You need a surface-mount power rectifier. ON Semi's catalog gives you three paths: the MURA110T3G (100V/1A ultrafast, 30ns), the MURS360BT3G (600V/3A ultrafast, 75ns), and the MBRS3200T3G (200V/3A Schottky, near-zero recovery). Same manufacturer, three different technologies — and picking the wrong one costs you either efficiency, reliability, or board space.
Here's the short version: MURA110 = low-voltage speed. MURS360 = high-voltage headroom. MBRS3200 = low-VF efficiency with a temperature catch. The rest of this page tells you when each one wins.
| Parameter | MURA110T3G | MURS360BT3G | MBRS3200T3G |
|---|---|---|---|
| Technology | Ultrafast Recovery | Ultrafast Recovery | Schottky Barrier |
| Reverse Voltage | 100V | 600V | 200V |
| Forward Current | 1A (2A peak) | 3A | 3A |
| Forward Voltage (VF) | 875mV @ 1A | 1.25V @ 3A | 840mV @ 3A |
| Recovery Time (trr) | 30ns | 75ns | ~0ns (majority-carrier) |
| Reverse Leakage @ 25°C | 2µA @ 100V | 3µA @ 600V | 1mA @ 200V |
| Leakage @ 125°C | ~50µA | ~150µA | ~50–100mA ⚠️ |
| Surge Current (IFSM) | 50A | 100A | 100A |
| VF Temperature Coefficient | Negative (↓ with heat) | Negative (↓ with heat) | Positive (↑ with heat) |
| Parallel Capability | Needs balancing resistors | Needs balancing resistors | Self-balancing (no resistors) |
| Package | SMA (DO-214AC) | SMB (DO-214AA) | SMB (DO-214AA) |
| Automotive Variant | SURA8110T3G | SURS8360BT3G | NRVBS3200NT3G |
| Package Dimensions | 4.57 × 2.92 × 2.05mm | 4.32 × 3.56 × 2.13mm | 4.32 × 3.56 × 2.13mm |
| Operating Temp | -65°C to +175°C | -65°C to +175°C | -65°C to +175°C |
These three parts represent two technologies with opposite strengths.
Ultrafast diodes (MURA110, MURS360) are P-N junction devices. They store charge during conduction that must be swept out at turn-off — that's the trr spec. The benefit: ultra-low reverse leakage (microamps). The cost: measurable switching loss at high frequency.
Schottky diodes (MBRS3200) are metal-semiconductor junction devices. No stored charge = zero recovery loss. The benefit: low VF and clean switching. The cost: reverse leakage in the milliamp range that doubles with every 20–25°C rise in junction temperature.
The decision tree is simple. Ask three questions in order:
The MURA110T3G is optimised for one thing: the fastest possible recovery at low voltage. At 30ns trr and 100V rating, it's the right call for:
Skip it if: your rail exceeds 75V DC (need more margin), you need >1A continuous, or you're above 500kHz switching frequency.
The MURS360BT3G is the high-voltage workhorse. 600V, 3A, 75ns — it covers applications the other two can't touch:
Skip it if: your rail is below 200V (the MURS320T3G gives you 25ns and 0.875V VF for less money), or if you're on a 48V rail at moderate temperature (the MBRS3200 Schottky is more efficient).
The MBRS3200T3G is the efficiency specialist. 840mV VF and zero recovery give you the lowest conduction and switching loss of the three — with an important temperature constraint:
Skip it if: ambient exceeds 85°C (leakage runs away), rail exceeds 150V (too close to the 200V limit), or you're rectifying line-voltage AC (use MURS360).
| Part | 1–99 units | 1,000+ | Reel Qty | Stock Level |
|---|---|---|---|---|
| MURA110T3G | $0.06–$0.12 | $0.03–$0.06 | 5,000 | 20,000 |
| MURS360BT3G | $0.10–$0.18 | $0.05–$0.09 | 2,500 | 20,000 |
| MBRS3200T3G | $0.10–$0.18 | $0.05–$0.10 | 2,500 | 10,000 |
Contact ICMASS for a same-day quote on any of these parts. All three are active ON Semi catalog products. We stock the full MURA, MURS, and MBRS series in SMA, SMB, and SMC packages. One shipment from Shenzhen, global DHL/FedEx delivery in 5–10 business days.
A: Usually not, and that's by design. A single rectifier family doesn't cover every position efficiently. Your PFC boost diode (400V, high frequency) needs a MURS360. Your 12V bias supply output (low voltage, low current) is better served by a MURA110. Your 48V OR-ing diode wants the MBRS3200's low VF. Using one part everywhere means you're either over-spending, under-protecting, or both.
A: Rail voltage and current. MURA110 = ≤75V DC rails, ≤1A. MURS360 = >75V DC rails, up to 3A. On a 48V rail at 1A, the MURA110 gives you faster recovery (30ns vs 75ns) in a smaller package. On a 325V DC bus, the MURA110 isn't even in the conversation — 100V rating vs 325V bus = instant failure.
A: Temperature and voltage kill Schottkys. Above 85°C ambient while blocking >100V, leakage current runs away. At 125°C junction, the MBRS3200 leaks 50–100mA at 200V — that's 10–20W of pure heat. An ultrafast at the same condition leaks 150µA (30mW). And Schottkys max out at 200V. For 230V AC rectification (~325V DC), there is no Schottky option — you need ultrafast or SiC.
A: MURA110: almost never. MURS360: maybe. MBRS3200: depends on temperature. The MURA110 at 875mW is trivial — the SMA package handles it with minimal copper. The MURS360 at 3.75W needs a 10×10mm cathode pour; at 85°C ambient, use the SMC version. The MBRS3200 at 2.5W conduction is fine — but if leakage hits 100mA at 125°C (20W), you get thermal runaway. Keep TJ below 100°C.
A: All three have AEC-Q101 variants. MURA110 → SURA8110T3G. MURS360 → SURS8360BT3G. MBRS3200 → NRVBS3200NT3G. Same silicon, same packages, full PPAP documentation. The standard parts are tested to the same AEC-Q101 standard (the datasheets show it); the variants add the formal paperwork trail.
A: MBRS3200T3G (Schottky), by a wide margin. Ultrafast diodes generate a reverse recovery current spike when they turn off — a pulse of current in the reverse direction lasting trr nanoseconds. This spike rings with PCB trace inductance and radiates. The MBRS3200T3G has no stored charge, so there's no recovery spike. If your switch-node waveform shows 50MHz+ ringing that won't snub out, try the Schottky.





