The 2N7002 is the go-to small-signal N-channel MOSFET for low-side switching in 5V systems. You'll find it on thousands of schematics - LED drivers, level shifters, reset controllers, relay drivers. But the part has a well-known weak spot: its gate threshold voltage is too high for reliable 3.3V logic drive.
The three best replacements depend on why you're switching. If you're moving to 3.3V microcontrollers, the BSS138 is the right call - its 0.8–1.3V Vgs(th) guarantees full turn-on at 3.3V. If you need the same 60V rating but want lower RDS(on), the 2N7002CKVL (Nexperia) drops on-resistance from ~7.5Ω to ~1.1Ω. If you're pushing above 200 mA, the MMBF170 (onsemi, 500 mA) buys you current headroom in the same SOT-23 footprint.
The 2N7002 is not obsolete and won't be anytime soon. But new designs running on 3.3V rails should skip it. This guide covers every drop-in alternative, the gate-drive trap that catches engineers, and what fails when it goes wrong.
All three are N-channel enhancement-mode MOSFETs in the SOT-23 package with the same pinout (Pin 1: Gate, Pin 2: Source, Pin 3: Drain). The differences come down to gate threshold, on-resistance, and current rating - and those differences determine which one actually works in your circuit.
| Parameter | 2N7002 (Standard) | BSS138 | 2N7002CKVL (Nexperia) |
|---|---|---|---|
| Manufacturer | Multi-source (onsemi, Diodes, ROHM, etc.) | Multi-source (onsemi, Infineon, Nexperia, etc.) | Nexperia |
| Vds (max) | 60V | 50V | 60V |
| Id Continuous (max) | 115–300 mA (varies by mfr) | 220 mA | 300 mA |
| RDS(on) @ Vgs=10V | ~7.5Ω | ~0.7–3.5Ω | ~1.1Ω |
| Vgs(th) Range | 1.0–2.5V | 0.8–1.5V | 1.0–2.0V |
| RDS(on) @ Vgs=3.3V | Not guaranteed - often >>10Ω | Typically <5Ω | Typically <3Ω |
| Pd (max) | 200–350 mW | 360–430 mW | 350 mW |
| Input Capacitance (Ciss) | ~50 pF | ~27 pF | ~30 pF |
| Rise / Fall Time | ~15 ns / ~12 ns | ~9 ns / ~7 ns | ~10 ns / ~8 ns |
| Package | SOT-23 | SOT-23 | SOT-23 |
| Pinout | G-S-D (1-2-3) | G-S-D (1-2-3) | G-S-D (1-2-3) |
| ESD Protection | No (standard parts) | No (standard parts) | Yes (2kV HBM) |
| Status | Active | Active | Active |
| Price Reference | $0.01–0.04/unit | $0.02–0.06/unit | $0.03–0.08/unit |
| Part Number | Manufacturer | Vds | Id (max) | RDS(on) @ 10V | Vgs(th) | Pin-Compatible? | Status | Notes |
|---|---|---|---|---|---|---|---|---|
| BSS138 | Multi-source | 50V | 220 mA | ~1.4Ω | 0.8–1.5V | Yes - SOT-23 G-S-D | Active | Best for 3.3V logic. Widest availability. |
| 2N7002CKVL | Nexperia | 60V | 300 mA | ~1.1Ω | 1.0–2.0V | Yes - SOT-23 G-S-D | Active | Best RDS(on) in 60V class. ESD protected. |
| MMBF170 | onsemi | 60V | 500 mA | ~5Ω | 0.8–2.1V | Yes - SOT-23 G-S-D | Active | Highest current in SOT-23 60V class. |
| 2N7002LT1G | onsemi | 60V | 115 mA | ~7.5Ω | 1.0–2.5V | Yes - SOT-23 G-S-D | Active | Direct equivalent. Same specs as generic 2N7002. |
| 2N7002-7-F | Diodes Inc. | 60V | 210 mA | ~7.5Ω | 1.0–2.5V | Yes - SOT-23 G-S-D | Active | Slightly higher Id rating. Direct swap. |
| RK7002T116 | ROHM | 60V | 115 mA | ~7.5Ω | 1.0–2.5V | Yes - SOT-23 G-S-D | Active | Direct equivalent. Good Asian supply. |
| 2N7002-TP | Micro Commercial | 60V | 115 mA | ~7.5Ω | 1.0–2.5V | Yes - SOT-23 G-S-D | Active | Budget direct equivalent. |
| BS170 | onsemi / Multi-source | 60V | 500 mA | ~1.2Ω | 0.8–2.1V | No - TO-92 (through-hole) | Active | Through-hole alternative. Breadboard-ready. |
| 2N7000 | onsemi / Multi-source | 60V | 200 mA | ~1.2Ω | 0.8–2.1V | No - TO-92 (through-hole) | Active | Through-hole. Same gate drive as 2N7002. |
This is the single most common issue with the 2N7002, and it shows up repeatedly on StackExchange and EEVblog. The 2N7002 was designed in the era of 5V logic. Its gate threshold voltage (Vgs(th)) is spec'd at 1.0–2.5V - and that threshold is measured at just 250 µA of drain current. It's the voltage where the MOSFET starts to conduct, not where it's fully on.
To reach the specified RDS(on) of ~7.5Ω, the 2N7002 typically needs 4.5–5V on the gate. At 3.3V, you're operating in the linear region - the MOSFET is partially enhanced, RDS(on) can be 15–50Ω or worse, and drain current is severely limited. For a 100 mA load through 20Ω of channel resistance, that's a 2V drop across the MOSFET - your "switch" isn't switching, it's a resistor.
The fix is straightforward: if your microcontroller runs at 3.3V, use a MOSFET with guaranteed RDS(on) at Vgs=2.5V or lower. The BSS138 specifies RDS(on) at Vgs=2.5V (typically <5Ω). The AO3400A goes further - RDS(on) <50mΩ at Vgs=2.5V. If you're stuck with 2N7002s and 3.3V GPIOs, add a level-shifting stage (a 2N3904 NPN with a 10k base resistor and pull-up to 5V works as a cheap gate driver).
A quick test: put a scope on the drain while the MOSFET is supposedly "on." If you see the drain voltage sitting at 1–2V above ground instead of near zero, the gate drive is insufficient. Swap in a BSS138 and measure again - the difference is immediate.
This usually means the MOSFET failed shorted (drain-to-source). Two likely causes. First: no flyback diode across the relay coil - each turn-off event generates a voltage spike that stresses the drain-source junction. After enough cycles, the junction breaks down permanently. Second: weak gate drive causing high RDS(on) and overheating. A hot MOSFET running in the linear region degrades over time. The fix: add a 1N4148 across the coil (cathode to V+), and verify your gate voltage reaches at least 4.5V.
Gate oxide damage. The MOSFET's gate is a tiny capacitor - a few picofarads - isolated by a thin oxide layer. A static discharge during handling or a transient on the gate pin can punch through that oxide. Once damaged, the gate leaks current from the drain, pulling itself high. The MOSFET is permanently on. Prevention: use a 10k–100k gate-to-source pulldown resistor on every MOSFET gate. For production, consider the 2N7002CKVL which includes internal ESD protection.
Marginal gate drive is the usual suspect. On the bench, your 3.3V supply might be 3.35V and the ambient temperature 25°C - the 2N7002 barely works. In the field, the supply droops to 3.1V on a hot day (Vgs(th) drops with temperature), and suddenly the MOSFET isn't turning on reliably. The circuit works intermittently, the load gets partial voltage, and eventually something fails. This is why production designs should never depend on a MOSFET being "close enough" to its threshold.
Power dissipation check: Pd = Id² × RDS(on). At 200 mA with the 2N7002's worst-case RDS(on) at 3.3V gate drive (say 30Ω), that's 0.2² × 30 = 1.2W. The SOT-23 package is rated for 200–350 mW maximum. The part is burning over 3× its rated power. Either reduce the load current, increase the gate drive voltage to lower RDS(on), or switch to a MOSFET with lower on-resistance. The MMBF170 or a move to the AO3400A solves this outright.
| Parameter | Details |
|---|---|
| Best 3.3V Replacement | BSS138 (SOT-23, 50V, 220 mA, multi-source) |
| Best 60V Upgrade | 2N7002CKVL (SOT-23, 60V, 300 mA, Nexperia) |
| Best High-Current SOT-23 | MMBF170 (SOT-23, 60V, 500 mA, onsemi) |
| Condition | New, original manufacturer packaging |
| Lead Time | In stock, ship from Shenzhen |
| Packing | Tape & Reel (3,000/standard reel for SOT-23) |
Contact ICMASS for current pricing on your specific quantity. We stock BSS138, 2N7002CKVL, MMBF170, and all standard 2N7002 variants with full manufacturer traceability. Volume pricing for small-signal SOT-23 MOSFETs typically ranges from $0.01–$0.08/unit depending on part number and quantity. Need help validating a gate drive design before committing to production? We can provide sample quantities and application support.
A: Yes - in most cases. Both are SOT-23 with the same G-S-D pinout. The BSS138 has a lower Vds rating (50V vs 60V), so check your drain voltage first. If your circuit runs on 48V or less, the BSS138 is a drop-in upgrade - better 3.3V gate drive, lower RDS(on), and faster switching. If you need the full 60V rating, use the 2N7002CKVL instead.
A: The 2N7002 needs 4.5–5V on the gate to reach its specified RDS(on). At 3.3V, the MOSFET operates in the linear region - partially on, with RDS(on) potentially 15–50Ω. Your load sees a voltage divider, not a switch. Use a BSS138 (specified at Vgs=2.5V) or add a level-shifting gate driver stage.
A: No - and it won't be for a long time. Multiple manufacturers (onsemi, Diodes Inc., ROHM, Micro Commercial, Nexperia) actively produce it. But for new designs running on 3.3V logic, it's the wrong part. The 2N7002 belongs in 5V systems where its gate drive requirement is comfortably met.
A: Package only. The 2N7002 is the SOT-23 surface-mount version. The 2N7000 is the TO-92 through-hole version. Electrically they are nearly identical - same 60V Vds, similar RDS(on), same gate threshold range. The 2N7000 typically handles slightly more current (200 mA vs 115 mA) due to better thermal dissipation in the larger TO-92 package.
A: For low-speed DC switching (on/off every few seconds or longer): not strictly necessary - the GPIO pin's internal resistance limits the inrush current into the gate capacitance. For PWM or fast switching: yes. A 100–220Ω gate resistor dampens the LC ringing between the gate trace inductance and gate capacitance. Without it, you can get VHF oscillations on the gate during switching edges, increasing EMI and switching losses. A 10k–100k gate-to-source pulldown resistor is always recommended - it keeps the gate from floating during MCU startup when GPIOs are high-impedance.
A: For small reed relays (10–50 mA coil current): yes, with a flyback diode across the coil. For larger mechanical relays (100–200 mA coil): check your gate drive voltage first. At 5V gate drive with a 200 mA coil through ~7.5Ω RDS(on), you'll drop 1.5V and dissipate 300 mW - at the edge of SOT-23 thermal limits. At 3.3V gate drive: don't. The higher RDS(on) will cause the MOSFET to overheat and fail. For relay driving from 3.3V, use the MMBF170 or AO3400A.
A: Missing gate-to-source pulldown resistor. During MCU power-up, GPIO pins are high-impedance (floating) until firmware configures them. A floating gate can pick up enough charge from ambient noise to partially turn on the MOSFET - your load gets brief, unintended pulses of power. A 10k–100k resistor from gate to ground prevents this. Second most common: forgetting the flyback diode when switching inductive loads.
A: For 60V-rated parts: the 2N7002CKVL (Nexperia) at ~1.1Ω. For 50V-rated parts: the BSS138 from quality manufacturers (onsemi, Infineon) at ~0.7–1.4Ω. If you can accept a lower voltage rating, the AO3400A (30V) achieves <30mΩ - two orders of magnitude lower - in the same SOT-23 footprint. Choose based on your voltage rail: above 30V → 2N7002CKVL; 30V or below → AO3400A.





