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The NCE3010S is a 30V/10A trench N-Channel MOSFET in SOP-8 — 12mΩ max at 10V, 16mΩ max at 4.5V, 32.5nC gate charge, from Wuxi NCE Power.
From what we see across Shenzhen lots (2025–2026), 30V SOP-8 parts like this ship mostly into cordless tool boards, appliance load switches, small inverters, and LED drivers — the class that the AO4496/FDS6690-era sockets used to own.
The number that gets quoted wrong: 10A. Per the datasheet (V4.0), that's a TC = 25°C rating. It derates to 7A at 100°C, and the SOP-8 envelope is 2.5W — with the fine print that the 50°C/W thermal number is measured for t ≤ 10 seconds on FR4.
The spec that doesn't get quoted enough: the 4.5V row exists, but it's tested at 5A, not 10A. This is a 5V-logic part. Gate threshold runs up to 3V, so a 3.3V GPIO sits outside the guaranteed window — plan 5V drive.
| Parameter | Value |
|---|---|
| Type | N-Channel Enhancement Mode Power MOSFET (Trench) |
| Package | SOP-8 (SOIC-8, 150 mil) |
| Drain-Source Voltage (VDS) | 30V |
| Gate-Source Voltage (VGS) | ±20V |
| Continuous Drain Current (ID) | 10A @ TC = 25°C |
| Continuous Drain Current (ID) | 7A @ TC = 100°C |
| Pulsed Drain Current (IDM) | 50A |
| On-Resistance RDS(on) @ 10V | 8mΩ typ / 12mΩ max (ID = 10A) |
| On-Resistance RDS(on) @ 4.5V | 11mΩ typ / 16mΩ max (ID = 5A) |
| Gate Threshold Voltage (VGS(th)) | 1V to 3V (typ 1.6V) |
| Max Power Dissipation (PD) | 2.5W |
| Thermal Resistance RθJA | 50°C/W (FR4, surface mounted, t ≤ 10s) |
| Total Gate Charge (Qg) | 32.5nC @ 10V (Qgs 5nC / Qgd 6nC) |
| Input Capacitance (Ciss) | 1550pF (1100–2100pF, VDS = 15V) |
| Output Capacitance (Coss) | 300pF (VDS = 15V) |
| Switching Times | td(on) 30ns / tr 20ns / td(off) 100ns / tf 80ns |
| Body Diode Forward Voltage (VSD) | 1.2V max (IS = 10A) |
| Operating Junction Temperature | -55°C to +150°C |
| Avalanche | Fully characterized (no numeric EAS published) |
Key numbers that matter: per the NCE3010S datasheet (V4.0), RDS(on) is guaranteed at two gate voltages — 12mΩ max at 10V/10A and 16mΩ max at 4.5V/5A. The 4.5V test current is half the 10V test current, which tells you where the die's saturation curve sits.
Why does the 2.5W envelope matter? 2.5W at 50°C/W puts the junction at 150°C in a 25°C room — and that 50°C/W is the 10-second number. Real boards run 80–125°C/W steady-state, so the honest continuous budget is closer to 1W than 2.5W.
The avalanche note is honest: the datasheet says "fully characterized avalanche voltage and current" but publishes no numeric EAS. Treat it as a margin, not a spec — for inductive loads, keep the freewheeling clamp path.
✅ Use NCE3010S when:
❌ Don't use NCE3010S when:
| Model | Type | Key Difference | Best For |
|---|---|---|---|
| NCE3015S | N-Ch, SOP-8 | 30V/15A, same family, one step up | Headroom without a redesign |
| NCE3018AS | N-Ch, SOP-8 | 30V/18A, 7mΩ max @10V, 10mΩ @4.5V | The low-RDS(on) top of the family |
| AO4496 | N-Ch, SO-8 | 30V/10A class (AOS), the legacy socket | Drop-in cross-reference checks |
| FDS6690 | N-Ch, SO-8 | 30V/10A class, 10mΩ-class (onsemi legacy) | Legacy BOM second-source |
| BSC103N03LSG | N-Ch, SuperSO8 | ~10mΩ (Infineon), but leadless 5×6 package | Performance, with a re-layout |
| 40V/60V class | N-Ch, SOP-8 | NCE6008AS-family, same pinout | Raw 24V rails and hot-swap |
The 30V SOP-8 decision in one line: the 3010S sits at the 10A entry point of the NCE 30V family — the 3015S and 3018AS are the same package and pinout with bigger dies, and the drop-in check is the RDS(on) number at your actual gate voltage.
Here's the thing to check before substitution: the gate-drive row. A part that only specifies 10V (like the 60V NCE6008AS) is not a drop-in for a 4.5V-specified socket — the 3010S is, because its 4.5V row matches the legacy logic-level parts.
From what we see in Shenzhen (2025–2026), 30V SO-8 sockets that started on AO4496 or FDS6690 migrate to domestic parts like this for cost.
The migration fails most often when the new part is driven at the old part's gate voltage without checking the RDS(on) row. Same pinout, different guarantee.
SOP-8 pinout: pins 1–3 Source, pin 4 Gate, pins 5–8 Drain — the standard single-MOSFET arrangement shared across the whole SO-8 class, including the AO4496/FDS6690 legacy sockets and the NCE3015S/3018AS family steps.
12V low-side switch with 5V logic: the MCU GPIO drives the gate through RG; the 10k pull-down keeps the gate off during power-up when the MCU is still unconfigured.
Source pins 1–3 tie to ground, drain pins 5–8 to the load. The clamp diode across the load absorbs the inductive kick when a relay or solenoid opens.
NCE3010S RDS(on) max at the two guaranteed drive points (datasheet V4.0):
The 4.5V row is what makes this a 5V-logic part. A 3.3V rail is not a guarantee point — it sits below the 4.5V specification and inside the VGS(th) range.
Conduction loss at 12mΩ max — calculated from the datasheet, not measured:
Even at 10A, conduction loss alone eats half the 2.5W envelope — before switching loss and before the steady-state thermal reality (the 50°C/W number is a 10-second rating).
5V-logic low-side switching in appliances: A 5V MCU rail switches a 12V relay or fan through the 3010S — the 4.5V guarantee is the whole point, and conduction loss at 1-2A is under 50mW.
20V-max cordless tool and appliance boards: The workhorse low-side switch in compact SMD power stages (2025–2026 Shenzhen market). 5S tool packs charge to 21V — well inside the 30V rating with the body diode handling the commutating path.
UPS power-switching sections: The datasheet lists UPS as a target application. 32.5nC gate charge and 100ns max turn-off delay keep the drive stage simple on inverter boards.
Battery protection and load-switch paths: Low on-resistance keeps the voltage drop small on the discharge path; the 50A pulse rating covers short-circuit and hot-plug transients inside the SO-8 lead frame's limits.
LED driver and solar-bank switching stages: Constant-current stages switching at tens of kHz use the 3010S as the switch element — cheap, stocked everywhere, and the 4.5V row works with the 5V control rails those boards carry.
Every lot tested at both drive points. We batch-test RDS(on) at 10V and 4.5V against the datasheet maxes before shipping. A remarked part from a smaller die fails the 4.5V/5A check by 1.5-2× — the fastest way to catch counterfeits in this class.
Cross-reference support for the whole 30V family. Not sure whether your board wants the 3010S, the 3015S, or the 3018AS? Send us load current, gate drive voltage, and board copper — we'll tell you which die your design actually needs.
Legacy-socket migration help. Replacing an AO4496 or FDS6690 socket? Tell us the old part number and we'll confirm the RDS(on) row matches at your drive voltage before you commit a BOM.
Same-day dispatch, 5-10 days worldwide. Orders before 15:00 CST ship same day via DHL or FedEx. For volume orders, we source directly from the NCE factory line.
A: Only with the PCB copper to move the heat. The datasheet derates to 7A at 100°C, and the package is rated 2.5W with a 50°C/W thermal number measured for 10 seconds. At 10A and 12mΩ the conduction loss alone is 1.2W. With ≥100mm² drain copper and thermal vias, the honest continuous envelope is 5-7A depending on ambient.
A: It's a 4.5V-specified part — a 5V-logic MOSFET, not a 3.3V one. RDS(on) is guaranteed at 4.5V and 10V only, and VGS(th) runs to 3V max. Engineering guidance from the Arduino forums and TME is consistent: don't run a 4.5V-specified part from a 3.3V rail and expect the rated RDS(on). For 3.3V systems, pick a part specified at 2.5V or lower, or add a gate driver.
A: Yes — same SO-8 pinout and same 30V/10A class, with one check. Pins 1-3 Source, pin 4 Gate, pins 5-8 Drain match. Verify the RDS(on) guarantee at your actual gate drive: the 3010S specifies 12mΩ max at 10V and 16mΩ max at 4.5V, which covers what those legacy sockets promised.
A: Because before full saturation, on-resistance rises with current. The datasheet's 4.5V row is measured at ID = 5A, and the RDS vs drain-current curve shows why: below the full 10V gate drive the die isn't fully enhanced, so RDS at 10A/4.5V will read higher than the 16mΩ max. Design at 4.5V for loads near 5A, or drive at 10V for the full 10A.
A: Work the numbers from the datasheet max. 5A at 12mΩ is 0.3W — a 15°C rise at the 50°C/W number. 8A is 0.77W, a 38°C rise. But the 50°C/W is a 10-second rating: steady-state SO-8 thermal resistance on a typical board lands higher (Fairchild's AN-1032 puts minimal-copper SO-8 near 125°C/W). Big drain copper and vias are what make 8A survivable.
A: Yes, with equal gate traces and shared drain copper. Keep the two parts on the same copper pour so current shares by temperature, and keep gate traces equal length so they switch together. Parallel pairs are the standard way to push an SO-8-class design past one part's envelope without changing package.
A: Into the hundreds of kHz with a real driver. td(off) is 100ns and Qg is 32.5nC — numbers a TC4420-class driver handles easily. Driven straight from a 5V MCU GPIO (a few mA of pull capability), stay in the tens of kHz. The gate charge and input capacitance decide, not the current rating.
A: Only for clean, tightly-regulated 24V rails. A 24V lead-acid battery floats at 27.6-28.8V — under 1.2V of headroom for switching spikes at 30V. For raw battery rails or inductive loads, step to the 40V/60V SOP-8 class. For 12V systems (14.4V float) 30V is comfortable with margin.
A: Measure RDS(on) at both drive points. A genuine part reads within the 12mΩ (10V/10A) and 16mΩ (4.5V/5A) maxes. Remarked parts from smaller dies typically fail the 4.5V check by 1.5-2×. Check the marking reads NCE3010 and confirm a true 150-mil SO-8 body — not a smaller die glued into the frame.
A: Cordless tool boards, appliance load switches, small inverters, and UPS sections. From what we see in Shenzhen (2025–2026), the 30V/10A SO-8 class is a volume socket — the parts go into compact SMD power stages where the old AO4496/FDS6690-era designs used to sit, at roughly a quarter of the import price.
| Image |
|
| Part Number | NCE3010S |
| Manufacturer | NCEPower |
| Series | |
| Package/Case | |
| Packaging | SOP-8 |
| Product Status | Production |
| FET Type | Industrial grade |
| Technology | Trench |
| Drain to Source Voltage (Vdss) | N |
| Current - Continuous Drain (Id) @ 25°C | 30 |
| Drive Voltage (Max Rds On, Min Rds On) | 10 |
| Rds On (Max) @ Id, Vgs | 1.6 |
| Vgs(th) (Max) @ Id | 8 |
| Gate Charge (Qg) (Max) @ Vgs | 12 |
| Vgs (Max) | 11 |
| Input Capacitance (Ciss) (Max) @ Vds | 16 |
| FET Feature | |
| Power Dissipation (Max) | |
| Operating Temperature | ±20 |
| Grade | 1550 |
| Qualification | 13 |
| Mounting Type | 2.5 |
| Supplier Device Package |
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