩ, ID = 10A) |
| Gate Threshold (VGS(th)) | 1.2V min / 1.8V typ / 2.5V max |
| Forward Transconductance (gfs) | 26S min (VDS = 10V, ID = 20A) |
| Input / Output Capacitance | Ciss 5400pF / Coss 970pF / Crss 380pF |
| Total Gate Charge (Qg) | 75nC (VDS = 20V, VGS = 10V, ID = 20A) |
| Gate-Source / Gate-Drain Charge | Qgs 10.5nC / Qgd 17nC |
| Switching (td(on)/tr/td(off)/tf) | 15 / 18 / 52 / 23 ns (VDD = 20V, ID = 2A, RL = 1Ω, RG = 3Ω) |
| Body Diode Forward Voltage (VSD) | 1.2V typ (IS = 40A) |
| Reverse Recovery (trr / Qrr) | 42ns / 45nC (IF = 40A, di/dt = 100A/µs) |
| Single-Pulse Avalanche Energy (EAS) | 1080mJ (L = 1mH, Rg = 25Ω, VDD = 20V, IAS = 46.5A, Tj = 25°C) |
| Max Power Dissipation (PD) | 120W @ TC = 25°C |
| Derating Factor | 0.8W/°C (published) |
| Thermal Resistance (RθJC) | 1.25°C/W |
| Operating Junction Temperature | −55°C to 175°C |
Note what is identical to the 30V part: 120A, 1.25°C/W, 120W, and the same ±20V gate window. The two parts are the same thermal and current class. Only the voltage rating and the resistance rows moved.
And the resistance rows moved in a direction that surprises people. Line up the four numbers:
Read the top two rows and the 30V part wins by a tenth of a milliohm. Read the bottom two and the 40V part wins by half a milliohm. Only the bottom two are promises.
Why does that ordering exist at all? Because voltage class is not what sets resistance here — die generation is, and this die is newer than the 30V one it shares a footprint with.
✅ Use NCE40H12K when:
❌ Don't use NCE40H12K when:
| Model | Type | Key Difference | Best For |
|---|---|---|---|
| NCE30H12K | N-Ch 30V/120A, TO-252-2L | Identical current and thermal class, 4.5mΩ max at 10V, no 4.5V row, 84A at a 100°C case | Clamped loads on rails where 30V is already enough |
| NCE30H15K | N-Ch 30V/150A, TO-252-2L | 4.0mΩ max at 10V and 5.0mΩ at 4.5V, EAS 1700mJ — better on low-voltage drive and on avalanche | 5V-drive designs and inductive loads at 30V |
| NCE30H10K | N-Ch 30V/100A, TO-252-2L | 5.5mΩ at 10V, 70A at a 100°C case, no 4.5V row — the family's entry step | Cost-driven designs at the lower current class |
| NCE0115K | N-Ch 100V/15A, TO-252-2L | Same package, 80mΩ at 10V, 15A — voltage without current | 48V and 72V rails where nothing else in this family reaches |
So when is the voltage step the right call? Whenever the rail is 24V and the load is not inductive — and the answer is not close.
But how much room is actually left above a 24V rail?
An engineering write-up of a 24V LLC design measured switch-node ringing reaching 36V at the drain. A 30V part is already outside its rating at that point.
The conventional rule keeps the measured peak under 80% of the rating. That caps a 30V device at 24V — the rail itself, before any transient arrives.
Both bars are the same die class, the same package and the same thermal path. The only difference is how much room is left above the rail — 6V on the 30V part, 16V on the 40V part.
Half the family publishes a 4.5V row and half does not, and the ranking at 4.5V is not the ranking at 10V. The 30V part is 2mΩ better exactly where a 5V driver operates.
24V rail switching. This is the application the part exists for. A 24V rail lands on 60% of the rating, leaving room for the overshoot that hard-switched nodes produce on real layouts.
Battery packs at 6 or 7 series cells. A fully charged 7-cell pack sits near 29V, which is already past the 80% line for a 30V device and inside it for a 40V one.
Motor phases in 24V drives. E-bike controllers and small BLDC stages see the rail plus commutation spikes. The 380pF reverse transfer capacitance keeps Miller coupling low for a slow or long gate loop.
Load switching with a 5V gate driver. The 4.5V row is published at 7.0mΩ max, so a 5V rail is a characterized operating point rather than a guess.
We sample-test NCE40H12K lots at both published rows: 4.0mΩ maximum at 10V / 20A and 7.0mΩ maximum at 4.5V / 10A. Two rows means two things to measure against, and both appear in the same sheet.
This part number also carries a clone line. VBsemi lists a NCE40H12K-VB in TO-252, and third-party cross-reference tables recycle rounded figures that do not match either row. When a listing disagrees with the PDF, the PDF with the revision number wins.
We hold the whole TO-252 ladder — 30H10K, 30H12K, 30H15K and 40H12K — with the official sheet for each. Recommending the 40V part for a 24V rail, and the 30V 15K for a 5V-driven inductive load, is the same conversation when all four are on the shelf.
Orders ship same day from Shenzhen, with volume pricing that keeps a genuine 40V TO-252 competitive against clone stock wearing the same code.
A: On paper, and only on paper. The common derating rule keeps the measured peak below 80% of the rating, and 24V is exactly 80% of 30V — so the rail alone consumes the entire margin. Any switching-node overshoot goes past it. One published 24V LLC design measured 36V of ringing at the switch node.
A: Because the two dice are from different generations, not from the same design at two voltages. Both are 120A parts with a 1.25°C/W thermal path and a ±20V gate window, but the 40V device guarantees 4.0mΩ max at 10V against the 30V part's 4.5mΩ. Voltage class is not the axis this family sorts on.
A: The maximum, and then adjust it for temperature. Typical values describe a median unit, not the one on your board, and conduction loss scales with the resistance you actually get. On this pair the typical figures are 3.5mΩ and 3.6mΩ — a ranking that reverses the moment you use the guaranteed rows instead.
A: Yes — a 4.5V row is published. 7.0mΩ max and 5.8mΩ typical, both at a 10A test current. Note that the 30V NCE30H15K publishes 5.0mΩ at the same condition, so if your driver is 5V the 30V part is the better choice, not the compromise.
A: 1080mJ at IAS = 46.5A, L = 1mH, from a 25°C junction. That sits between the 30H12K's 350mJ and the 30H15K's 1700mJ. Avalanche capability falls as avalanche current rises, so the current and inductance matter as much as the energy figure.
A: Tens of amps. The 85A row assumes a 100°C case, so the board is already shedding about 60W. Run the self-heating equation on a 40°C/W board and the realistic figure is near 19A at a 125°C junction. Treat the printed current as a die limit and the copper as the real constraint.
A: Electrically yes, mechanically yes, and you gain margin on both. Same TO-252-2L outline, same 1G/2D/3S pinout, same drain tab, same 1.25°C/W. The higher rating changes nothing about the footprint, the gate drive requirement or the thermal path.
A: Because switching times are a function of the test load, not just the die. This sheet uses RL = 1Ω and ID = 2A; the 30H12K's row uses RL = 0.75Ω and the 30H15K's uses RL = 15Ω. Compare the gate charge instead, at matched gate-drive voltage, or measure on your own board.
A: Yes — VBsemi lists a NCE40H12K-VB. Cross-reference databases also recycle rounded or third-party figures for all four parts in this family, and those numbers do not always agree with the official sheets. Verify against the PDF revision, not the listing.
A: Less Miller coupling into a slow or long gate loop. Crss is the capacitance that feeds drain dv/dt back into the gate. At 380pF this part is the lowest of the three 120A-class parts here — the 30H12K is 456pF and the 30H15K is 563pF. Combined with 17nC of gate-drain charge, it sets how much of the drain edge lands on your gate resistor.
| Image |
|
| Part Number | NCE40H12K |
| Manufacturer | NCEPower |
| Series | |
| Package/Case | |
| Packaging | TO-252 |
| Product Status | Production |
| FET Type | Industrial grade |
| Technology | Trench |
| Drain to Source Voltage (Vdss) | N |
| Current - Continuous Drain (Id) @ 25°C | 40 |
| Drive Voltage (Max Rds On, Min Rds On) | 120 |
| Rds On (Max) @ Id, Vgs | 1.8 |
| Vgs(th) (Max) @ Id | 3.6 |
| Gate Charge (Qg) (Max) @ Vgs | 4 |
| Vgs (Max) | 5.8 |
| Input Capacitance (Ciss) (Max) @ Vds | 7 |
| FET Feature | |
| Power Dissipation (Max) | |
| Operating Temperature | ±20 |
| Grade | 5400 |
| Qualification | 75 |
| Mounting Type | 130 |
| Supplier Device Package |
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