NCEPower NCE2302

Part No.:
NCE2302
Manufacturer:
NCEPower
Category:
N-Channel MOSFETs
Package:
Description:
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NCE2302 Information

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  • Product Details
  • Comparison
  • Tags
Product attributes
Attribute value
Manufacturer:
NCEPower
Series:
Package/Case:
Packaging:
SOT-23
Product Status:
Production
FET Type:
Industrial grade
Technology:
Trench
Drain to Source Voltage (Vdss):
N
Current - Continuous Drain (Id) @ 25°C:
20
Drive Voltage (Max Rds On, Min Rds On):
4
Rds On (Max) @ Id, Vgs:
0.9
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Vgs (Max):
30
Input Capacitance (Ciss) (Max) @ Vds:
45
FET Feature:
37
Power Dissipation (Max):
59
Operating Temperature:
±12
Grade:
300
Qualification:
4
Mounting Type:
1
Supplier Device Package:

NCE2302 — N-Channel 20V/2.9A Enhancement Mode Power MOSFET (SOT-23)

The NCE2302 is an N-channel enhancement mode power MOSFET from Wuxi NCE Power, built on trench gate technology. It delivers 20V drain-source rating with 2.9A continuous drain current in a SOT-23 package. The standout spec: total gate charge of just 4.0nC — half that of most MOSFETs in this current class. Combined with input capacitance of only 300pF, this part switches faster and with less drive current than almost anything else in SOT-23.

At RDS(on) of 33mΩ typical at 4.5V, the NCE2302 runs efficiently at its rated 2.9A. The 0.75V typical VGS(th) means 3.3V logic drives it directly. Think of this as the entry-level logic-level MOSFET in the NCE SOT-23 family: smaller than the NCE3400 (30V/5.8A), faster switching, and about the same price. If you're switching under 3A from 5V or below, the NCE2302 is the most cost-effective N-channel option in the NCE lineup.

What Are the Technical Specifications of NCE2302?

ParameterValue
TypeN-Channel Enhancement Mode Power MOSFET
PackageSOT-23-3L (surface mount)
Drain-Source Voltage (VDSS)20V
Gate-Source Voltage (VGSS)±12V
Continuous Drain Current (ID)2.9A @ 25°C
Pulsed Drain Current (IDM)10A (10µs pulse)
Power Dissipation (PD)1.0W @ 25°C
Gate Threshold Voltage (VGS(th))0.75V typ / 1.2V max @ 250µA
RDS(on) @ VGS=4.5V33mΩ typ / 40mΩ max
RDS(on) @ VGS=2.5V40mΩ typ / 60mΩ max
Total Gate Charge (QG)4.0nC @ VGS=4.5V
Input Capacitance (CISS)300pF @ VDS=10V
Reverse Transfer Capacitance (CRSS)~80pF
Turn-on Delay / Rise Time10ns / 50ns
Body Diode VF0.75V typ @ 2.9A
Operating Temperature-55°C to +150°C
ManufacturerWuxi NCE Power Semiconductor

RDS(on) at each gate drive level. At 33mΩ typical at 4.5V, the NCE2302 competes with MOSFETs rated for double the current. The key trade-off: 20V VDS max means this is strictly for 5V-and-below designs.

VGS = 2.5V
40mΩ typ
60mΩ max
VGS = 4.5V
33mΩ typ
40mΩ max

Bar width = typical RDS(on) relative to 40mΩ. The gap between typical and max is narrow — this is a mature, well-characterized part with tight process control.

Why the NCE2302 punches above its weight class. The 4.0nC gate charge and 300pF input capacitance mean this part switches with almost no drive current. Compare to similar MOSFETs in its class — the NCE2302 needs half the gate drive energy of a typical 20V SOT-23 MOSFET.

Gate Charge QG (lower = faster switching)
NCE2302
4.0nC
NCE3400
10nC
AO3400A
9.5nC
Typical 20V FET
8.5nC
Input Capacitance CISS (lower = easier to drive)
NCE2302
300pF
NCE3400
825pF
AO3400A
800pF
Pinout (SOT-23, Top View)
SOT-23 NCE2302 N-Ch G Pin 1 S Pin 2 D Pin 3
Gate Drive Compatibility
3.3V Logic
Fully enhanced — VGS=3.3V > VGS(th)=0.75V
5V Logic
Best performance — RDS(on)=33mΩ typ
1.8V Logic
Marginal — VGS(th) max=1.2V, use a level shifter

The NCE2302 has one of the lowest VGS(th) in its class (0.75V typ). 3.3V GPIOs drive it with margin to spare. The ±12V VGS max is the same constraint as the rest of the NCE family: don't drive the gate from 12V without a clamp.

When Should You Use (and NOT Use) the NCE2302?

Should I use NCE2302? VDS <= 20V? (5V or lower supply rail) YES NO Use NCE3400 (30V) ID <= 2A continuous? (thermal OK in SOT-23) YES NO Use NCE3400 (5.8A) Need low gate charge for fast switching? YES NO NCE2302 still fine NCE2302 Fits Decision tree — start at top, answer each question, follow the arrows

✅ Use NCE2302 when:

  • Switching up to 2A from a 5V or 3.3V rail. At 2A and 40mΩ (worst case, 4.5V drive), the NCE2302 dissipates 160mW — well within the 1W package limit. At 2.9A, dissipation rises to 336mW, still safe but warm. This is a 2A part in practice, and the datasheet's 2.9A is achievable with good PCB copper.
  • High-frequency PWM above 200kHz. With 4.0nC gate charge, a 10mA gate driver switches the NCE2302 in 400ns. That's practical for 500kHz+ PWM. The 300pF CISS means even a weak MCU GPIO (5mA drive) can switch this part at 100kHz without a dedicated gate driver.
  • Single-cell Li-Ion protection (sub-3A). For 1S packs below 3A, the NCE2302 is adequate and costs less than the NCE3400. The 20V VDS rating covers any single-cell scenario.
  • LED drivers, small motor drivers, peripheral power gating. Any application under 2A where board space, cost, or switching speed matter. The NCE2302 is the cheapest NCE SOT-23 MOSFET that still delivers logic-level drive and reasonable RDS(on).

❌ Don't use NCE2302 when:

  • VDS can exceed 20V. 20V is the absolute maximum — there's no margin for ringing or transients. For anything above a 5V rail, step up to NCE3400 (30V) or 2N7002-TP (60V, but only 115mA).
  • Load current exceeds 2A continuous. Above 2A, the NCE3400 (5.8A rating, 24mΩ) is the safer choice. The NCE2302 will survive 2.9A, but thermal margin shrinks to near zero on a typical 2-layer board.
  • You need the lowest possible RDS(on). 33mΩ is good, but the NCE3400 delivers 24mΩ (27% lower) for a similar price. In battery-powered designs where every millivolt of drop counts, pay the extra cent for the NCE3400.
  • Gate drive is 1.8V. VGS(th) max is 1.2V, so 1.8V might barely turn it on, but RDS(on) at 1.8V is unspecified and likely very high. Use BSS138 or add a level shifter.

What Are the Alternatives to NCE2302?

ModelTypeKey DifferenceBest For
NCE3400N-Ch Trench MOSFET30V/5.8A, RDS(on) 24mΩ, QG 10nC, SOT-23Step-up: higher voltage, higher current
SI2302DSN-Ch Trench MOSFET20V/2.8A, RDS(on) ~45mΩ, QG ~5nCNear-equivalent, slightly worse specs
BSS138N-Ch MOSFET50V/200mA, RDS(on) ~3.5Ω, ±20V VGSHigher voltage, signal-level only
2N7002-TPN-Ch MOSFET60V/115mA, RDS(on) ~5ΩHV switching, very low current
NCE2305P-Ch Trench MOSFET-20V/-4.1A, RDS(on) 52mΩ, SOT-23P-channel complement for high-side switching

The NCE SOT-23 family: three parts, three jobs.

RDS(on) @ 4.5V VGS
NCE2302
33mΩ
NCE3400
24mΩ
NCE2305(P)
52mΩ
Gate Charge QG (lower = faster)
NCE2302
4.0nC
NCE3400
10nC
NCE2305(P)
7.8nC

The NCE2302 is the speed king of the family — less than half the gate charge of the NCE3400. For high-frequency PWM applications, this is the one you want. The trade-off: lower voltage rating and higher RDS(on).

What Are the Typical Applications of NCE2302?

Low-Side LED Driver / PWM Dimming
VLED = 5V LED LED NCE2302 N-Ch GND G (PWM) Rg 10Ω
Why It Works

The NCE2302's 4.0nC gate charge makes it ideal for PWM dimming at several kHz. A 3.3V MCU GPIO delivering 5mA charges the gate in under 1µs — no gate driver IC needed. At 1A LED current with 40mΩ RDS(on), the FET drops just 40mV, keeping the LED current sense resistor the dominant voltage drop in the path.

For small DC motor PWM (sub-2A), the NCE2302 is the go-to low-side switch. At 20kHz PWM — typical for motor control — the rise/fall times are under 100ns. Switching loss is negligible compared to conduction loss at this frequency. Add a flyback diode across the motor and you have a complete motor driver in four components.

Battery Protection (1S, sub-3A). Same topology as NCE3400 but scaled down. The NCE2302 sits between BAT− and P−. At 2A load and 40mΩ, voltage drop is 80mV. The 20V VDS rating is sufficient for single-cell. If you're building a 1S protection board for a sub-$10 product, the NCE2302 saves a fraction of a cent per unit over the NCE3400 — and at volume, fractions of a cent add up.

Why Buy NCE2302 from ICMASS?

Full batch traceability. We verify date codes and lot numbers against NCE Power factory records. The NCE2302's 20V VDS rating makes it vulnerable to ESD and overvoltage damage during handling — we test incoming lots for gate leakage and VGS(th) shift before they enter inventory.

NCE SOT-23 family in one shipment. The NCE2302 is usually one of several MOSFETs on a BOM — alongside the NCE3400 for higher-current paths and the NCE2305 for high-side switching. We stock all three. One order, one shipment, one invoice.

Shenzhen stock, same-day dispatch before 15:00 CST. DHL/FedEx to North America and Europe in 5–10 days. Contact us for current pricing on your quantity — volume pricing typically ranges from $0.015–$0.04/unit depending on order size.

Frequently Asked Questions About NCE2302

Q1: NCE2302 vs NCE3400 — when do I pay the extra cent?

A: Pay it when you need >20V, >2A, or the lowest RDS(on). The NCE3400 gives you 30V VDS (vs 20V), 5.8A (vs 2.9A), and 24mΩ (vs 33mΩ). For 5V/2A designs, the NCE2302 is adequate and cheaper. For anything that might ever see a voltage transient above 20V, or any current above 2A continuous, the NCE3400's extra margin is worth the few cents. If you're unsure, default to the NCE3400 — the BOM cost difference is smaller than the cost of a field failure.

Q2: Can the NCE2302 really switch at 500kHz?

A: Yes, and this is where it shines. With 4.0nC gate charge and 300pF input capacitance, a 10mA gate driver charges the gate in ~400ns. At 500kHz (2µs period), turn-on and turn-off transitions occupy about 40% of the period — you'll see switching loss, but it's manageable with good layout. Compare to the NCE3400 (10nC): at 500kHz, switching loss dominates and the part runs hot. If you're pushing PWM above 200kHz, the NCE2302 is the best choice in the NCE SOT-23 lineup.

Q3: How much current can the NCE2302 really handle?

A: 2A comfortably, 2.9A with good thermal design. At 2A, worst-case RDS(on) of 60mΩ (at 2.5V drive) gives 240mW — about 30°C rise above ambient with typical SOT-23 PCB copper. At 2.9A, worst-case dissipation jumps to 500mW — about 63°C rise. The part will survive but your PCB won't love it. For anything above 2A continuous, the NCE3400 is the safer bet.

Q4: Is the NCE2302 avalanche-rated?

A: The standard datasheet does not specify EAS. The 20V VDS rating leaves little headroom for inductive kickback anyway. If your application switches inductive loads, add external clamping or choose an avalanche-rated part.

Q5: Why does the NCE2302 have such low gate charge?

A: Smaller die area. The NCE2302 is rated for 2.9A — about half the NCE3400's 5.8A. The silicon die is physically smaller, which means less gate capacitance. The 20V rating also allows a thinner gate oxide than a 30V part. Smaller die + lower voltage rating = lower QG. It's not magic, it's physics — and it's the reason this part is so good at high-frequency switching.

Q6: Can I use the NCE2302 in a 2S (7.4V) Li-Ion pack?

A: No — 7.4V nominal means 8.4V fully charged, and transients can push past 10V. While 10V is still under the 20V VDS rating, a 2S pack with charger transients and load dump can easily exceed 20V for microseconds. For 2S and above, use the NCE3400 (30V) or a dedicated battery protection IC. The NCE2302 is strictly for single-cell and 5V-rail applications.

Q7: NCE2302 vs SI2302DS — any reason to pick the SI part?

A: Only if it's already in your BOM or significantly cheaper. Spec-wise, the NCE2302 has lower RDS(on) (33mΩ vs ~45mΩ), lower gate charge (4.0nC vs ~5nC), and nearly identical voltage/current ratings. The NCE2302 is the objectively better part. The SI2302DS is ubiquitous and well-characterized, which matters in some regulated industries, but for new designs there's no technical reason to choose it over the NCE2302.

Q8: Does this part need a gate resistor for EMI?

A: Yes — but a small one. With only 300pF input capacitance, the NCE2302 turns on extremely fast even with a weak gate driver. That sharp edge radiates. A 10–47Ω series gate resistor slows the edge just enough to pass EMI without noticeably impacting efficiency below 300kHz. At 500kHz+, keep it at 10Ω or less.

Related Products

  • NCE3400 — 30V/5.8A N-Ch MOSFET, SOT-23, step-up for higher voltage/current
  • NCE2305 — -20V/-4.1A P-Ch MOSFET, SOT-23, high-side switching complement
  • SI2302DS — 20V/2.8A N-Ch MOSFET, SOT-23, near-equivalent alternative
  • BSS138 — 50V/200mA N-Ch MOSFET, signal-level HV switching
  • 2N7002-TP — 60V/115mA N-Ch MOSFET, SOT-23, highest voltage in SOT-23
Image NCE2302
Part Number NCE2302
Manufacturer NCEPower
Series
Package/Case
Packaging SOT-23
Product Status Production
FET Type Industrial grade
Technology Trench
Drain to Source Voltage (Vdss) N
Current - Continuous Drain (Id) @ 25°C 20
Drive Voltage (Max Rds On, Min Rds On) 4
Rds On (Max) @ Id, Vgs 0.9
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max) 30
Input Capacitance (Ciss) (Max) @ Vds 45
FET Feature 37
Power Dissipation (Max) 59
Operating Temperature ±12
Grade 300
Qualification 4
Mounting Type 1
Supplier Device Package
  • NCE2302
  • NCE2302 PDF
  • NCE2302 Datasheet
  • NCE2302 Specifications
  • NCE2302 Images
  • NCEPower
  • NCEPower NCE2302
  • Buy NCE2302
  • NCE2302 Price
  • NCE2302 Distributor
  • NCE2302 Supplier
  • NCE2302 Wholesale

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