Infineon Technologies AUIRF1404

Part No.:
AUIRF1404
Manufacturer:
Infineon Technologies
Category:
N-Channel MOSFETs
Package:
TO-220-3
Datasheet:
ICMASS.COMAUIRF1404.pdf
Description:
MOSFET N-CH 40V 160A TO220AB
Quantity:

Unit Price:$0

Ext Price:$0

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AUIRF1404 Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4mOhm @ 121A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
196 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5669 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
333W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Datasheet:
ICMASS.COMAUIRF1404.pdf
Image AUIRF1404ZSTRL AUIRF1404STRL AUIRF1404 AUIRF1404Z AUIRF1404ZL
Part Number AUIRF1404ZSTRL AUIRF1404STRL AUIRF1404 AUIRF1404Z AUIRF1404ZL
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Series HEXFET® HEXFET® HEXFET® HEXFET® HEXFET®
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging Tape & Reel (TR) Bulk Bulk Tube Tube
Product Status Last Time Buy Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc) 75A (Tc) 160A (Tc) 160A (Tc) 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 75A, 10V 4mOhm @ 95A, 10V 4mOhm @ 121A, 10V 3.7mOhm @ 75A, 10V 3.7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 200 nC @ 10 V 196 nC @ 10 V 150 nC @ 10 V 150 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4340 pF @ 25 V 7360 pF @ 25 V 5669 pF @ 25 V 4340 pF @ 25 V 4340 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 200W (Tc) 3.8W (Ta), 200W (Tc) 333W (Tc) 200W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade - - - - -
Qualification - - - - -
Mounting Type Surface Mount Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-263AB (D2PAK) D2PAK TO-220AB TO-220AB TO-262
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