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The NCE2302 is an N-channel enhancement mode power MOSFET from Wuxi NCE Power, built on trench gate technology. It delivers 20V drain-source rating with 2.9A continuous drain current in a SOT-23 package. The standout spec: total gate charge of just 4.0nC — half that of most MOSFETs in this current class. Combined with input capacitance of only 300pF, this part switches faster and with less drive current than almost anything else in SOT-23.
At RDS(on) of 33mΩ typical at 4.5V, the NCE2302 runs efficiently at its rated 2.9A. The 0.75V typical VGS(th) means 3.3V logic drives it directly. Think of this as the entry-level logic-level MOSFET in the NCE SOT-23 family: smaller than the NCE3400 (30V/5.8A), faster switching, and about the same price. If you're switching under 3A from 5V or below, the NCE2302 is the most cost-effective N-channel option in the NCE lineup.
| Parameter | Value |
|---|---|
| Type | N-Channel Enhancement Mode Power MOSFET |
| Package | SOT-23-3L (surface mount) |
| Drain-Source Voltage (VDSS) | 20V |
| Gate-Source Voltage (VGSS) | ±12V |
| Continuous Drain Current (ID) | 2.9A @ 25°C |
| Pulsed Drain Current (IDM) | 10A (10µs pulse) |
| Power Dissipation (PD) | 1.0W @ 25°C |
| Gate Threshold Voltage (VGS(th)) | 0.75V typ / 1.2V max @ 250µA |
| RDS(on) @ VGS=4.5V | 33mΩ typ / 40mΩ max |
| RDS(on) @ VGS=2.5V | 40mΩ typ / 60mΩ max |
| Total Gate Charge (QG) | 4.0nC @ VGS=4.5V |
| Input Capacitance (CISS) | 300pF @ VDS=10V |
| Reverse Transfer Capacitance (CRSS) | ~80pF |
| Turn-on Delay / Rise Time | 10ns / 50ns |
| Body Diode VF | 0.75V typ @ 2.9A |
| Operating Temperature | -55°C to +150°C |
| Manufacturer | Wuxi NCE Power Semiconductor |
RDS(on) at each gate drive level. At 33mΩ typical at 4.5V, the NCE2302 competes with MOSFETs rated for double the current. The key trade-off: 20V VDS max means this is strictly for 5V-and-below designs.
Bar width = typical RDS(on) relative to 40mΩ. The gap between typical and max is narrow — this is a mature, well-characterized part with tight process control.
Why the NCE2302 punches above its weight class. The 4.0nC gate charge and 300pF input capacitance mean this part switches with almost no drive current. Compare to similar MOSFETs in its class — the NCE2302 needs half the gate drive energy of a typical 20V SOT-23 MOSFET.
The NCE2302 has one of the lowest VGS(th) in its class (0.75V typ). 3.3V GPIOs drive it with margin to spare. The ±12V VGS max is the same constraint as the rest of the NCE family: don't drive the gate from 12V without a clamp.
✅ Use NCE2302 when:
❌ Don't use NCE2302 when:
| Model | Type | Key Difference | Best For |
|---|---|---|---|
| NCE3400 | N-Ch Trench MOSFET | 30V/5.8A, RDS(on) 24mΩ, QG 10nC, SOT-23 | Step-up: higher voltage, higher current |
| SI2302DS | N-Ch Trench MOSFET | 20V/2.8A, RDS(on) ~45mΩ, QG ~5nC | Near-equivalent, slightly worse specs |
| BSS138 | N-Ch MOSFET | 50V/200mA, RDS(on) ~3.5Ω, ±20V VGS | Higher voltage, signal-level only |
| 2N7002-TP | N-Ch MOSFET | 60V/115mA, RDS(on) ~5Ω | HV switching, very low current |
| NCE2305 | P-Ch Trench MOSFET | -20V/-4.1A, RDS(on) 52mΩ, SOT-23 | P-channel complement for high-side switching |
The NCE SOT-23 family: three parts, three jobs.
The NCE2302 is the speed king of the family — less than half the gate charge of the NCE3400. For high-frequency PWM applications, this is the one you want. The trade-off: lower voltage rating and higher RDS(on).
The NCE2302's 4.0nC gate charge makes it ideal for PWM dimming at several kHz. A 3.3V MCU GPIO delivering 5mA charges the gate in under 1µs — no gate driver IC needed. At 1A LED current with 40mΩ RDS(on), the FET drops just 40mV, keeping the LED current sense resistor the dominant voltage drop in the path.
For small DC motor PWM (sub-2A), the NCE2302 is the go-to low-side switch. At 20kHz PWM — typical for motor control — the rise/fall times are under 100ns. Switching loss is negligible compared to conduction loss at this frequency. Add a flyback diode across the motor and you have a complete motor driver in four components.
Battery Protection (1S, sub-3A). Same topology as NCE3400 but scaled down. The NCE2302 sits between BAT− and P−. At 2A load and 40mΩ, voltage drop is 80mV. The 20V VDS rating is sufficient for single-cell. If you're building a 1S protection board for a sub-$10 product, the NCE2302 saves a fraction of a cent per unit over the NCE3400 — and at volume, fractions of a cent add up.
Full batch traceability. We verify date codes and lot numbers against NCE Power factory records. The NCE2302's 20V VDS rating makes it vulnerable to ESD and overvoltage damage during handling — we test incoming lots for gate leakage and VGS(th) shift before they enter inventory.
NCE SOT-23 family in one shipment. The NCE2302 is usually one of several MOSFETs on a BOM — alongside the NCE3400 for higher-current paths and the NCE2305 for high-side switching. We stock all three. One order, one shipment, one invoice.
Shenzhen stock, same-day dispatch before 15:00 CST. DHL/FedEx to North America and Europe in 5–10 days. Contact us for current pricing on your quantity — volume pricing typically ranges from $0.015–$0.04/unit depending on order size.
A: Pay it when you need >20V, >2A, or the lowest RDS(on). The NCE3400 gives you 30V VDS (vs 20V), 5.8A (vs 2.9A), and 24mΩ (vs 33mΩ). For 5V/2A designs, the NCE2302 is adequate and cheaper. For anything that might ever see a voltage transient above 20V, or any current above 2A continuous, the NCE3400's extra margin is worth the few cents. If you're unsure, default to the NCE3400 — the BOM cost difference is smaller than the cost of a field failure.
A: Yes, and this is where it shines. With 4.0nC gate charge and 300pF input capacitance, a 10mA gate driver charges the gate in ~400ns. At 500kHz (2µs period), turn-on and turn-off transitions occupy about 40% of the period — you'll see switching loss, but it's manageable with good layout. Compare to the NCE3400 (10nC): at 500kHz, switching loss dominates and the part runs hot. If you're pushing PWM above 200kHz, the NCE2302 is the best choice in the NCE SOT-23 lineup.
A: 2A comfortably, 2.9A with good thermal design. At 2A, worst-case RDS(on) of 60mΩ (at 2.5V drive) gives 240mW — about 30°C rise above ambient with typical SOT-23 PCB copper. At 2.9A, worst-case dissipation jumps to 500mW — about 63°C rise. The part will survive but your PCB won't love it. For anything above 2A continuous, the NCE3400 is the safer bet.
A: The standard datasheet does not specify EAS. The 20V VDS rating leaves little headroom for inductive kickback anyway. If your application switches inductive loads, add external clamping or choose an avalanche-rated part.
A: Smaller die area. The NCE2302 is rated for 2.9A — about half the NCE3400's 5.8A. The silicon die is physically smaller, which means less gate capacitance. The 20V rating also allows a thinner gate oxide than a 30V part. Smaller die + lower voltage rating = lower QG. It's not magic, it's physics — and it's the reason this part is so good at high-frequency switching.
A: No — 7.4V nominal means 8.4V fully charged, and transients can push past 10V. While 10V is still under the 20V VDS rating, a 2S pack with charger transients and load dump can easily exceed 20V for microseconds. For 2S and above, use the NCE3400 (30V) or a dedicated battery protection IC. The NCE2302 is strictly for single-cell and 5V-rail applications.
A: Only if it's already in your BOM or significantly cheaper. Spec-wise, the NCE2302 has lower RDS(on) (33mΩ vs ~45mΩ), lower gate charge (4.0nC vs ~5nC), and nearly identical voltage/current ratings. The NCE2302 is the objectively better part. The SI2302DS is ubiquitous and well-characterized, which matters in some regulated industries, but for new designs there's no technical reason to choose it over the NCE2302.
A: Yes — but a small one. With only 300pF input capacitance, the NCE2302 turns on extremely fast even with a weak gate driver. That sharp edge radiates. A 10–47Ω series gate resistor slows the edge just enough to pass EMI without noticeably impacting efficiency below 300kHz. At 500kHz+, keep it at 10Ω or less.
| Image |
|
| Part Number | NCE2302 |
| Manufacturer | NCEPower |
| Series | |
| Package/Case | |
| Packaging | SOT-23 |
| Product Status | Production |
| FET Type | Industrial grade |
| Technology | Trench |
| Drain to Source Voltage (Vdss) | N |
| Current - Continuous Drain (Id) @ 25°C | 20 |
| Drive Voltage (Max Rds On, Min Rds On) | 4 |
| Rds On (Max) @ Id, Vgs | 0.9 |
| Vgs(th) (Max) @ Id | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Vgs (Max) | 30 |
| Input Capacitance (Ciss) (Max) @ Vds | 45 |
| FET Feature | 37 |
| Power Dissipation (Max) | 59 |
| Operating Temperature | ±12 |
| Grade | 300 |
| Qualification | 4 |
| Mounting Type | 1 |
| Supplier Device Package |
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