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The NCE30H15K is a 30V, 150A N-channel power MOSFET from Wuxi NCE Power in a TO-252-2L package, datasheet v1.0. It is the only 30V part in this family that publishes a 4.5V RDS(on) row — 5.0mΩ max, against 4.0mΩ max at 10V.
From what we see across Shenzhen reorders (2025–2026), the 150A step gets picked for one of two reasons: an inductive load that keeps killing weaker parts, or a spec-sheet race.
The avalanche number is where this part stops being a bigger 30H12K. EAS is 1700mJ — five times the 30H12K's 350mJ — and it is rated at a harder condition: 1mH and 58.5A, against the 12K's 0.5mH.
The sheet's arithmetic agrees. (175 − 100) / 1.15 = 65.2W, and 65.2W / 105A² = 5.9mΩ — an implied hot resistance only 1.48 times the 25°C maximum, the lowest multiplier in the family.
And the 38nC gate charge is the number worth staring at. The 30H12K specifies 79nC at the same 10V gate endpoint — this part asks for about half the charge while delivering 25% more headline current.
| Parameter | Value |
|---|---|
| Type | N-Channel Enhancement Mode Power MOSFET (trench) |
| Package | TO-252-2L (DPAK), tab = Drain |
| Drain-Source Voltage (VDS) | 30V min / 35V typ |
| Gate-Source Voltage (VGS) | ±20V |
| Continuous Drain Current (ID) | 150A @ TC = 25°C |
| Continuous Drain Current (ID) | 105A @ TC = 100°C |
| Pulsed Drain Current (IDM) | 600A |
| RDS(on) @ VGS = 10V | 4.0mΩ max (typ 3.0mΩ, ID = 20A) |
| RDS(on) @ VGS = 4.5V | 5.0mΩ max (typ 4.4mΩ, ID = 10A) |
| Gate Threshold (VGS(th)) | 1.2V min / 1.7V typ / 2.5V max |
| Forward Transconductance (gfs) | 32S min (VDS = 10V, ID = 20A) |
| Input / Output Capacitance | Ciss 5000pF / Coss 1135pF / Crss 563pF |
| Total Gate Charge (Qg) | 38nC (VDS = 15V, VGS = 10V, ID = 30A) |
| Gate-Source / Gate-Drain Charge | Qgs 9nC / Qgd 13nC |
| Switching (td(on)/tr/td(off)/tf) | 26 / 24 / 91 / 39 ns (VDD = 15V, ID = 2A, RL = 15Ω, RG = 2.5Ω) |
| Body Diode Forward Voltage (VSD) | 1.2V typ (IS = 10A) |
| Reverse Recovery (trr / Qrr) | 42ns / 39nC (IF = 40A, di/dt = 100A/µs) |
| Single-Pulse Avalanche Energy (EAS) | 1700mJ (L = 1mH, Rg = 25Ω, VDD = 20V, IAS = 58.5A, Tj = 25°C) |
| Max Power Dissipation (PD) | 130W @ TC = 25°C |
| Derating Factor | 0.87W/°C (published, not implied) |
| Thermal Resistance (RθJC) | 1.15°C/W |
| Operating Junction Temperature | −55°C to 175°C |
Two rows there are worth reading twice. The derating factor, 0.87W/°C, is printed — the 30H12K leaves you to divide by its thermal resistance instead. And the breakdown voltage gets a typical value, 35V, where the 12K publishes only the 30V minimum.
But the steepest difference is the one nobody advertises. Back-calculate each sheet's own ID(100°C) row against its own thermal resistance and 25°C maximum, and you get the hot-resistance multiplier each die actually carries:
Every one of those four numbers comes from the same kind of arithmetic on the same kind of row. The 15K is the outlier by a wide margin — its die loses less resistance on the way to temperature than any sibling, including the 40V part.
Now the avalanche budget, which is the number this part is actually bought for:
But how do you read an avalanche number against the rest of the family?
Two of the three parts publish their avalanche current. Apply EAS = ½LI² to those two and it reproduces the printed energies to within 1% — so the relation is the one NCE used, and it lets you read the third part's test current off the same curve.
The threshold window narrowed from 1.0–3.0V to 1.2–2.5V. That is a 35% tighter band, and it is the kind of thing that only shows up when you parallel devices and expect them to share current predictably.
✅ Use NCE30H15K when:
❌ Don't use NCE30H15K when:
| Model | Type | Key Difference | Best For |
|---|---|---|---|
| NCE40H12K | N-Ch 40V/120A, TO-252-2L | 4.0mΩ at 10V and 7.0mΩ at 4.5V, EAS 1080mJ at 46.5A — less rugged, more voltage, lower resistance | 24V rails and any design that would rather have headroom than avalanche margin |
| NCE30H12K | N-Ch 30V/120A, TO-252-2L | 4.5mΩ at 10V with no 4.5V row, EAS 350mJ at an implied 37.4A — a 10V-drive part only | Clamped, resistive loads where ruggedness is not on the requirement list |
| NCE30H10K | N-Ch 30V/100A, TO-252-2L | 5.5mΩ at 10V, 70A at a 100°C case, no 4.5V row — the family's entry step | Cost-driven designs at the lower current class |
| NCE0115K | N-Ch 100V/15A, TO-252-2L | Same package, one seventh of the current, three times the voltage (80mΩ at 10V) | 48V and 72V rails where voltage rating decides the part |
Which one is actually more rugged? On paper the 15K wins by five times, and the arithmetic backs it up rather than undercutting it — the 1700mJ is measured at a higher avalanche current than the 12K's, on twice the inductance.
That matters because avalanche ratings are not comparable on their own. Capability drops as avalanche current rises, so a large EAS printed at a low test current is the weaker claim. NCE tested this part at its highest current, on its longest inductance, and the curve shows it.
Relay, solenoid and contactor drive. These loads store energy in a coil and dump it when the switch opens. At 1mH and tens of amps, EAS is the row that decides whether the part survives the first power-down.
Motor phases in 24V systems. E-bike controllers and small BLDC drives see commutation spikes on every cycle. The 42ns reverse recovery and 39nC reverse recovery charge set how much of that comes back as heat rather than loss.
Battery disconnect paths with inductive parasitics. Pack wiring and protection FET layouts carry real inductance, and an interrupted current has to go somewhere. 1700mJ is the budget you are spending against it.
Low-voltage UPS and inverter stages. NCE lists uninterruptible supplies on the front page. The 600A pulse rating covers the inrush side; the 105A continuous row is what you size the copper for.
We sample-test NCE30H15K lots at both published rows: 4.0mΩ maximum at 10V and 5.0mΩ maximum at 4.5V. Having both is rare in this family, and it is the practical difference between a 5V-drive design that works and one that runs hot.
The clone line exists here too. VBsemi lists a NCE30H15K-VB in TO-252 at the same 30V and ±20V, with a threshold figure that matches the original.
Which is exactly why you verify by resistance rows rather than headline specs. A genuine part publishes both rows at their stated test currents.
We hold the whole TO-252 ladder — 30H10K, 30H12K, 30H15K and 40H12K — with the official PDF for each. Telling you that the 40V part has the lower resistance is easier when all four datasheets are on the same shelf.
Orders ship same day from Shenzhen, and volume pricing keeps a genuine 1700mJ TO-252 competitive against clone stock wearing the same code.
A: Yes, at the same gate-drive endpoint. Both sheets specify total gate charge to VGS = 10V at VDS = 15V, so the two rows are comparable; only the test current differs, 30A here against 20A there. The split sits in the plateau and above it: Qgs is 9nC on both, Qgd is 13nC against 18nC, and the charge past the plateau is 16nC against 52nC. Qgd scales with the drain voltage you switch, so re-check at your rail.
A: 1700mJ at IAS = 58.5A, L = 1mH, starting from a 25°C junction. That is the family's highest single-pulse budget and its highest test current. The sheet also prints VDD = 20V and Rg = 25Ω for the same test, so you can compare it against your own inductance directly.
A: Yes — this is the one 30V H-family part where that is a characterized answer. The 4.5V row publishes 5.0mΩ max (typ 4.4mΩ) at ID = 10A, so a 5V rail sits inside the tested envelope. Strictly 3.3V does not: the lowest characterized point is 4.5V.
A: It saves you a division and it makes the thermal claim explicit. 0.87W/°C times the 150°C span from a 25°C case lands on 130W, matching the PD row. Most sheets in this family print a thermal resistance and leave you to derive the same line; this one hands it over.
A: Yes, and the test conditions make the gap larger, not smaller. The 12K's 350mJ is rated at L = 0.5mH; applying EAS = ½LI² puts its test current near 37.4A. The 15K reaches 1700mJ at 58.5A on twice the inductance. Avalanche capability drops as avalanche current rises, so the higher energy at the higher current is the stronger claim.
A: 91ns turn-off delay and 39ns fall, at RL = 15Ω and ID = 2A. Read that condition before comparing it with another part: load resistance and test current move these numbers more than the die does. The 30H12K's 38ns turn-off delay is quoted at RL = 0.75Ω, twenty times lower.
A: Yes, with individual gate resistors. The 1.2–2.5V threshold window is tighter than the 30H12K's 1.0–3.0V, which helps current sharing. What it does not fix is avalanche: the lowest-BV die takes the current first, so the 1700mJ budget is not doubled by adding a second part.
A: Tens of amps, not 150A. The 105A row assumes a 100°C case, which means the board is already removing about 65W. Work the self-heating equation on a 40°C/W board and the realistic figure lands around 22A at a 125°C junction. Size the copper first and the current second.
A: Check that both resistance rows are present, at their stated test currents. A genuine NCE30H15K publishes 4.0mΩ at 10V/20A and 5.0mΩ at 4.5V/10A, plus the EAS row with its 1mH and 58.5A conditions. VBsemi's NCE30H15K-VB shares the 30V/±20V headline; the resistance rows and the avalanche conditions are where the difference shows.
A: It is the drain, so treat it as a live switching node. Pin 2 and the tab are the same net. Solder it to a dedicated copper pad with thermal vias into an inner plane — never to a grounded chassis or ground plane.
| Image |
|
| Part Number | NCE30H15K |
| Manufacturer | NCEPower |
| Series | |
| Package/Case | |
| Packaging | TO-252 |
| Product Status | Production |
| FET Type | Industrial grade |
| Technology | Trench |
| Drain to Source Voltage (Vdss) | N |
| Current - Continuous Drain (Id) @ 25°C | 30 |
| Drive Voltage (Max Rds On, Min Rds On) | 150 |
| Rds On (Max) @ Id, Vgs | 1.7 |
| Vgs(th) (Max) @ Id | 3 |
| Gate Charge (Qg) (Max) @ Vgs | 4 |
| Vgs (Max) | 4.4 |
| Input Capacitance (Ciss) (Max) @ Vds | 5 |
| FET Feature | |
| Power Dissipation (Max) | |
| Operating Temperature | ±20 |
| Grade | 6297 |
| Qualification | 114 |
| Mounting Type | 130 |
| Supplier Device Package |
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