NCEPower NCE30H15K

Part No.:
NCE30H15K
Manufacturer:
NCEPower
Category:
N-Channel MOSFETs
Package:
Description:
NCE30H15K — 30V/150A N-Channel Power MOSFET (TO-252-2L)The NCE30H15K is a 30V, 150A N-channel power MOSFET from Wuxi NCE Power in a TO-252-2L package, datasheet v1.0. It is the only 30V part in this family that publishes a 4.5V RDS(on) row — 5.…
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NCE30H15K Information

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Product attributes
Attribute value
Manufacturer:
NCEPower
Series:
Package/Case:
Packaging:
TO-252
Product Status:
Production
FET Type:
Industrial grade
Technology:
Trench
Drain to Source Voltage (Vdss):
N
Current - Continuous Drain (Id) @ 25°C:
30
Drive Voltage (Max Rds On, Min Rds On):
150
Rds On (Max) @ Id, Vgs:
1.7
Vgs(th) (Max) @ Id:
3
Gate Charge (Qg) (Max) @ Vgs:
4
Vgs (Max):
4.4
Input Capacitance (Ciss) (Max) @ Vds:
5
FET Feature:
Power Dissipation (Max):
Operating Temperature:
±20
Grade:
6297
Qualification:
114
Mounting Type:
130
Supplier Device Package:

NCE30H15K — 30V/150A N-Channel Power MOSFET (TO-252-2L)

The NCE30H15K is a 30V, 150A N-channel power MOSFET from Wuxi NCE Power in a TO-252-2L package, datasheet v1.0. It is the only 30V part in this family that publishes a 4.5V RDS(on) row — 5.0mΩ max, against 4.0mΩ max at 10V.

From what we see across Shenzhen reorders (2025–2026), the 150A step gets picked for one of two reasons: an inductive load that keeps killing weaker parts, or a spec-sheet race.

The avalanche number is where this part stops being a bigger 30H12K. EAS is 1700mJ — five times the 30H12K's 350mJ — and it is rated at a harder condition: 1mH and 58.5A, against the 12K's 0.5mH.

The sheet's arithmetic agrees. (175 − 100) / 1.15 = 65.2W, and 65.2W / 105A² = 5.9mΩ — an implied hot resistance only 1.48 times the 25°C maximum, the lowest multiplier in the family.

And the 38nC gate charge is the number worth staring at. The 30H12K specifies 79nC at the same 10V gate endpoint — this part asks for about half the charge while delivering 25% more headline current.

What Are the Technical Specifications of NCE30H15K?

ParameterValue
TypeN-Channel Enhancement Mode Power MOSFET (trench)
PackageTO-252-2L (DPAK), tab = Drain
Drain-Source Voltage (VDS)30V min / 35V typ
Gate-Source Voltage (VGS)±20V
Continuous Drain Current (ID)150A @ TC = 25°C
Continuous Drain Current (ID)105A @ TC = 100°C
Pulsed Drain Current (IDM)600A
RDS(on) @ VGS = 10V4.0mΩ max (typ 3.0mΩ, ID = 20A)
RDS(on) @ VGS = 4.5V5.0mΩ max (typ 4.4mΩ, ID = 10A)
Gate Threshold (VGS(th))1.2V min / 1.7V typ / 2.5V max
Forward Transconductance (gfs)32S min (VDS = 10V, ID = 20A)
Input / Output CapacitanceCiss 5000pF / Coss 1135pF / Crss 563pF
Total Gate Charge (Qg)38nC (VDS = 15V, VGS = 10V, ID = 30A)
Gate-Source / Gate-Drain ChargeQgs 9nC / Qgd 13nC
Switching (td(on)/tr/td(off)/tf)26 / 24 / 91 / 39 ns (VDD = 15V, ID = 2A, RL = 15Ω, RG = 2.5Ω)
Body Diode Forward Voltage (VSD)1.2V typ (IS = 10A)
Reverse Recovery (trr / Qrr)42ns / 39nC (IF = 40A, di/dt = 100A/µs)
Single-Pulse Avalanche Energy (EAS)1700mJ (L = 1mH, Rg = 25Ω, VDD = 20V, IAS = 58.5A, Tj = 25°C)
Max Power Dissipation (PD)130W @ TC = 25°C
Derating Factor0.87W/°C (published, not implied)
Thermal Resistance (RθJC)1.15°C/W
Operating Junction Temperature−55°C to 175°C

Two rows there are worth reading twice. The derating factor, 0.87W/°C, is printed — the 30H12K leaves you to divide by its thermal resistance instead. And the breakdown voltage gets a typical value, 35V, where the 12K publishes only the 30V minimum.

But the steepest difference is the one nobody advertises. Back-calculate each sheet's own ID(100°C) row against its own thermal resistance and 25°C maximum, and you get the hot-resistance multiplier each die actually carries:

NCE40H12K — implied 8.3mΩ hot vs 4.0mΩ cold2.08×
NCE30H10K — implied 11.3mΩ vs 5.5mΩ2.04×
NCE30H12K — implied 8.5mΩ vs 4.5mΩ1.89×
NCE30H15K — implied 5.9mΩ vs 4.0mΩ1.48×

Every one of those four numbers comes from the same kind of arithmetic on the same kind of row. The 15K is the outlier by a wide margin — its die loses less resistance on the way to temperature than any sibling, including the 40V part.

Now the avalanche budget, which is the number this part is actually bought for:

Avalanche test current, A E_AS, mJ 0 500 1000 1500 0 20 40 60 30H15K 40H12K 30H12K — 350mJ L = 1 mH L = 0.5 mH E = 0.5 x L x I squared

But how do you read an avalanche number against the rest of the family?

Two of the three parts publish their avalanche current. Apply EAS = ½LI² to those two and it reproduces the printed energies to within 1% — so the relation is the one NCE used, and it lets you read the third part's test current off the same curve.

NCE30H12K — window 2.0V NCE30H15K — window 1.3V 0 1.0 2.0 3.0 typ 1.6V typ 1.7V Gate threshold voltage, V

The threshold window narrowed from 1.0–3.0V to 1.2–2.5V. That is a 35% tighter band, and it is the kind of thing that only shows up when you parallel devices and expect them to share current predictably.

When Should You Use (and NOT Use) the NCE30H15K?

✅ Use NCE30H15K when:

  • Your load is inductive and unclamped. Relays, solenoids and contactor coils dump their energy into this die at turn-off. 1700mJ is the family's ruggedness budget and the 15K is where it lives.
  • Your gate driver stops at 4.5V or 5V. This is the only 30V H-family part with a published 4.5V row — 5.0mΩ max at a 10A test current. Nothing below 4.5V is characterized.
  • You need burst current, not average current. 600A pulsed against 105A at a 100°C case — a five-to-one ratio that suits contactor and pre-charge duty.
  • You're stepping up from the 30H10K or 30H12K. Same footprint, same 1G/2D/3S pinout and same drain tab, so the change is a reflow, not a re-layout.
  • Thermal headroom is tight. RθJC of 1.15°C/W is the lowest in the 30V family, and it is the one row that does not depend on your board copper.

❌ Don't use NCE30H15K when:

  • Your drive is 3.3V. The 4.5V row is the floor of what is characterized. Below it you are guessing at the resistance, and the temperature rise becomes your problem.
  • You don't need avalanche ruggedness. If the load is purely resistive and clamped, you are paying for a die feature you never use — the 30H12K covers the same 10V-drive job.
  • You want 150A continuous on a normal board. The 105A row already assumes a 100°C case, which means removing 65W through copper alone. Tens of amps is the realistic band.
  • Your rail is above 30V. Move to the 40H12K, which also publishes a 4.5V row and a lower on-resistance.
  • You're paralleling parts with one shared gate resistor. A 1.3V threshold window is tight, but gates still oscillate against each other. Give each device its own gate resistor.

What Are the Alternatives to NCE30H15K?

ModelTypeKey DifferenceBest For
NCE40H12KN-Ch 40V/120A, TO-252-2L4.0mΩ at 10V and 7.0mΩ at 4.5V, EAS 1080mJ at 46.5A — less rugged, more voltage, lower resistance24V rails and any design that would rather have headroom than avalanche margin
NCE30H12KN-Ch 30V/120A, TO-252-2L4.5mΩ at 10V with no 4.5V row, EAS 350mJ at an implied 37.4A — a 10V-drive part onlyClamped, resistive loads where ruggedness is not on the requirement list
NCE30H10KN-Ch 30V/100A, TO-252-2L5.5mΩ at 10V, 70A at a 100°C case, no 4.5V row — the family's entry stepCost-driven designs at the lower current class
NCE0115KN-Ch 100V/15A, TO-252-2LSame package, one seventh of the current, three times the voltage (80mΩ at 10V)48V and 72V rails where voltage rating decides the part

Which one is actually more rugged? On paper the 15K wins by five times, and the arithmetic backs it up rather than undercutting it — the 1700mJ is measured at a higher avalanche current than the 12K's, on twice the inductance.

That matters because avalanche ratings are not comparable on their own. Capability drops as avalanche current rises, so a large EAS printed at a low test current is the weaker claim. NCE tested this part at its highest current, on its longest inductance, and the curve shows it.

What Are the Typical Applications of NCE30H15K?

Relay, solenoid and contactor drive. These loads store energy in a coil and dump it when the switch opens. At 1mH and tens of amps, EAS is the row that decides whether the part survives the first power-down.

Motor phases in 24V systems. E-bike controllers and small BLDC drives see commutation spikes on every cycle. The 42ns reverse recovery and 39nC reverse recovery charge set how much of that comes back as heat rather than loss.

Battery disconnect paths with inductive parasitics. Pack wiring and protection FET layouts carry real inductance, and an interrupted current has to go somewhere. 1700mJ is the budget you are spending against it.

Low-voltage UPS and inverter stages. NCE lists uninterruptible supplies on the front page. The 600A pulse rating covers the inrush side; the 105A continuous row is what you size the copper for.

Why Buy NCE30H15K from ICMASS?

We sample-test NCE30H15K lots at both published rows: 4.0mΩ maximum at 10V and 5.0mΩ maximum at 4.5V. Having both is rare in this family, and it is the practical difference between a 5V-drive design that works and one that runs hot.

The clone line exists here too. VBsemi lists a NCE30H15K-VB in TO-252 at the same 30V and ±20V, with a threshold figure that matches the original.

Which is exactly why you verify by resistance rows rather than headline specs. A genuine part publishes both rows at their stated test currents.

We hold the whole TO-252 ladder — 30H10K, 30H12K, 30H15K and 40H12K — with the official PDF for each. Telling you that the 40V part has the lower resistance is easier when all four datasheets are on the same shelf.

Orders ship same day from Shenzhen, and volume pricing keeps a genuine 1700mJ TO-252 competitive against clone stock wearing the same code.

Frequently Asked Questions About NCE30H15K

Q1: Is the 38nC gate charge really half the 30H12K's 79nC?

A: Yes, at the same gate-drive endpoint. Both sheets specify total gate charge to VGS = 10V at VDS = 15V, so the two rows are comparable; only the test current differs, 30A here against 20A there. The split sits in the plateau and above it: Qgs is 9nC on both, Qgd is 13nC against 18nC, and the charge past the plateau is 16nC against 52nC. Qgd scales with the drain voltage you switch, so re-check at your rail.

Q2: What is the NCE30H15K's avalanche rating at?

A: 1700mJ at IAS = 58.5A, L = 1mH, starting from a 25°C junction. That is the family's highest single-pulse budget and its highest test current. The sheet also prints VDD = 20V and Rg = 25Ω for the same test, so you can compare it against your own inductance directly.

Q3: Can I drive the gate from a 5V logic rail?

A: Yes — this is the one 30V H-family part where that is a characterized answer. The 4.5V row publishes 5.0mΩ max (typ 4.4mΩ) at ID = 10A, so a 5V rail sits inside the tested envelope. Strictly 3.3V does not: the lowest characterized point is 4.5V.

Q4: Why does the sheet give a derating factor?

A: It saves you a division and it makes the thermal claim explicit. 0.87W/°C times the 150°C span from a 25°C case lands on 130W, matching the PD row. Most sheets in this family print a thermal resistance and leave you to derive the same line; this one hands it over.

Q5: Is 1700mJ five times more rugged than the 30H12K?

A: Yes, and the test conditions make the gap larger, not smaller. The 12K's 350mJ is rated at L = 0.5mH; applying EAS = ½LI² puts its test current near 37.4A. The 15K reaches 1700mJ at 58.5A on twice the inductance. Avalanche capability drops as avalanche current rises, so the higher energy at the higher current is the stronger claim.

Q6: What is the switching speed at 10V of gate drive?

A: 91ns turn-off delay and 39ns fall, at RL = 15Ω and ID = 2A. Read that condition before comparing it with another part: load resistance and test current move these numbers more than the die does. The 30H12K's 38ns turn-off delay is quoted at RL = 0.75Ω, twenty times lower.

Q7: Can I parallel two NCE30H15K for higher current?

A: Yes, with individual gate resistors. The 1.2–2.5V threshold window is tighter than the 30H12K's 1.0–3.0V, which helps current sharing. What it does not fix is avalanche: the lowest-BV die takes the current first, so the 1700mJ budget is not doubled by adding a second part.

Q8: What current can it carry continuously on a normal PCB?

A: Tens of amps, not 150A. The 105A row assumes a 100°C case, which means the board is already removing about 65W. Work the self-heating equation on a 40°C/W board and the realistic figure lands around 22A at a 125°C junction. Size the copper first and the current second.

Q9: How do I tell a genuine part from a clone?

A: Check that both resistance rows are present, at their stated test currents. A genuine NCE30H15K publishes 4.0mΩ at 10V/20A and 5.0mΩ at 4.5V/10A, plus the EAS row with its 1mH and 58.5A conditions. VBsemi's NCE30H15K-VB shares the 30V/±20V headline; the resistance rows and the avalanche conditions are where the difference shows.

Q10: Does the tab need any special handling?

A: It is the drain, so treat it as a live switching node. Pin 2 and the tab are the same net. Solder it to a dedicated copper pad with thermal vias into an inner plane — never to a grounded chassis or ground plane.

Image NCE30H15K
Part Number NCE30H15K
Manufacturer NCEPower
Series
Package/Case
Packaging TO-252
Product Status Production
FET Type Industrial grade
Technology Trench
Drain to Source Voltage (Vdss) N
Current - Continuous Drain (Id) @ 25°C 30
Drive Voltage (Max Rds On, Min Rds On) 150
Rds On (Max) @ Id, Vgs 1.7
Vgs(th) (Max) @ Id 3
Gate Charge (Qg) (Max) @ Vgs 4
Vgs (Max) 4.4
Input Capacitance (Ciss) (Max) @ Vds 5
FET Feature
Power Dissipation (Max)
Operating Temperature ±20
Grade 6297
Qualification 114
Mounting Type 130
Supplier Device Package
  • NCE30H15K
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  • NCE30H15K Specifications
  • NCE30H15K Images
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