MURA110T3G — ON Semi 1A/100V Ultrafast Rectifier, 30ns t_rr (SMA)

What Are the Technical Specifications of MURA110T3G?

Key numbers that matter: The 30ns t_rr and 875mV V_F put the MURA110T3G in the sweet spot for sub-200kHz converters running from 12–48V rails. At 100kHz, 30ns is only 0.3% of the switching period — reverse recovery loss is negligible.

The 660mV typical V_F at 150°C is the spec most designers overlook. At full load in a sealed enclosure, junction temperature hits 120–150°C quickly. The negative V_F temperature coefficient means conduction loss actually decreases as it heats up — no thermal runaway concern like you get with standard rectifiers.

When Should You Use (and NOT Use) the MURA110T3G?

✔ Use MURA110T3G when:

• 12V/24V/48V DC-DC output rectification. At 100–200kHz, the 30ns t_rr keeps switching losses minimal. Lower voltage rails don't need the 200–600V headroom of bigger MURA parts, so you get the fastest recovery in the series.
• Freewheeling diode for low-side MOSFETs. In buck converters, the freewheeling diode sees the full inductor current during off-time. At 1A average (2A peak), the MURA110's 875mV V_F and 30ns recovery are well-matched to sub-30W DC-DC stages.
• RCD snubber and clamp circuits. Fast 30ns turn-off means the diode stops conducting before the next switching cycle starts — no energy stolen from the snubber capacitor, clean clamping.
• Reverse polarity protection on DC inputs. With only 875mV drop at 1A and 50A surge capability, it survives the accidental reverse-connection inrush that kills smaller signal diodes. The SMA footprint fits in the same space as a SMB or SMC diode on many layouts.
• Automotive 12V/24V systems (use SURA8110T3G for PPAP). The 175°C T_J(max) and glass-passivated junction handle under-hood temperature cycling. Load-dump transients stay well within the 100V rating on 12V systems.

✘ Don't use MURA110T3G when:

• Rail voltage exceeds ~75V DC. At 100V rating, you need margin for ringing and transients. A 48V bus with stray inductance can ring to 80–90V at the switch node. For 48V+, step up to the MURA120T3G (200V) or MURA140T3G (400V).
• Average load current above 1.5A continuous. The 2A rating requires keeping T_L ≤ 135°C — hard to achieve on minimum pads. For sustained 2A+, use the MURA210T3G (2A rated) or the Vishay BYG22B-E3/TR (2A, 25ns, same SMA).
• Battery-powered ultra-low-V_F applications. At 875mV, the MURA110 wastes 875mW per amp. For single-cell Li-Ion (3.0–4.2V) where every millivolt counts, use a Schottky like MBRS3200T3G (200V/3A, V_F ~0.5V).
• Above 500kHz switching frequency. 30ns at 500kHz is 1.5% of the period — still manageable, but if you're pushing toward 1MHz, look at the BYG22B (25ns) or a SiC Schottky with near-zero recovery.

What Are the Alternatives to MURA110T3G?

MURA110T3G vs MURA120T3G — 100V or 200V? On a tightly-laid-out 24V rail, the MURA110's 100V rating gives 4× margin on the DC level — plenty for well-snubbed designs.

If your layout is less controlled or you're on a 48V bus, the MURA120T3G buys double the headroom for a 5ns t_rr penalty. In most sub-200kHz designs, the speed difference is invisible.

How Much Does the MURA110T3G Cost and Is It in Stock?

Contact ICMASS for a same-day quote. The MURA110T3G is an active, high-volume ON Semi catalog part. Full reel quantity is 5,000 units. Most orders ship same-day from Shenzhen. Production pricing in the ranges above depending on quantity and lead time.

What Are the Typical Applications of MURA110T3G?

DC-DC Converter Output Rectification: In a 24V-to-5V buck converter at 150kHz, the MURA110T3G serves as the catch diode. During the MOSFET off-time, inductor current flows through the diode. The 30ns recovery means the diode turns off before the MOSFET turns on again — no shoot-through, clean switching waveforms.

Flyback SMPS Output Rectifier: Sub-20W flyback supplies running from 12–48V input use the MURA110T3G on the secondary side. The 100V rating handles reflected primary voltage plus leakage spike with margin. The SMA package keeps the PCB footprint small enough for compact AC adapters and PoE PD designs.

Automotive ECU Protection: On 12V automotive rails, load-dump transients can reach 60–80V. The MURA110T3G blocks these while passing normal operating current, protecting downstream regulators and MCUs. For PPAP-tracked programs, swap to SURA8110T3G — same die, full automotive paperwork.

MOSFET Gate Drive Snubber: Excessive ringing on the gate line couples into the gate and can cause spurious turn-on. A MURA110T3G with a small series resistor from gate to source clamps negative-going ringing without loading the driver. The SMA footprint fits next to the gate resistor on tight layouts.

Relay and Solenoid Flyback Clamp: When a coil de-energises, the collapsing field generates a voltage spike that can destroy the driver transistor. A MURA110T3G across the coil routes that energy into the supply rail. At 100V/50A surge, it handles flyback pulses that would kill a 1N4148 in seconds.

Why Buy MURA110T3G from ICMASS?

Full ON Semi traceability. Every reel ships with ON Semi's original factory markings, date codes, and lot traceability. The MURA series is a common target for second-sourcing — we source from ON Semi authorized distribution so you're not getting a remarked generic rectifier with inflated speed specs.

Same-day cross-reference support. Not sure whether your design needs a MURA110T3G, MURA120T3G, or SURA8110T3G? Tell us your rail voltage, switching frequency, and average load current — we'll tell you which MURA variant fits. We stock the full series from MURA105 through MURA160, plus the automotive SURA variants.

BOM consolidation for power supply designs. Your BOM probably includes MURA rectifiers alongside MOSFETs, PWM controllers, optocouplers, and TL431 references for the same build. We stock all of them. One shipment, one invoice.

Shenzhen warehouse, global DHL/FedEx. Same-day shipping for orders before 15:00 CST. International delivery in 5–10 business days. Full reels, partial reels, and cut tape available.

Frequently Asked Questions About MURA110T3G

Q1: What's the difference between MURA110T3 and MURA110T3G?

A: The "G" suffix means Pb-free and RoHS compliant. The MURA110T3 is the older, non-RoHS version and is now obsolete. Electrically they are identical — same die, same specs. For new designs, use MURA110T3G. If you're holding MURA110T3 inventory, MURA110T3G is the direct drop-in replacement.

Q2: Can MURA110T3G handle 2A continuously?

A: Yes — if you keep the lead temperature at or below 135°C. The 2A rating depends entirely on thermal management. At 2A with 875mV V_F, the diode dissipates 1.75W. With R_θJL of 24°C/W, that's a 42°C rise from lead to junction. Use generous copper pours on the cathode pad to pull heat out of the package.

Q3: Is MURA110T3G suitable for automotive designs?

A: Electrically yes, but for PPAP documentation use SURA8110T3G. The SURA8110T3G is the same silicon in the same package with full AEC-Q101 qualification and PPAP capability. The standard MURA110T3G datasheet shows the same AEC-Q101 testing was performed, but the SURA variant provides the formal paperwork your Tier-1 will want.

Q4: How does MURA110T3G compare to a Schottky for output rectification?

A: Schottky wins on V_F; MURA110 wins at high temperature. The MURA110's V_F drops from 875mV to 660mV as it heats to 150°C — a negative temperature coefficient that prevents thermal runaway. Most Schottkys have a positive V_F tempco or a much flatter curve, so conduction loss rises with temperature. For hot-running enclosed supplies above ~85°C ambient, the MURA110 is often the better choice despite the higher room-temperature V_F.

Q5: What's the MURA1xx naming convention?

A: The last two digits are the voltage rating divided by 10. MURA110 = 100V, MURA120 = 200V, MURA140 = 400V, MURA160 = 600V. As voltage goes up, t_rr increases (30ns → 35ns → 65ns → 90ns) and V_F increases at the higher end (875mV for 110/120, 1.1V for 140, 1.5V for 160). Pick the lowest voltage rating that gives adequate margin for your rail.

Q6: Can I use MURA110T3G for 50/60Hz bridge rectification?

A: Yes, but you're paying for speed you don't need. At 50/60Hz, recovery time is irrelevant — the diode has 8.3ms to turn off. A standard-recovery SMA rectifier like the S1M (1000V/1A, V_F ~1.1V) costs less and works fine. Use the MURA110T3G only when the same BOM line also serves a high-frequency position in the design.

Q7: What PCB pad size should I use?

A: Use ON Semi's recommended pad geometry for DO-214AC. The minimum pad yields R_θJA of 216°C/W — fine for ≤0.5A average. For 1A and above, increase the cathode-side copper area significantly. The J-bend leads conduct heat primarily through the cathode lead, so expand that pad into a small copper pour. Each doubling of cathode copper area typically drops effective R_θJA by 30–40%.

Q8: Does the MURA110T3G need a snubber?

A: Not inherently — but your circuit's parasitic inductance might. The 30ns t_rr itself is fast but soft-recovery, so it doesn't generate significant RF ringing. Ringing you see on the scope is usually from PCB trace inductance resonating with the diode's junction capacitance (~10pF) and the MOSFET's C_oss. If your switch-node waveform shows >20% overshoot, add an R-C snubber across the diode rather than blaming the diode itself.

Related Products

• MURA120T3G — 200V/1A Ultrafast, same SMA, 35ns t_rr
• MURA210T3G — 100V/2A Ultrafast, same SMA, higher current rating
• SURA8110T3G — AEC-Q101 automotive variant, same silicon
• BYG22B-E3/TR — Vishay 100V/2A, 25ns, performance upgrade path
• MBRS3200T3G — ON Semi 200V/3A Schottky, lower V_F
• MURA140T3G — 400V/1A Ultrafast, for higher-voltage rails