The NCE30P15S is a single P-Channel power MOSFET in SOP-8: -30V/-15A with RDS(on) of 12mΩ max @ -10V and a 48nC gate charge. Pins 1–3 are Source, pin 4 is Gate, pins 5–8 are Drain — the standard SO-8 high-side arrangement shared by the whole 30P family.
This page covers the pin diagram, the specs that matter, the two circuits that use it most (high-side switching and reverse polarity protection), and the mistakes that show up in support queues.
Pin mapping at a glance: Source on 1–3, Gate on 4, Drain on 5–8. The four drain pins are paralleled inside the package — they share the die, and they're the only thermal path out.
| Pin | Name | Type | Description |
|---|---|---|---|
| 1 | S | Source | Source (ties to VIN in high-side use) |
| 2 | S | Source | Source (parallel pin) |
| 3 | S | Source | Source (parallel pin) |
| 4 | G | Gate | Gate — drive to ground to turn on (P-Channel) |
| 5 | D | Drain | Drain (to load in high-side use) |
| 6 | D | Drain | Drain (parallel pin) |
| 7 | D | Drain | Drain (parallel pin) |
| 8 | D | Drain | Drain (parallel pin) |
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDS) | -30V |
| Gate-Source Voltage (VGS) | ±20V |
| Continuous Drain Current | -15A @ 25°C |
| Pulsed Drain Current | -60A |
| RDS(on) @ -10V | 12mΩ max (8.5mΩ typ) |
| RDS(on) @ -4.5V | 15mΩ max (11.5mΩ typ) |
| VGS(th) | typ -1.5V (max -2.2V) |
| Power Dissipation | 3.1W @ 25°C |
| Gate Charge | 48nC @ -10V |
| Input Capacitance | 2800pF typ |
| Output Capacitance | 410pF typ |
| Reverse Transfer Capacitance | 280pF typ |
| Junction Temperature | -55°C to +150°C |
Specs that matter: per the NCE30P15S datasheet, RDS(on) is guaranteed at -4.5V and -10V — 5V logic turns it fully on. The 3.1W PD is the real limit: at 10A and 8.5mΩ typ the die dissipates 0.85W, leaving thermal room — but only with the drain-pin copper to move it.
Circuit 1 — high-side load switch with level shifter: Source to VIN, drain to the load, gate pulled up through 1kΩ (off). A GPIO drives the NPN, which pulls the gate to ground to enable.
The 1kΩ pull-up keeps off-time near 4µs with the 48nC gate charge — a 10kΩ version works but turns off in ~40µs.
Off-time on a 12V rail with the 48nC gate charge (Qg × R ÷ V):
But why does drive stiffness keep coming up? Because 48nC is double the 12A sibling's charge — the pull-up resistor is a design decision, not a default.
Circuit 2 — reverse polarity protection: connect source to the load and drain to the supply (deliberately "backwards"). The body diode blocks a reversed battery; once the gate is pulled negative, the channel carries the load at 12mΩ max instead of a diode's 0.4–0.6V.
The gate must reference the load-side rail — not the supply side — or the body diode re-conducts and the protection vanishes.
How do you know if your drive is strong enough? Measure the off-time — if the switch takes tens of microseconds to drop, the pull-up is too weak for this gate charge.
NCE30P15S is typically in stock at ICMASS with same-day dispatch from Shenzhen. We lot-test VGS(th) and RDS(on) at -4.5V and -10V before shipping. Contact us for current pricing and quantity pricing on the 2500-piece reel.
A: Yes — a single P-Channel die, four paralleled drain pins. They carry the -15A together and are the package's only thermal path. Solder all four to a shared copper pour; leaving one floating halves the heat path.
A: Yes — the whole 30P family shares pins 1–3 Source, 4 Gate, 5–8 Drain. Upgrades and downgrades between the three are BOM changes, not board changes. Only the gate drive must be reviewed: the 15S's 48nC wants a stiffer pull-up than the 12S's 24nC.
A: Yes — same SO-8 pinout, and a major upgrade. The SI4435DY is -8.8A at 26mΩ; the 15S is -15A at 12mΩ max. Same socket, roughly 2× the current at half the resistance. Recheck the gate drive — 48nC is more than the 4435's ~15nC, so the pull-up may need to drop.
A: Copper under the drain pins, and short wide traces to the load. The SOP-8 has no exposed tab — pins 5–8 are the thermal path. A solid pour under the package plus vias to inner layers is the difference between ~6A and ~9A of real continuous capacity.
A: It switches on, but RDS(on) is not specified below -4.5V. At -3.3V the die is partially enhanced and resistance climbs 2–3×. For a 1–2A load with headroom it works; for 5A+ add the two-component NPN level shifter.
A: The gate is not pulled to the source potential, so the channel never turns off. A GPIO reaching only 3.3V or 5V can't cut off a P-Channel on a 12V rail. Fix: NPN level shifter to pull the gate low, pull-up between gate and source to pull it high. A swapped source/drain (body diode conducting) looks identical.
A: 1kΩ for switching; 10kΩ only for loads that cycle rarely. Off-time is roughly Qg × R ÷ V: 48nC at 12V through 1kΩ is ~4µs; through 10kΩ, ~40µs. Forum threads converge on 1k–10kΩ, with the lower value whenever the load cycles.
A: Measure RDS(on) at -4.5V and -10V. A genuine part reads near 11.5mΩ typ at -4.5V. Counterfeit parts remarked from smaller dies fail this check by 2–3× while passing visual inspection — the exact reason we batch-test before shipping.





