Three SOT-23 MOSFETs from NCE Power. Three different jobs. The NCE3400 is the N-channel workhorse (30V/5.8A, 24mΩ). The NCE2305 is the P-channel high-side switch (-20V/-4.1A, 52mΩ). The NCE2302 is the N-channel speed specialist (20V/2.9A, 33mΩ, 4.0nC gate charge). Pick the wrong one and you're either overpaying for specs you don't need, or fighting a topology problem that the right MOSFET would have solved. Here's how to get it right the first time.
| Parameter | NCE3400 | NCE2305 | NCE2302 |
|---|---|---|---|
| Channel Type | N-Channel | P-Channel | N-Channel |
| VDSS | 30V | -20V | 20V |
| ID (continuous) | 5.8A | -4.1A | 2.9A |
| Package | SOT-23 | SOT-23 | SOT-23 |
| RDS(on) @ 4.5V | 24mΩ typ | 52mΩ typ | 33mΩ typ |
| RDS(on) @ 2.5V | 28mΩ typ | 75mΩ typ | 40mΩ typ |
| VGS(th) | 0.9V typ | -0.7V typ | 0.75V typ |
| VGS Max | ±12V | ±12V | ±12V |
| Gate Charge (QG) | 10nC | 7.8nC | 4.0nC |
| Input Capacitance (CISS) | 825pF | 740pF | 300pF |
| Power Dissipation (PD) | 1.4W | 1.7W | 1.0W |
| Avalanche Rated | No | No | No |
| Gate Drive Polarity | High = ON | Low = ON | High = ON |
| Typical Topology | Low-side, DC-DC | High-side switch | Low-side, PWM |
| Relative Cost | $$ (mid) | $$ (mid) | $ (lowest) |
This is the first question you should ask. Not "which has better specs" — all N-channel MOSFETs have better specs than P-channel MOSFETs of the same die size. The question is: what does your circuit topology demand?
N-channel (NCE3400, NCE2302): Switch on the low side — between the load and ground. Turn on by driving the gate high. Best RDS(on) for the money. Use for DC-DC converters, motor drivers, LED drivers, battery protection (low-side). P-channel (NCE2305): Switch on the high side — between the supply rail and the load. Turn on by driving the gate low. Higher RDS(on) for the same die area, but you don't need a charge pump or bootstrap circuit. Use for load switches, reverse polarity protection, peripheral power gating.
The NCE3400's 30V VDS rating gives you design margin that the 20V parts don't have. In a 5V circuit, 20V seems like plenty of headroom — and it usually is, until a load dump, hot-plug transient, or inductor flyback pushes the drain above 20V for a microsecond. The NCE3400 gives you 10V of margin above the 20V parts. The NCE2302 and NCE2305 are perfectly safe in 5V systems with good layout; the NCE3400 is safer in anything that might see a transient.
The NCE2302's 4.0nC gate charge is less than half the NCE3400's 10nC. In a PWM application, that translates directly to lower gate drive current, faster edges, and less switching loss. See the QG bars above: the NCE2302 needs 40% of the drive energy that the NCE3400 requires for each switching cycle. At 500kHz, that's the difference between a cool-running MOSFET and one that needs a heatsink. The trade-off: the NCE2302 gives up voltage rating (20V vs 30V) and current capacity (2.9A vs 5.8A) to achieve those numbers.
All three in stock, one shipment. Most designs use at least two types of MOSFETs — N-channel for the heavy lifting, P-channel for the high-side switches. We stock the full NCE SOT-23 family plus alternatives from AO, Vishay, and ON Semiconductor. One order covers your entire MOSFET BOM.
Batch-tested for gate leakage and VGS(th) shift. NCE MOSFETs are widely sourced across Shenzhen distribution. We verify incoming lots against factory specs before they enter inventory.
Cross-reference support. Not sure which of these three fits your design? Tell us your topology, supply voltage, load current, and switching frequency. We'll tell you which MOSFET to use — and stock the alternatives if you need them.
Shenzhen stock, same-day dispatch before 15:00 CST. Contact ICMASS for current pricing on your quantity. Volume pricing typically ranges from $0.015–$0.06/unit depending on model and order size.
A: You can, but you shouldn't. A P-channel MOSFET on the low side works, but the gate drive logic is inverted (low = ON, high = OFF) and you get worse RDS(on) for the same money. If you're switching the low side, use an N-channel part. The NCE2305's entire reason to exist is high-side switching. Using it anywhere else is paying the P-channel penalty for no benefit.
A: For low-side switching, yes — it's the safest default. The NCE3400 covers 80% of SOT-23 MOSFET applications. The 30V/5.8A rating with 24mΩ RDS(on) is the best all-around spec in the NCE SOT-23 family. The two reasons not to: (1) if you need high-side switching, you want the NCE2305; (2) if you're doing 200kHz+ PWM at low current, the NCE2302 switches faster and costs less.
A: It's P-channel. This is physics, not a design flaw. In silicon, electrons (N-channel carriers) move roughly 2.5× faster than holes (P-channel carriers). To match an N-channel MOSFET's RDS(on), a P-channel part needs about 2.5× the die area — which won't fit in SOT-23. Every P-channel MOSFET in this package class has RDS(on) in the 40–80mΩ range. You're trading on-resistance for topology simplicity.
A: Yes — all three use the same SOT-23 pinout (Pin 1=Gate, Pin 2=Source, Pin 3=Drain). You can swap between them without PCB changes. But verify the gate drive polarity: N-channel and P-channel require opposite gate signals. Swapping an N-channel for a P-channel without changing the gate drive logic will leave the FET permanently on or permanently off.
A: NCE2305 if the peripheral is on the high side; NCE2302 if it's on the low side. Both have VGS(th) under 1V, so a 3.3V GPIO drives either one fully on. For high-side switching, the NCE2305 with Gate=0V gives VGS=-5V. For low-side switching, the NCE2302 with Gate=3.3V gives VGS=3.3V — past the 2.5V point where RDS(on) flattens out. The NCE3400 also works on the low side but is overkill for a 5V/100mA peripheral.
A: Technically yes for N-channel + N-channel, but not recommended. When you parallel MOSFETs with different RDS(on) and gate charge, the one with lower RDS(on) carries more current and switches slower — creating imbalance. For best results, parallel two of the same model. Never parallel an N-channel with a P-channel — they'll fight each other.





